C 2570 TRANSISTOR Search Results

capacitor 2D

Abstract: AN18 LX1671 Si4842DY
Contextual Info: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2d, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

12 volt 200 Amp PWM

Abstract: AN18 LX1671 Si4842DY three phase rectifier pwm
Contextual Info: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2c, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1671

AN19

Abstract: LX1671 LX1672 Si4842DY
Contextual Info: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1672

LX1671

Abstract: LX1673 Si4842DY fet cross reference 5a2 zener diode
Contextual Info: LX1673 PRODUCT DESIGN GUIDE AN20 LX1673 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1673

5a2 zener diode

Abstract: AN19 LX1671 LX1672 Si4842DY
Contextual Info: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

high power fet audio amplifier schematic

Abstract: 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd
Contextual Info: LXE1711-100 EVALUATION BOARD USER GUIDE LXE1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.3, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Calculator Keypad and LCD

Abstract: CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23
Contextual Info: AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2000 Rev. 1.0, 2002-12-30 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

boost converter application note

Abstract: TDS3034B AN22 AN-22 LX1741 LX1742 TCP202 LX7142
Contextual Info: LX1741/LX1742 BOOST CONVERTER APPLICATION NOTE LX1741 / LX1742 BOOST CONVERTER DESIGN HINT AN-22 Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2002 Rev. 1.0, 2002-12-03 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

12 volt audio amplifier class D schematic

Abstract: high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener IRF5305 smd transistor p3 vr1 100k lin
Contextual Info: LXE1711-100 EVALUATION BOARD USER GUIDE Not Recommended For New Design LX1711-100 AUDIOMAX EVALUATION KIT USER’S GUIDE I N T E G R A T E D Copyright 2000 Rev. 0.4, 2002-01-25 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

JESD79

Abstract: AN-17 LX1671 LX1672 LX1672-03CLQ LX1673 Si4842DY PC133-SDRAM MCR10F2003
Contextual Info: AN-17 DDR SDRAM Memory Termination AN-17 USING THE LX1672 AND LX1673 FOR DDR SDRAM MEMORY TERMINATION I N T E G R A T E D Copyright 2002 Revision 1.2a, 7/17/2002 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

MOSFET J162

Abstract: CW12010T0050G
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies

GSC356-HYB2500

Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias

adl5324

Abstract: 869MHz
Contextual Info: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias

Contextual Info: PTFC261402FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620

ADL5324

Abstract: 128777 ADL5324ARKZ-R7 GRM155 capacitor 42EVALUATION GRM615COG
Contextual Info: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias

2N3773

Abstract: 2N3773 NPN Transistor 2N3773 transistor 2n3773h 150WATT
Contextual Info: 2N3773 NPN Silicon Power Transistor. 16Amp - 140V - 150Watt. High. 1 of 1 Home Part Number: 2N3773 Online Store 2N3773 Diodes NPN Silic o n Po w er Trans is t o r. 1 6 Am p - 1 4 0 V - 1 5 0 Watt . High

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Tkansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR

j821

Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

j377

Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies