C16A50 Search Results
C16A50 Price and Stock
TTM Technologies C16A50Z4TERMINATION 16W 4GHZ 50 OHM SMD |
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C16A50Z4 | Cut Tape | 11,150 | 1 |
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C16A50Z4 | 6,589 |
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C16A50Z4 | 1,025 |
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C16A50Z4 | 2,250 | 1 |
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NIDEC Components REC16A50-201ROTARY ENCODER OPTICAL 50PPR |
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REC16A50-201 | Bulk | 20 |
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REC16A50-201 | Bulk | 20 |
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NIDEC Components REC16A50-201-CROTARY ENCODER OPTICAL 50PPR |
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REC16A50-201-C | Bulk | 20 |
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REC16A50-201-C | Bulk | 20 | 1 |
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REC16A50-201-C | Bulk | 20 |
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Nidec Copal Electronics Corporation REC16A50-201- Boxed Product (Development Kits) (Alt: REC16A50-201) |
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REC16A50-201 | Box | 111 Weeks | 20 |
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Nidec Copal Electronics Corporation REC16A50-201-C- Boxed Product (Development Kits) (Alt: REC16A50-201-C) |
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REC16A50-201-C | Box | 10 Weeks | 20 |
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C16A50 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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C16A50Z4 |
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Surface Mount Termination 16 Watts, 50 Ohm | Original |
C16A50 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Model C16A50Z4 Surface Mount Termination 16 Watts, 50Ω Description Features: • RoHS Compliant • 16 Watts • DC – 4.0 GHz • Al2O3 Ceramic • Non-Nichrome Resistive Element • Low Return Loss • 100% Tested • Small Size The C16A50Z4 is high performance Alumina Al2O3 surface mount |
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C16A50Z4 C16A50Z4 | |
C16A50Z4Contextual Info: RoHS Compliant Model C16A50Z4 Surface Mount Termination 16 Watts, 50Ω Description The C16A50Z4 is high performance Alumina Al203 surface mount termination intended as a low cost alternative to Aluminum Oxide (AlN). The termination is well suited to all cellular frequency bands such as; |
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C16A50Z4 C16A50Z4 Al203) | |
X3C26P1-30S
Abstract: RFP- C16A50Z4 v-tek 2500 C50A50Z4 RF Directional Couplers data sheet RF35 RO4003 RO4350 X3C26P1-30
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X3C26P1-30S X3C26P1-30S RF-35, RO4003 RFP- C16A50Z4 v-tek 2500 C50A50Z4 RF Directional Couplers data sheet RF35 RO4350 X3C26P1-30 | |
RF35
Abstract: RO4003 RO4350 PCB Rogers RO4003 C50A50Z4
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X3C19E2-20 X3C19E2-20S RF35 RO4003 RO4350 PCB Rogers RO4003 C50A50Z4 | |
hybrid coupler 3dB 180
Abstract: X3C09P1-03S hybrid coupler hybrid coupler 3dB 90 3DB coupler 180 3dB coupler 180 degree 3dB coupler 210F RF35 RO4003
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X3C09P1-03S X3C09P1-03S G-10ties hybrid coupler 3dB 180 hybrid coupler hybrid coupler 3dB 90 3DB coupler 180 3dB coupler 180 degree 3dB coupler 210F RF35 RO4003 | |
hybrid coupler 3dB 180
Abstract: X3C21P1-03S 180 degree 3dB coupler hybrid 180 couplers hybrid coupler X3C21P1 210F RF35 RO4003 180 Degree hybrid Xinger
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X3C21P1-03S X3C21P1-03S RF-35, hybrid coupler 3dB 180 180 degree 3dB coupler hybrid 180 couplers hybrid coupler X3C21P1 210F RF35 RO4003 180 Degree hybrid Xinger | |
hybrid coupler 3dB 180
Abstract: 210F RF35 RO4003
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X3C19P2-03S X3C19P2-03S hybrid coupler 3dB 180 210F RF35 RO4003 | |
hybrid coupler 3dB 180
Abstract: 180 degree 3dB coupler RF35 RO4003
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X3C07P1-03S X3C07P1-03S US700 RF-35 hybrid coupler 3dB 180 180 degree 3dB coupler RF35 RO4003 | |
180 Degree hybrid Xinger
Abstract: hybrid coupler 3dB 180 hybrid 180 couplers X3C21P1-03S PCB Rogers RO4003 substrate datasheet 210F RF35 RO4003
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X3C21P1-03S X3C21P1-03S RF-35 180 Degree hybrid Xinger hybrid coupler 3dB 180 hybrid 180 couplers PCB Rogers RO4003 substrate datasheet 210F RF35 RO4003 | |
hybrid coupler 3dB 180
Abstract: combiner THEORY 180 Degree hybrid Xinger 180 degree 3dB coupler hybrid coupler RF Coupler 3dB X3C19P1-03S 210F RF35 RO4003
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X3C19P1-03S X3C19P1-03S hybrid coupler 3dB 180 combiner THEORY 180 Degree hybrid Xinger 180 degree 3dB coupler hybrid coupler RF Coupler 3dB 210F RF35 RO4003 | |
Contextual Info: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power ampliier applications in the 2110 to 2170 MHz frequency band. Features |
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PTAC210802FC PTAC210802FC 80-watt H-37248-4 c21080us | |
Contextual Info: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features |
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PXAC260602FC PXAC260602FC 60-watt H-37248-4 | |
2.4ghz lnb
Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
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XC0450A-03 XC0450L-03 XC0450E-03 1F1304-3 XC0900P-03 XC0900E-03 XC0900A-03 XC0900L-03 S03B888N3 XC1400P-03 2.4ghz lnb 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter | |
RF35
Abstract: RO4003 ro4003 rogers microstrip Rogers RO4003 varactor 650 manual
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X3C07P1-03S X3C07P1-03S US700 RF-35, RF35 RO4003 ro4003 rogers microstrip Rogers RO4003 varactor 650 manual | |
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varactor 650 manual
Abstract: X3C06A4-03S variable phase shifter 100 Mhz Model 430 X3C19 180 degree 3dB coupler 180 Degree hybrid Xinger
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X3C06A4-03S X3C06A4-03S 450MHz RF-35, RO4003 varactor 650 manual variable phase shifter 100 Mhz Model 430 X3C19 180 degree 3dB coupler 180 Degree hybrid Xinger | |
3db couplers
Abstract: v-tek 210F RF35 RO4003 X3C25P1-05S
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X3C25P1-05S X3C25P1-05S 3db couplers v-tek 210F RF35 RO4003 | |
X3C21P1
Abstract: 210F RF35 RO4003 X3C21P1-05S X3C21P1-05
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X3C21P1-05S X3C21P1-05S X3C21P1 210F RF35 RO4003 X3C21P1-05 | |
Anaren rfp
Abstract: RF35 RO4003 RO4350 XC09E2-20S
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X3C09E2-20 X3C09E2-20S RF-35, RO4003 Anaren rfp RF35 RO4350 XC09E2-20S | |
hybrid coupler 3dB 180
Abstract: RF35 RO4003 RO4350
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X3C09P2-30S X3C09P2-30S RF-35, RO4003 hybrid coupler 3dB 180 RF35 RO4350 | |
Contextual Info: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path |
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PXAC201602FC PXAC201602FC 140-watt H-37248-4 10ubstances. | |
Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for |
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PXAC201202FC PXAC201202FC 120-watt H-37248-4 pxac201202fc-gr1a | |
Contextual Info: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2496 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features |
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PXAC261002FC PXAC261002FC 100-watt | |
Contextual Info: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features |
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PXAC260602FC PXAC260602FC 60-watt H-37248-4 | |
Contextual Info: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output |
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PTAB182002TC PTAB182002TC 180-watt H-49248H-4 |