BP317
Abstract: BSX20 TRANSISTOR bsx20
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor BSX20
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M3D125
BSX20
MAM264
SCA54
117047/00/02/pp8
BP317
BSX20
TRANSISTOR bsx20
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BSX20
Abstract: No abstract text available
Text: BSX20 High Speed Switching Transistors Features: • NPN Silicon Planar epitaxial Transistors. · Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. · High speed saturated switching application. Absolute Maximum Ratings
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BSX20
BSX20
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BSX20
Abstract: bsx20 01 bsx-20
Text: BSX20 Low Power Bipolar Transistors Feature: • NPN Silicon Planar Switching Transistors. Applications: • High speed saturated switching applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E -
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BSX20
BSX20
bsx20 01
bsx-20
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BC107 equivalent transistors
Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
Text: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued
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2N1613
2N1711
2N1893
2N2219
2N2219A
2N2222/A
2N2369/A
2N2484
2N2905
2N2905A
BC107 equivalent transistors
2n5401 equivalent
BC557 equivalent
2N2907 equivalent
2n2905 replacement
bc327 equivalent
bc237 equivalent
MPSa06 equivalent
equivalent for BC337
bc327 replacement
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2N2369 SOT-23
Abstract: nec RF package SOT89 2SC934 BSX26 2N5180 2SC389 BFY63 s0918 BSX87 2SC288A
Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 >= Manufacturer V(BR)CEO fT (V) (Hz) hFE 15 15 15 15 15 15 15 15 15 15 500M 500M 500M 500M 500M 500M 500M 500M 500M 500M 40 40 40 40 40 40 40
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2SC3735
BFR54
BSX20
PH2369
ZTX313
ZTX314
2N2369
2SC389
2N2369 SOT-23
nec RF package SOT89
2SC934
BSX26
2N5180
BFY63
s0918
BSX87
2SC288A
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ic1 ne555
Abstract: 555 ic CR25 resistor NE555 timer of ic1 NE555 NE555N timer 555 timer construction and components NE555N IC timer IC1 NE555 pin configuration ic1 555 timer
Text: Norfolk Amateur Radio Club DF100 direction finder project for “Foxhunting” I ntroduction The DF100 is a simple direction finder designed for ‘Fox Hunt’ events on 2 metres, although could be adapted for other bands. Basically it works by using 2 identical Dipoles parallel with each other and
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DF100
DF100.
100pF
BSX20
12MHz
ic1 ne555
555 ic
CR25 resistor
NE555 timer
of ic1 NE555
NE555N timer
555 timer construction and components
NE555N IC timer
IC1 NE555 pin configuration
ic1 555 timer
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MOTOROLA 2N5179
Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R
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A12FR10
CR20-010R
A12FR100
CR20-100R
A12FR120
CR20-120R
A12FR20
CR20-020R
A12FR40
CR20-040R
MOTOROLA 2N5179
motorola 2N2219
motorola 2N2222A
motorola mpq3904
MOTOROLA 2N2905A
MJ3001 equivalent
motorola 2N4427
motorola 2N2219A
2N3819 MOTOROLA
motorola 2N3866
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bu808 equivalent
Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200
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2N3778
O-205AD/TO-39
2N3792
O-204AA/TO-3
2N3791
2N3798
bu808 equivalent
bu808
2N4001 diode
equivalent bu808
2N3953
2N4957
2N3908
2N3916
2N3930
BU143
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l 00276^ BAPX I BSX20 _ V _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and
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BSX20
-10mA
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P346A
Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
Text: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20
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BSX19
19552B
BSX20
19553X
BSY95A
19572G
19573C
ME9001
19331F
ME9002
P346A
ME8003
SGS C407
BSX20 2n2222a
BFR37
sgs-ates transistors
C760
P348A
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2n2222 fairchild
Abstract: BFR37 2N915 2n930 price P346A 2N2369 2N2369A 2N914 BC119 BSX20
Text: Fairchild Semiconductors Semicondti^Hn Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors Metal Can TO IS R EFER EN C E T A B L E For medium speed - see General Purpose Section. C H A R A C T E R IS T IC S @ 25"C M A X R A T IN G S
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BSX20
35250H
BSX26
35251F
2N914
35252D
2N2369
35253B
2N2369A
35254X
2n2222 fairchild
BFR37
2N915
2n930 price
P346A
BC119
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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2N2446
Abstract: ST6110 2n2379 2N2368-51 PMT123 transistor t051 2N709A 2SC423 ME8101 2N955
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12
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2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
4000Mt
ST6110
2N2368-51
PMT123
transistor t051
2N709A
2SC423
2N955
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
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tube az2
Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)
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BSS38
BSW41A
T0-18
BSX19
BSX20
BSX21
BSY95A
h--22->
crt6-25
tube az2
2n2389
2n2906 sis
BSS68
BSW41
2N2369
2N2906 to92
BFX34
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SOT-23 X1
Abstract: BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92
Text: Microminiature devices transistors primarily intended for hybrid, thin and thick film circuits _ w Type No. = £ g 3 J I VCB0 | « Maximum Ratings Vceo IC|*V T. O a ! I V I Im A I IV I book 1 parts 1 and 2 hf t Ptg min. at 25 C <°C) Im W I
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BCW31R
BCW32R
BCW33R
OT-23
BC108A
BC108B
BC108C
BCW71R
BCW72R
SOT-23 X1
BC1088
BFR63
BFR94
BCX66
BFQ18
BFT26
bd135
BD139 heat sink
BFT92
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MHT1909
Abstract: MHT1910 MHT2002 MHT2003 MHT2004 MHT2008 MHT1803 germanium transistors NPN 2SA451 MP503
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
MHT1909
MHT1910
MHT2002
MHT2003
MHT2004
MHT2008
MHT1803
germanium transistors NPN
2SA451
MP503
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PDF
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ST7100
Abstract: 310M CI44 GW 9n BFW74 BFW75 BFW76 BFX53 T046 R110
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
4000Mt
ST7100
310M
CI44
GW 9n
BFW74
BFW75
BFW76
BFX53
T046
R110
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MP2144
Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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NPN110.
2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
MP2144
MP2145
MP2143A
2G222
2N1029
2SB236
transistor 2SB235
2N1315
XC141
2N3132
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PDF
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MM2550
Abstract: BC406
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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2PC1815L
2PC1815
10xx0.
7Z88986
smd npn 2n2222
bf471
BSR62 equivalent
EQUIVALENT TRANSISTOR bc549c
transistor bf 175
transistor bc547 PH in metal detector
tunnel diode
BSY95A
BF470
BC200
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