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    C10 5T Search Results

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    C10 5T Price and Stock

    Microchip Technology Inc DSPIC33CK32MC105T-I-PT

    IC MCU 16BIT 32KB FLASH 48TQFP
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    DigiKey DSPIC33CK32MC105T-I-PT Digi-Reel 7,988 1
    • 1 $1.87
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    DSPIC33CK32MC105T-I-PT Reel 6,400 1,600
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    Microchip Technology Inc DSPIC33CK32MC105T-I-M4

    IC MCU 16BIT 32KB FLASH 48UQFN
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    DigiKey DSPIC33CK32MC105T-I-M4 Cut Tape 3,300 1
    • 1 $1.84
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    DSPIC33CK32MC105T-I-M4 Reel 3,300 3,300
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    DSPIC33CK32MC105T-I-M4 Digi-Reel 3,300 1
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    Samtec Inc SFC-105-T2-LM-D-A-K-TR

    CONN RCPT 10POS 0.05 GOLD SMD
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    DigiKey SFC-105-T2-LM-D-A-K-TR Digi-Reel 1,220 1
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    SFC-105-T2-LM-D-A-K-TR Cut Tape 1,220 1
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    SFC-105-T2-LM-D-A-K-TR Reel 675 675
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    Newark SFC-105-T2-LM-D-A-K-TR Cut Tape 35 1
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    Avnet Abacus SFC-105-T2-LM-D-A-K-TR 3 Weeks 1
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    Master Electronics SFC-105-T2-LM-D-A-K-TR
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    Sager SFC-105-T2-LM-D-A-K-TR 13 1
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    Samtec Inc SFC-105-T2-F-D-K-TR

    CONN RCPT 10POS 0.05 GOLD SMD
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    DigiKey SFC-105-T2-F-D-K-TR Cut Tape 691 1
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    SFC-105-T2-F-D-K-TR Digi-Reel 691 1
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    Newark SFC-105-T2-F-D-K-TR Reel 1
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    Avnet Abacus SFC-105-T2-F-D-K-TR 4 Weeks 1
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    Master Electronics SFC-105-T2-F-D-K-TR
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    Samtec Inc SFMC-105-T2-S-D-K-TR

    CONN RCPT 10POS 0.05 GOLD SMD
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    DigiKey SFMC-105-T2-S-D-K-TR Cut Tape 654 1
    • 1 $3.84
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    Newark SFMC-105-T2-S-D-K-TR Cut Tape 204 1
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    C10 5T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    71051

    Abstract: 71055 71059 EA-C10 0.18-um CMOS technology characteristics CMOS-10 RAC RAMBUS fi01 2127k CB-C10
    Text: EA-C10 2.5-Volt, 0.25-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25 µm drawn (0.18 µm L-effective) EA-C10 embedded array family offers both support for


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    PDF EA-C10 25-Micron EA-C10 A12503EU1V0DS00 71051 71055 71059 0.18-um CMOS technology characteristics CMOS-10 RAC RAMBUS fi01 2127k CB-C10

    D78 NEC

    Abstract: spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M
    Text: CB-C10 2.5-Volt, 0.25-Micron drawn CMOS Cell-Based ASIC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 µm drawn (0.18 µm L-effective) CB-C10 family incorporates ultra-high-performance cores with deep submicron process technology for high-end applications


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    PDF CB-C10 25-Micron CB-C10 A12504EU1V0DS00 D78 NEC spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M

    DV103003

    Abstract: MCRF355 200B AN725 DK-2750
    Text: AN725 Optimizing Read-Range of the 13.56 MHz Demonstration Reader Author: Youbok Lee, Ph.D Microchip Technology Inc. 3. Connect the new inductor antenna and capacitor to the demo reader board by following these steps: a) Disconnect the C31, C9, and C10 from the


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    PDF AN725 DV103003 D-81739 DV103003 MCRF355 200B AN725 DK-2750

    DV103003

    Abstract: ic 4570 datasheet TEC H bridge square loop antenna ic 8870 MCRF355 200B AN725 DK-2750 RG41
    Text: AN725 Optimizing Read-Range of the 13.56 MHz Demonstration Reader Author: Youbok Lee, Ph.D Microchip Technology Inc. 3. Connect the new inductor antenna and capacitor to the demo reader board by following these steps: a) Disconnect the C31, C9, and C10 from the


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    PDF AN725 DV103003 DV103003 ic 4570 datasheet TEC H bridge square loop antenna ic 8870 MCRF355 200B AN725 DK-2750 RG41

    K4S641632D-TL1L

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10


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    PDF 144pin) M466S0424DT0-L10, 4Mx64 4Mx16 K4S641632D-TL10, 000mil 4K/64ms 128bytes 256bytes 66MHz K4S641632D-TL1L

    diode c12

    Abstract: zener c18 hp DIODE C13 C13P zener 18 01UF 12NH 18PF 30PF LK802
    Text: RF in C6 1PF 7 2500mu Ferr Long UT34-25 1.3in C4 18PF C5 18PF 19 L2 12NH 4 C3 7.5PF R2 1.5K R1 1.5K 17 22 C1 3PF 10K pot 10K pot 2 1 General 24 HP 7.5V 18 18AWG 5turns C9 30PF 63V,47uf C10 3.6PF C8 30PF 63V,47uf Vds=28Vdc 1.6in Sheet TB 150 1 470 - 860MHz , 45W, 28V


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    PDF 2500mu UT34-25 18AWG 28Vdc 860MHz TB-150 860MHz diode c12 zener c18 hp DIODE C13 C13P zener 18 01UF 12NH 18PF 30PF LK802

    HA12216

    Abstract: HA12163 HA12216F HA12217F HA12218F HA12221F HA12222F 14,8 to 100 v 400hz Hitachi DSA00480
    Text: HA12216F/HA12221F Series Audio Signal Processor for Car Deck Decode only Dolby B type NR with PB Amp. ADE-207-254D (Z) 5th Edition Jun. 1999 Description HA12216F/HA12221F series are silicon monolithic bipolar IC providing Dolby B type noise reduction, music sensor, PB equalizer system in one chip.


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    PDF HA12216F/HA12221F ADE-207-254D HA12221F HA12216F HA12216 HA12163 HA12217F HA12218F HA12222F 14,8 to 100 v 400hz Hitachi DSA00480

    RL56

    Abstract: RL-56
    Text: Primary Regulators PQ1PF1 PQ1PF1 Primary Regulator for Switching Power Supply 50W Class • Outline Dimensions 4.5±0.2 10.2MAX φ3.2±0.1 2.8±0.2 16.4±0.7 3.6±0.2 7.4±0.2 PQ1PF1 (1.5) ¡Switching power supplies for VCRs ¡Switching power supplies for word processors


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    PDF O-220) 100kHz) RL56 RL-56

    IVC2 advanced programming guide

    Abstract: IVC2 toshiba MEP-c5 MEPUM06008 mep toshiba programming Toshiba MeP MEP toshiba MEP core TOSHIBA CONFIDENTIAL saturation instructions
    Text: Additional Manual for MeP c5+IVC2 C Compiler Additional Manual for MeP c5+IVC2 C Compiler Revision 1.9 Dec. 11, 2009 Semiconductor Company TOSHIBA CONFIDENTIAL MEPUM06008_E19G i Additional Manual for MeP c5+IVC2 C Compiler Preface This manual is prepared for the tools that support MeP(Media embedded Processor) c5 processor


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    PDF MEPUM06008 IVC2 advanced programming guide IVC2 toshiba MEP-c5 mep toshiba programming Toshiba MeP MEP toshiba MEP core TOSHIBA CONFIDENTIAL saturation instructions

    Untitled

    Abstract: No abstract text available
    Text: 64 J9 Header, DNP 1 2 3 4 5 6 L1 Demonstration Board – EPC9102 Schematic VIN VIN_FILT 1 Q19 GPUL J1 Q21 EPC2001 EPC2001 GPUR C3, C6, C9 Rev. 1.0 C39, C42 A 2.2uF DNP PRYSWB T2 PRYSWA A 5T ER18 R6 10 D9 BAT41 VIN_FILT J4 5 5 4 2 C36 0.1U EPC2001 1 GND D2


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    PDF EPC9102 EPC2001 BAT41 LP2985 LM5113

    GRM21BB31

    Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2
    Text: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


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    PDF NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ WS260 HS350 GRM21BB31 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 4.7n2

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


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    PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


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    PDF NE5550234 R09DS0039EJ0300 NE5550234-AZ HS350 R09DS0039EJ0300 NE5550234 Panasonic R1766

    ne5550

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm


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    PDF NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550

    D15CR22

    Abstract: Cutler-Hammer CE15SN3 c316fna3 D15CR40 C306DN3 westinghouse contactor C320TP1 V201KRCJZ1 westinghouse switchgear D15CR31
    Text: Switchgear and Control Table Of Contents Freedom Contactors and Accessories 4kW to 160kW . . . . . . . . . . . . . . . . . . . . . . . . .216-219 Heavy Current Contactors (240kW to 710kW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220


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    PDF 160kW) 240kW 710kW) E22mm D15CR22 Cutler-Hammer CE15SN3 c316fna3 D15CR40 C306DN3 westinghouse contactor C320TP1 V201KRCJZ1 westinghouse switchgear D15CR31

    11Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


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    PDF MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4

    LQW18AN4R7NG00

    Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
    Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0


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    PDF NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01

    9601 TO 220

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1) 9601 TO 220

    ATC100B471JT200XT

    Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


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    PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


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    PDF MRFE6VS25N MRFE6VS25NR1 25cale

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


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    PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    D78 NEC

    Abstract: 986M
    Text: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­


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    PDF CB-C10 CB-C10family D78 NEC 986M

    Untitled

    Abstract: No abstract text available
    Text: V23818-C10-V10 Small Form Factor Multim ode 850 nm LED Ethernet/10BASE-FL/4M-16M Token Ring 1x5 Transceiver w ith VF-45 Connector D im e n s io n s in m m in c h e s C-J (• /") o n<5T^> 2 _ O ^ O m s * g G 5 z l o p n i c ® (12.7) .499 Q oN3 < > wS


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    PDF V23818-C10-V10 Ethernet/10BASE-FL/4M-16M VF-45â RJ-45 VF-45 10BASE-FL/4M-16M

    RAC RAMBUS

    Abstract: ha 1452 EA-C10
    Text: IV IF C “ E A -C 10 2 .5 -V o lt, 0 .2 5 -M ic ro n d ra w n C M O S E m b e d d e d A rra y NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25|nm drawn (0.18 jxm L-effective) EA-C10 embedded array family offers both support for


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    PDF EA-C10 b42752S RAC RAMBUS ha 1452