BTI53T31 Search Results

Contextual Info: bti53T31 00 32 3 3 1 Philips Semiconductors T10 APX ^^^Preliminai^specificatlon Hybrid CATV amplifier module BGD885 — N A1ER PHILIPS/DISCRETE PINNING -SOT11SD FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121

7Z66

Abstract: BYX39-1400 BYX39-600 016T oowe BYX39 BYX39-1400R BYX39-600R IEC134 BYX39 400
Contextual Info: AMER PH ILIPS/DISCRETE 25E ^53^31 D 0022Û1S 1 Hi BYX39 SERIES 7 = 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333— F005 Silicon diodes in a DO— 4 metal envelope, capable o f absorbing transients and Intended for use in power rectifier application.

transistor IC BT 134

Abstract: sot23 a60 PMBT5551
Contextual Info: • bbSBTBl 0D25flô2 atD ■ APX N ANER PHILIPS/DISCRETE PMBT5551 t.7E D _ _ _ _ A_ SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal tran sisto r fo r general purposes and especially te le ph o n y applications and encapsulated in a SO T23 envelope.

Contextual Info: Product specification Philips Semiconductors CNW84/CNW85 Heavy duty optocouplers FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body DIL encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm

Contextual Info: bb53R31 0D2707D b7b * A P X bRE D N AUER PH ILI PS/ DIS CRET E Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SOD106A envelope. The envelope

Contextual Info: CNX35U CNX36U CNX39U OPTOCOUPLERS O p tically coupled isolators consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable f o r T T L integrated circuits. Features • • • • High ou tpu t/inpu t D C current transfer ratio

Contextual Info: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

s3331

Contextual Info: P h ilip s S em icond uctors Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm minimum • High current transfer ratio and

transistor BD 339

Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Contextual Info: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.

BYR79-500

Abstract: BYR79 D025 M30851 Q02-24
Contextual Info: N AMER PHILIPS/DISCRETE SSE D OQSS 4L3 BYR79 SERIES ^5 3 *1 3 1 7 ^ 0 3 - t V ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery

BT148W

Abstract: fl-3535 gt200
Contextual Info: • ^53^31 □□SSböl 0h2 ■ APX N AUER PHILIPS/DISCRETE b7E » THYRISTORS Glass-passivated, sensitive-gate th y ris to rs in SO T-223 plastic envelopes suitable fo r surface m ou n tin g . T he y are intended fo r general purpose sw itch in g and phase-control applications.

Contextual Info: _/V_ BDV92 BDV94 BDV96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.

Contextual Info: 25E D N AMER PHILIPS/DISCRETE • ^53^31 0022615 1 Bi BYX39 SERIES A 7= 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable o f absorbing transients and intended for use ip power

BUZ84

Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
Contextual Info: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE T> bb53^31 002612^ OMb I IAPX 2N2907 2N2907A l SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.

BZW86-27

Abstract: BZW86 BZW86-7V5R BZW86-56 BZW86 Series BZW86-7V5 BZW86-9V1 IEC134 DO-30 philips RSM
Contextual Info: TGD D N AMER PHILIPS/ D IS CR ET E • bbS3T31 0GlDb‘i2 b BZW86 SERIES TRANSIENT SUPPRESSOR DIODES A range of diffused silicon diodes in a DO-30 metal envelope intended for use in the p r o ­ tection of the electrical and electronic equipment against voltage transients.