C 1971 TRANSISTOR Search Results

Contextual Info: Application of the SN74141N I.C. to Driving Multidecade Display Tubes A pplication Report B110 Texas Instruments Limited • Manton Lane • Bedford • Phone 0234 67466 • Telex 82178 C opyright 1971 by Texas Instruments Lim ited. A ll Rights Reserved. This publication,

T1P127

Abstract: T1P-127 TIP12Q
Contextual Info: TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS Copyrlgm C 1997, Pow er Innovations Limited, U K_ D E C E M B E R 1971 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with TIPI 25, T1P126 end T1P127 • 65 W at 25°C Case Temperature

2N4862

Abstract: PG1010 API Electronics transistor 1012 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006
Contextual Info: :a "p I ELEC T R O N IC S IN C : 13 . / ,-Í3A00 75t DE~J QD43Scì2 0G0D07S 1 ^ - fa - INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN * 3 n “O n m o v P I R G O E L E C T R o n ic s iñc. ; Z ^ rJ

transistor 2N 2222 h 331

Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
Contextual Info: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi

2N1050A

Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
Contextual Info: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A

2SC1971

Abstract: transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor 2sc1971 application note NJ100 33MF RF POWER TRANSISTOR transistor 6w N50q
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 1971 is a silicon N PN epitaxial planar ty p e transistor designed Dimensions in mm fo r R F pow er am plifiers on V H F band m obile radio applications.

API Electronics

Abstract: PG1024 DD0007 PG1018 PG1019 PG1020 PG1021 PG1022 PG1023 PG1035
Contextual Info: A P I .».3 * 0077 / E L E C T R O N I C S I NC ri m T| D 0 4 3 S c12 0 D 0 D 0 7 ? S ; I* INTERIM BULLETIN S ubject to Revision W ithout Notice -Ju ly 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1018 thru PG1035, 2 A M P NPN SILICO N PLANAR POWER TRANSISTORS

TRANSISTOR AH-10

Abstract: pgl203 PG1200 PG1201 PG1202 PG1203 PG1204 PG1205 PG1206 PG1207
Contextual Info: A P I ELECTRONICS INC 13 F T J d G 4 3 S cì2 DOOOOTl □ | '~33r 0 ^ _ INTERIM BULLETIN Su b je ct to R evision W ithout Notice Q 1P JR G POWER TRANSISTOR ENGINEERING BULLETIN -July 15, 1971 -ELECTRontcs inc. TYPE PG1200 thru PG1211, 5 A M P NPN SILICON PLANAR POWER TRANSISTORS

transistors t1p50

Abstract: texas instruments tip47 texas instruments tip50 tip50
Contextual Info: TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS D E C E M B E R 1971 - R E V IS E D M A Y 1995 • 40 W at 25°C Case Temperature • 1 A Continuous Collector Current TO-220 PACKAGE TOP VIEW 2 A Peak Collector Current N. o 20 mJ Reverse-Energy Rating

Contextual Info: TIPI 45, TIPI 46, TIP147 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP140, TIP141 and TIP142 • 125 W at 25°C Case Temperature • 10 A Continuous Collector Current

Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP115, TIP116 and TIP117 T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature

Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP110, TIP111 and TIP112 T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature

transistor c 1971

Contextual Info: TIPI 40, TIPI 41, TIP142 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP145, TIP146 and TIP147 • 125 W at 25°C Case Temperature • 10 A Continuous Collector Current

TIP122T

Contextual Info: TIPI 20, TIPI 21, TIP122 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP125, TIP126 and TIP127 T 0 -2 2 0 PACKAGE TOP VIEW • 65 W at 25°C Case Temperature

Contextual Info: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN

SN55325

Abstract: D969 ISN55326 SN5404 SN54154 IN4607 76013d 76017D YC-710
Contextual Info: T E X A S IN S T R - C L I N / I N T F O TI 8961724 TEXAS IN STR ÖFJflTblTSM < LIN /IN TFC 007bDlS 4 f 91D 76012 D SN55325 MEMORY CORE DRIVER D969, MARCH 1971-R EV ISED SEPTEMBER 1986 J PACKAGE TOP VIEW) 600-mA Output Capability Fast Switching Times TJ

et 1103

Abstract: PG1212 PG1213 PG1214 PG1215 PG1216 PG1217 PG1218 PG1219 PG1220
Contextual Info: A P I E L E C T R O NI C S 0043592 A P I I NC E L E C TRONI CS INC 13AÛÛ9R T-áS13 DE I 00435^2 DDODOTS 7 INTERIM BULLETIN t S u b je ct to Revision Without Notice -J u ly 20, 1971 o W POWER TRANS!*T0R ENGINEERING fU PL^W lis S' TYPE PG1212 thru PG1223> 5 A M P NPN

TMS3001

Abstract: 25CC SN7400 SN7416 SN7473
Contextual Info: TM S 3 0 0 0 LR-DUAL 25 BIT STATIC SHIFT REGISTER T M S 3001 LR-DUAL 32 BIT STATIC SHIFT REGISTER features FE8RUARY 1971 • S ta tic logic • D C to 1 M H z operation • L o w pow er dissipation • Push-pull output buffers • T T L com patible description

PG1018

Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
Contextual Info: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN

PG1157

Abstract: PG1158 PG1159 PG1160 PG1161 PG1162 PG1163 PG1164 PG1165
Contextual Info: 0043592 A P I A P I E L E C T R Q N IC S TÑT^ -J 3 A 0 0 8 9 ELECTRONICS INC 13 ~7~-oiJ - / f n BE | D 0 4 3 S “ia DnQQQai 1 IN TERIM B U L L E T IN S u b je ct to Revision W ithout Notice -July 15, 1971 - POWER TRANSISTOR ENGINEERING BULLETIN P r Ii R

transistor n53

Abstract: 2N4070 PGI386 PGI380 PGI381 PGI382 PGI383 PGI385
Contextual Info: 004359 2 13 A PI E L E C T RO NI CS 1 3 A 0 1 20 INC d e | a o t a s i a onnaiao 2 Jj j e T ^ 3 “// B U L L E T lW r im Subject to Revision W ithout Notice. ‘ - J u ly 2 0 , 1971 . . POWER TRANSISTOR ENGINEERING RiJU ttlN 10 AMP NPN PLANAR TO ~3 PREMIUM GRADE

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

PG1212

Abstract: PG1213 PG1214 PG1215 PG1216 PG1217 PG1218 PG122
Contextual Info: A P I ; 0043592 A P I EL E C T R O N IC S IN C E LECTR ON IC S INC 13AÛ095 T - a 3 13 D F | 0 0 4 3 S cia ODOOCHS 7 INTERIM BULLETIN o t Su b ject to Revision Without Notice -J u ly 20, 1971 t/J -H POWER T R A N S A R ENGINEERING BU’UTW S' Rs TYPE PG1212 thru PG122$ 5 AM P NPN

2N2657

Abstract: 2N2658 HA 1156 R PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156
Contextual Info: 0043592 A P F E L E CT RON IC S 2ÖA TNC' ÿ f ; A P I ELECTRONICS INC "e g 0 ^ 0 0 4 3 5 ^ 2 D D D Q 1 4 Ì >4 .0149 ., I IN TE R IM B U LLE TIN : - S u b j e c t to R e v is io n - ; 1 - W it h o u t N o tic e - A P R IL 15, 1971 • ' \ • POWER TRANSISTOR '