BUX78SMD
Abstract: No abstract text available
Text: BUX78SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed
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BUX78SMD
O276AB)
15-Aug-02
BUX78SMD
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BUX77A
Abstract: BUX77A-220M BUX78A BUX78A-220M LE17 5339
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS
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BUX77A-220M
BUX78A-220M
BUX77A
BUX78A
-100V
BUX77A-220M
O220M
O-257AB)
BUX77A
BUX78A
BUX78A-220M
LE17
5339
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR BUX78 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX78
-100V
O-213AA)
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tcase
Abstract: No abstract text available
Text: BUX77A BUX78A Bipolar NPN / PNP Devices in a Hermetically Sealed TO66 Metal Package MECHANICAL DATA Dimensions in mm • Hermetic Metal Package 3.61 0.142 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 • Screening Options Available 0.71 (0.028) 0.86 (0.034)
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BUX77A
BUX78A
O213AA
tcase
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BUX77A
Abstract: BUX78A LE17 7743
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77A
BUX78A
BUX77A
-100V
O-213AA)
BUX78A
LE17
7743
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NPN Transistor TO220 VCEO 80V 100V
Abstract: Silicon PNP Epitaxial Planar Transistor to220 NPN Transistor VCEO 80V 100V BUX77A BUX78A
Text: BUX77A–220M BUX78A–220M MECHANICAL DATA Dimensions in mm 10.6 0.42 4.6 (0.18) 3.70 Dia. Nom FEATURES 10.6 (0.42) 1.5(0.53) 16.5 (0.65) 0.8 (0.03) NPN AND PNP SILICON PLANAR EPITAXIAL TRANSISTORS • Hermetic TO220 Isolated Metal Package • Screening Options Available
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BUX77A
BUX78A
O220M
O-257AB
BUX77A
NPN Transistor TO220 VCEO 80V 100V
Silicon PNP Epitaxial Planar Transistor to220
NPN Transistor VCEO 80V 100V
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BUX78
Abstract: No abstract text available
Text: BUX78 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a
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BUX78
O213AA)
1-Aug-02
BUX78
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Untitled
Abstract: No abstract text available
Text: J.£ii£.u <^>£tni-Conauctoi \Pioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX78 SILICON PLANAR EPITAXIAL PNP TRANSISTOR ABSOLUTE MAXIMUM RATINGS(rc.2s-c«*»<*««.«M) VCBO
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BUX78
-100V
200PC
-t-200Â
20MHz
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS
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BUX77A-220M
BUX78A-220M
BUX77A
BUX78A
-100V
BUX77A-220M
O220M
O-257AB)
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77A
BUX78A
BUX77A
-100V
O-213AA)
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BUX78
Abstract: LE17 8580
Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR BUX78 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX78
-100V
O-213AA)
BUX78
LE17
8580
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BUX78
Abstract: st marking code TO-257 transistor 257
Text: BUX78ESY BUX78HR Hi-Rel PNP bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 31 TO-257 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified
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BUX78ESY
BUX78HR
O-257
BUX78HR
O-257
BUX78
st marking code
TO-257
transistor 257
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BUX78A
Abstract: No abstract text available
Text: BUX78A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a
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BUX78A
O213AA)
1-Aug-02
BUX78A
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BUX78ASMD
Abstract: No abstract text available
Text: BUX78ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed
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BUX78ASMD
O276AB)
15-Aug-02
BUX78ASMD
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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2SB5950
Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Text: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect
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2N5410
9FT36
9UX78
BUX78
2SA1069AL
2N6191
2SB869
2SB933
2SB945
2SB5950
B0540C
to-53
2SB595-0
B0242c
2N3186
2N3198
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Bux81
Abstract: BUY12 NPN/8D140 NPN/SML1258
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BUX60 BUX61 BUX62 BUX63 BUX64 BUX65 BUX66 BUX67 BUX67A BUX67C BUX69 BUX70 BUX77 BUX77 CECC BUX77-SM BUX77A BUX77A-220M BUX78 BUX78 CECC BUX78-SM BUX78A BUX78A-220M BUX78A-SM BUX78-SM BUX80 BUX81
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BUX60
BUX61
BUX62
BUX63
BUX64
BUX65
BUX66
BUX67
BUX67A
BUX67C
Bux81
BUY12
NPN/8D140
NPN/SML1258
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Untitled
Abstract: No abstract text available
Text: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4
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BUR10
BUR11
BUR12
BUX77
2N4910
2N4911
2N5427
2N5428
2N5429
2NI5430
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2n5430
Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
Text: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V
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BUR10
BUR11
BUR12
BUX77
BUX78
2N4910
2N4898
2N4911
2N4899
2N4912
2n5430
411 00337
BDY57
BU912
TO-59 Package
BOY90
BUR21
2N4900
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Untitled
Abstract: No abstract text available
Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428
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0DQ0337
BUR10
BUR11
BUR12
BUX77
2N4910
2N4911
2N4912
N5427
2N5428
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2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1
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BYV34-300SM
BYV34-400ASM
BYV34--
400RSM
400SM
BYV34-500ASM
BYV34-500RSM
BYV34-500SM
LM137-SM
2n3866s
DIODE 69a LM
2N3904CSM
2N3904DCSM
2N3904D
LM7805sm
2N3055E
LM7808S
LCC3 weight
bfy82
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IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M
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BZX55C5V6CSM
T0220SM
2N2222CSM
2N2907CSM
BCW33CSM
BZX55C7V5CSM
2N2369ACSM
2N3209CSM
3250C
BCY59CSM
IRF5402
IRFN540
IRFN630
IRFN530
IRFN640
8YV32-5
W06C
2205-M
IRFN733
IRFn342
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BDV56
Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”
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2N2218
2N2218A
2N2219
2N2219A
2N2913
2N2914
2N2915
2N2916
2N2917
2N2918
BDV56
BDV57
2N3055
TIPL777
BUS11A
cv9936
BUX11
2N6033
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BUY46
Abstract: hirel bux83
Text: SEF1ELAB LTD Type No. 37E Onllon'i,y Polarity 6133137 □DOOOSfl Package V c E O C cont hF E @ VCE/'C »T PD BUX48 BUX49 BUX50 B0X51 BUX52 SCREEN HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * TO 3 T039 T039 T039 T039 400 90 125 200 250 15 3.5 3.5
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BUX48
BUX49
BUX50
B0X51
BUX52
BUX53
BUX54
BUX55
BUX59
BUX60
BUY46
hirel
bux83
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