BUV26A Search Results

BUV26A

Contextual Info: SavantIC Semiconductor Product Specification BUV26A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor

F266

Abstract: AF266 BUV26 BUV26A
Contextual Info: I I D N AUER PHIL I P S / D I S C R E T E 0020440 740 BUV26 BUV26A ^ 5 3 1 3 1 J SILICON POWER TRANSISTORS High-speed, glass-passivated npn pow er transistors in a T 0 -2 2 0 envelope intended fo r fast sw itching applications such as high frequency and e fficie n cy converters, sw itching regulators and m o to r c o n tro l.

BUV26

Abstract: BUV26A 11/BUV26
Contextual Info: PHILIPS INTERNATIONAL 4SE D 711002b D031GbT 1 EiPHIN BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-22 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.

D988

Abstract: BUV26F Scans-00459 0031G73 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF
Contextual Info: PHILIPS INTERNATIONAL MSB D ca 711Ga5b 0Q31G73 3 Q P H I N _ BUV26F BUV26AF J1 T - 3 3 - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control

Contextual Info: i i N AMER PHILIPS/DISCRETE bbS3T31 QQ2fl44fl 740 b^E D IAPX BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a TO-220 envelope intended fo r fast switching applications such as high frequency and efficiency converters, switching regulators and m otor control.

Contextual Info: N AUER PHILIPS/DISCRETE b5E D • bb53531 0DSfl452 171 I IAPX BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

BUV26

Abstract: BUV26A
Contextual Info: I I N AMER P H I L I P S / D I S C R E T E h*\Z D • ^53^31 DDBfl44fl 740 H A P X BUV26 BUV26A v _ 7 SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-220 envelope intended fo r fast switching

BUV26F

Abstract: BUV26AF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high

26AF

Abstract: BUV26AF BUV26F IEC134 0le30 vqe 14 display
Contextual Info: PHILIPS INT ERNATIONAL MSE » O 711Ga5b DQ31G73 3 EJPHIN BUV26F BUV26AF T-33-07 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control

BUV26A

Contextual Info: Inchange Semiconductor Product Specification BUV26A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For use in high frequency and efficiency converters,switching regulators and motor

Z944

Abstract: 26AF BUV26AF BUV26F 2u45
Contextual Info: J> m b^E N AUER PHIL I P S / D I S C R E T E bb53^31 □□SÖ4SS 171 I IAPX '' BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

b0743

Abstract: KT819A B0545 BOT54 PT9784 2N3055-5 mje1660 40636 1561-0403 044VH4
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 .- 10 15 20 >= 30 PT9784A 2N3055/5 SPT3713 SOT9210 044VH1 BLW97 40325 2SC2609 ~~~~~~ 35 40 45 50 S01480 B0142 S3771 BOX13 BOX13 BOX13 40251 MJ2801 MJ2801 MJ2801 KT819A 1561-0403 1561-0404 1561-0404 BOX13/40251

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

diode 1000V 10a

Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Contextual Info: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40