C 3202 TRANSISTOR Search Results

Contextual Info: 1814-3202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325ö V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SDA 3202

Abstract: sda 3202 prescaler SDA3202 sda 3203 marking adr marking code n14 Q67000-Y904 V4 MARKING
Contextual Info: SIE M E N S SDA 3202 1.3 GHz PLL with l*C Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Message Transmission Via l2C Bus • 4 Software-Controlled Outputs • Prescaler Output Frequency is Free from Interference Radiation Pin Configuration

2sa1270

Abstract: 2SC3202 Low Power Amplifiers 500mW 5v transistor
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3202 ( APPLICATIONS *) • Low F r e q u e n c y , L ow P o w e r Amplifiers ■ G e n e ra l- d riv e r S t a g e Amplifiers ■ General p u r p o s e S w itching A pplications • Excellent hFE v s .

sda 3203

Abstract: Tuner ADR SCL SDA SDA 3202 sda 3202 prescaler N6 marking code 27110 SDA3202 SDA3203 3202 flow switch V18 marking
Contextual Info: SIEMENS SDA 3202 1.3 GHz PLL with l2C Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Message Transmission Via l2C Bus • 4 Software-Controlled Outputs • Prescaler Output Frequency is Free from Interference Radiation Pin Configuration

ZTX558

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATU RES * 400 V o lt V CE0 * 2 0 0 m A c o n tin u o u s c u rre n t * P ,o t= 1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R

TRANSISTOR C 3205

Abstract: data sw 3205 vent-captor Weber Sensors 320203 3205 transistor C 3205 curent sensor industrial air conditioning diagrams FLOW captor
Contextual Info: weber Engineered Solutions copter vent-captor Type 3202.- & Type 3205. The vent-captor type 3 2 0 2 .- is a solid-state tlow-m onitor for gaseous media in industrial applications. Being totally encapsulated in epoxy resin with no moving parts, this small,

OMA120

Abstract: FZT605 FZT604 FZT705 ARAA 14ge
Contextual Info: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO -400 V

transistor BD 522

Abstract: A 798 transistor bd801 Bd798
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor "Motorola Preferred Dtvlo« 8 AMPERE POWER TRANSISTORS NPN 8ILIC0N 100 VOLTS 05 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM FZT604 FZT605 POWER DARLINGTON TRANSISTORS ISSUE 3 - OCTOBER 1995_ FEA T U R E S * Guaranteed hFE S pecified up to 2 A * Fast S w itching P AR TM AR KIN G DETAIL - DEVICE T YPE IN FU LL CO M PLEM EN TARY TYPES -

ztx558

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATURES * 400 V olt VCE0 * 200m A continuous current * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

2N4211

Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

500mW 5v transistor

Abstract: 2SC3202 Low Power Amplifiers
Contextual Info: SILICON PHP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SM27Q APPLICATIONS • Low F re q u e n c y , L o w P o w e r A m p l if i e r s ■ G e n e r a l - d r i v e r S t a g e A m p l if i e r s • G e r\e ra \ P u r p o s e S w i t c h i n g A p p U c a tio n s

2N3204

Abstract: 2N3203 SDT3775 2N3202 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors
Contextual Info: SOLITRON DEVICES INC E ' .i tï 8 3 6 8602 SOLITRON DEVICES DE I flHbñbDE OODOTBT O D 61C 0 0 9 3 9 INC POWER TRANSISTORS 2N3202 2N3203 2N3204 r- i's-i'7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES PLANAR CONSTRUCTION LOW SATURATION VOLTAGES

HD6473214P16

Abstract: HD6473217TF16 BC2 373 Hitachi DSA0044
Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

Hitachi DSA00771

Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

block diagram of mri machine

Abstract: HD6473214P16 STATES10
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi DSA0087

Abstract: HD6473217C16 HD6433202 12P10 HD6473217F16 HD6473217TF16
Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 8/12/97 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

ZTX558

Abstract: medium power high voltage transistor DSA003769
Contextual Info: ZTX558 TYPICAL CHARACTERISTICS VCE sat - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 0.4 1.6 100 0.4 0.2 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps)

Hitachi DSA0057

Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 02/07/96 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

mitsubishi H96

Abstract: HD6473214F16 HD6473217P16
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor 3205 equivalent

Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
Contextual Info: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar

transistor BD 522

Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi