BUX77A
Abstract: BUX77A-220M BUX78A BUX78A-220M LE17 5339
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS
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BUX77A-220M
BUX78A-220M
BUX77A
BUX78A
-100V
BUX77A-220M
O220M
O-257AB)
BUX77A
BUX78A
BUX78A-220M
LE17
5339
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BUX77ASMD
Abstract: No abstract text available
Text: BUX77ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUX77ASMD
O276AB)
15-Aug-02
BUX77ASMD
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tcase
Abstract: No abstract text available
Text: BUX77A BUX78A Bipolar NPN / PNP Devices in a Hermetically Sealed TO66 Metal Package MECHANICAL DATA Dimensions in mm • Hermetic Metal Package 3.61 0.142 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 • Screening Options Available 0.71 (0.028) 0.86 (0.034)
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BUX77A
BUX78A
O213AA
tcase
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BUX77A
Abstract: BUX78A LE17 7743
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77A
BUX78A
BUX77A
-100V
O-213AA)
BUX78A
LE17
7743
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NPN Transistor TO220 VCEO 80V 100V
Abstract: Silicon PNP Epitaxial Planar Transistor to220 NPN Transistor VCEO 80V 100V BUX77A BUX78A
Text: BUX77A–220M BUX78A–220M MECHANICAL DATA Dimensions in mm 10.6 0.42 4.6 (0.18) 3.70 Dia. Nom FEATURES 10.6 (0.42) 1.5(0.53) 16.5 (0.65) 0.8 (0.03) NPN AND PNP SILICON PLANAR EPITAXIAL TRANSISTORS • Hermetic TO220 Isolated Metal Package • Screening Options Available
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BUX77A
BUX78A
O220M
O-257AB
BUX77A
NPN Transistor TO220 VCEO 80V 100V
Silicon PNP Epitaxial Planar Transistor to220
NPN Transistor VCEO 80V 100V
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BUX77A
Abstract: No abstract text available
Text: BUX77A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a
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BUX77A
O213AA)
1-Aug-02
BUX77A
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS
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BUX77A-220M
BUX78A-220M
BUX77A
BUX78A
-100V
BUX77A-220M
O220M
O-257AB)
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX77A
BUX78A
BUX77A
-100V
O-213AA)
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tcase
Abstract: No abstract text available
Text: BUX77A–220M BUX78A–220M MECHANICAL DATA Dimensions in mm NPN AND PNP SILICON PLANAR EPITAXIAL TRANSISTORS 10.6 0.42 4.6 (0.18) 3.70 Dia. Nom FEATURES 10.6 (0.42) 1.5(0.53) 16.5 (0.65) 0.8 (0.03) • Hermetic TO220 Isolated Metal Package • Screening Options Available
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BUX77A
BUX78A
O220M
O-257AB
tcase
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2n4441 transistor
Abstract: SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS M E TA L PA C K A G E S F O R N E W D E S I G N S TO257 TO254 TO258 TO267 Tabless Z-Tab Flexy-Lead P O W E R M O S F E T S , T R A N S I S T O R S , D I O D E S , V O L TA G E R E G U L AT O R S
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O257AA
O257AB*
IP117AG
IP117AHVG
IP117G
IP117HVG
IP120AG-05-12-15
IP120G-05-12-15
IP123AG-05-12-15
2n4441 transistor
SML1004RGN
IRFV360 semelaB
irfy430
BUZ10
BUZ50
2N6661
BYV34 Series
2N4441
BYV29 Series
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Bux81
Abstract: BUY12 NPN/8D140 NPN/SML1258
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BUX60 BUX61 BUX62 BUX63 BUX64 BUX65 BUX66 BUX67 BUX67A BUX67C BUX69 BUX70 BUX77 BUX77 CECC BUX77-SM BUX77A BUX77A-220M BUX78 BUX78 CECC BUX78-SM BUX78A BUX78A-220M BUX78A-SM BUX78-SM BUX80 BUX81
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BUX60
BUX61
BUX62
BUX63
BUX64
BUX65
BUX66
BUX67
BUX67A
BUX67C
Bux81
BUY12
NPN/8D140
NPN/SML1258
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lm3i7
Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
Text: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24
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IN4001CSMU
IN4003CSMD
60DCSM
222IA
2N2221DCSM
2N2222ADCSM
2N2222DCSM
2N2369ADCSM
2N2453D
2N2639DCSM
lm3i7
BFD22
ic LM7812
LM3I7-220M
Lti086
pi38a
2N3904D
LM7924
BFD48
BYVI43-35M
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