HSR3 Search Results

HSR312L

Abstract: HSR412 HSR312 HSR312S HSR312SR2 HSR412L A330N
Contextual Info: HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers tm Features Description • 4,000 VRMS Isolation The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are housed in a 6-pin dual-in-line

A114

Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications

HSR412

Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L PACKAGE SCHEMATIC ANODE 1 6 DRAIN CATHODE 2 6 6 5 N/C 3 4 DRAIN 1 1 DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector

A114

Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Contextual Info: Freescale Semiconductor Technical Data MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications

hsr360

Abstract: HSR3100 hSR320
Contextual Info: HI-SINCERITY Spec. No. : HL200709 Issued Date : 2007.04.01 Revised Date : 2009.03.24 Page No. : 1/3 MICROELECTRONICS CORP. HSR320 thru HSR3100 Schottky Barrier Rectifiers Reverse Voltage 20 to 100V, Forward Current 3A Features • Low Forward Voltage Drop

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

HSR412

Abstract: diode cathode marking code 7-7-7-7 diode marking code 7-7-7-7 series connection of mosfet HSR312 HSR312L HSR312S HSR312SR2 HSR412L
Contextual Info: HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers Features Description • 4,000 VRMS Isolation The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are housed in a 6-pin dual-in-line

series connection of mosfet

Abstract: HSR412 HSR312 HSR312L HSR412L 4000VACrms
Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L PACKAGE SCHEMATIC ANODE 1 6 DRAIN CATHODE 2 6 6 5 N/C 3 4 DRAIN 1 1 DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector

HSR412

Contextual Info: HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers Features Description • 4,000 VRMS Isolation The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are housed in a 6-pin dual-in-line

fairchild relay

Abstract: HSR412 fairchild relay datasheet HSR312 series connection of mosfet HSR312L HSR312S HSR312SR2 HSR412L marking code 749 fairchild
Contextual Info: HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers Features Description • 4,000 VRMS Isolation The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are housed in a 6-pin dual-in-line

HSR412

Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are

A114

Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9160HR3 HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

"Solid State Relays"

Abstract: HSR312L AC 560 HSR312 HSR412L equivalent SENSING HSR412 HSR412L
Contextual Info: Optoelectronics Products Optically Coupled Solid State Relays Part Number IF ON Max (mA) IF (OFF) Max (mA) VOPR (VDC or VAC(PK) Max IL Max (mA) RON Max (Ω) ILMT Max (mA) VISO ACRMS (V) 1 minute DC Threshold Sensing Input HSR312 2 0.4 250 190 320 10 3

HSR412

Abstract: series connection of mosfet HSR312 HSR312L HSR412L photovoltaic A190N
Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are

OF86

Abstract: HSR412
Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L PACKAGE SCHEMATIC ANODE 1 6 DRAIN CATHODE 2 6 6 5 N/C 3 4 DRAIN 1 1 DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector

A114

Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 ALT101
Contextual Info: Freescale Semiconductor Technical Data MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9160HR3 HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications

series connection of mosfet

Abstract: HSR312 HSR412 HSR412L equivalent HSR312L HSR412L fairchild relay
Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L PACKAGE SCHEMATIC ANODE 1 6 DRAIN CATHODE 2 6 6 5 N/C 3 4 DRAIN 1 1 DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 HSR3 Designed for GSM and GSM EDGE base station applications with

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

IrL 1540 N

Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

W89K

Contextual Info: Preliminary W90210F Winbond Electronics Corp. W90210F PA-RISC Embedded Controller Revision 1.2 -1- Publication Release Date:7/18/97 The above information is the exclusive intellectual property of Winbond Electronics Corp. and shall not be disclosed, distributed or reproduced without perm ission from Winbond

MCR50V107M8X11

Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 HSR3 Designed for CDMA base station applications with frequencies from 1930 to

J294

Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 HSR3 Designed for CDMA base station applications with frequencies from 1930 to