C05S Search Results

Contextual Info: t InNET TECH N O LO G IES T0466S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TD+)—(TD—) : (TX +)-C TX -) 1 : 1 ± 3% (RD +)—(RD—) : (RX+)—(RX—) 1 : 1 ± 3% INDUCTANCE: (TD+)—(TD—) 350uH MIN. O 0.1V, 100KHz,

Contextual Info: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )

diode in58

Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Contextual Info: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors

PHP36

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,

ufnf320

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.8 O hm FEATURES UFNF322 UFNF323 DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

bu 517

Abstract: NDS352P
Contextual Info: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

Contextual Info: t InNET TECHNOLOGIES T0468S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TXIN+)—(CTIN)—(TXIN—) : (TXO+)-(CTO)-CTXO-) 1.25CT : 1CT ± 3% (RXO+)—(RXO—) : (RXIN+)—(RXIN—) 1 : 1 ± 3% R X 1+<D_i^rH|if— INDUCTANCE:

BUK456

Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

C02S

Abstract: c28s
Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING P _ C _ _ S_ _N REV. ECO. NO DESCRIPTION DATE BY A 861 INITIAL RELEASE 12/14/2005 HT B 1143 ADD ALL TERMINATION TYPES 9/14/2006 MV F F TERMINATION TYPE TERMINATION TYPE NUMBER OF POSITIONS PER ROW HEAD DIMENSION

74AC05

Abstract: 74AC05SC AC05 M14A
Contextual Info: A I R C H I L D Revised D ecem ber 1999 S E M I C O N D U C T O R TM 74AC05 Hex Inverter with Open Drain Outputs General Description Features The A C 05 contains six inverters. • O utputs sink 24 mA ■ O pen drain fo r w ired NO R function ■ R adiation tolerant FACT process

ADI1364

Contextual Info: — d! MOTOROLA - % Order this data sheet by VNIOLM/D SEMICONDUCTOR TECHNICAL DATA a Advance v~loLM /formation Small-Signal L Field Effect . . . are designed for high voltage, high speed switching applications such as line drivers, relay drivers. CMOS logic, microprocessor or TTL-to-high voltage inlterface and

093.216

Abstract: 2sk2974 093.941 transistor 2sk2974
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB

vectron C0-257B27

Abstract: vectron co-257 CO-257 CO-566 co257 vectron 257 C0-257f CO-08 C0-253B57 C0-257B57
Contextual Info: TCXOs to 140 MHz Model CO-257 uses surface mount construction on a printed circuit board housed in a solder sealed FEATURES: • metal can. This model includes discrete thermistors Miniature Highperformance Series and resistors in the temperature compensation

Contextual Info: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S

Contextual Info: Back to FETs iZiA Q T NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S

C02S

Abstract: c28s c14s C04S C33S
Contextual Info: 8 7 4 5 6 1 2 3 P _ C _ _ S_ _N REVISIONS TERMINATION TYPE F NUMBER OF POSITIONS PER ROW TERMINATION CODE BA BB BC BD BE BF BG LEAD FREE GA GB GC GD D DA .140 3.56 B A .050 1.27 A B .140 3.56 HEAD DIMENSION .100 2.54 A .100 2.54 TYP. P _C _ _S _ _ N FITS RIGHT ANGLE BEND

BUK637-500B

Contextual Info: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: CATALOG MI CRO SWI T CH 2EX1 S W IT C H -E N C L O S E D » !iV.- CK Of MlOHdHtllVHOKTWÎll HGULTOR CQWHT j j j j j j j L IS T IN G FEO. MF R. CODE 91929 MTS. HOLE FOR .280 DIA. FLAT HEAD SCREW.- 4 HOLE FOR *10 FLAT SCREW. 6.0 - ± .0 1 0 .2 6 5 -

k554

Abstract: kiv 499 BUK554-200A BUK554-200B
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

B4t diode surface mount

Abstract: C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3
Contextual Info: J u ly 1 9 9 6 N ational < ß Semiconductor" NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode po w e r fie ld effect tran sisto rs are produced using Nationals proprietary, high cell density, DMOS

TRACTION MOTOR GE 763

Abstract: TRACTION MOTOR GE 764 SA01-FE-3092-3 FLOW ELEMENT PDE2669TCUK 3EV290V20 VGd15 parker Bus Bar torque value table for metric bolts
Contextual Info: aerospace climate control electromechanical filtration fluid & gas handling hydraulics pneumatics process control sealing & shielding Parker Pneumatic A complete range of pneumatic system components Catalogue PDE2600PNUK March 2014 PDE2600PNUK Parker Pneumatic

Contextual Info: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package FEATURES • • • • • • Isolated High Density Package High Current

Contextual Info: DATA SHEET NEC M O S FIELD EFFECT TRANSISTOR 2SJ199 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ199, P-channel vertical ty p e MOS FE T, is a sw itching device w h ich can be driven d ire c tly by th e o u tp u t o f ICs having a 5 V pow er source. As the M OS F E T has lo w on-state resistance and excellen t s w itc h ­