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    BQ4013MA Price and Stock

    Rochester Electronics LLC BQ4013MA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    DigiKey BQ4013MA-85 Tube 11
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    Texas Instruments BQ4013MA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Verical BQ4013MA-85 416 11
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    BQ4013MA-85 327 11
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    Rochester Electronics BQ4013MA-85 743 1
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    Rochester Electronics LLC BQ4013MA-120

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    DigiKey BQ4013MA-120 Tube 21
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    BQ4013MA-120 Tube 22
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    Texas Instruments BQ4013MA-120

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Verical BQ4013MA-120 22 22
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    Rochester Electronics BQ4013MA-120 22 1
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    Benchmarq Microelectronics Inc BQ4013MA-120

    BQ4013MA-120
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    Verical BQ4013MA-120 59 22
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    Rochester Electronics BQ4013MA-120 60 1
    • 1 $14.17
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    • 100 $13.32
    • 1000 $12.04
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    Find more BQ4013MA price and stock on Findchips.com

    BQ4013MA Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BQ4013MA-120 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013MA-120 Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-120 Texas Instruments 128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 32-DIP MODULE 0 to 70 Original PDF
    BQ4013MA-120 Texas Instruments 128K x 8 NONVOLATILE SRAM Original PDF
    bq4013MA-120N Texas Instruments NVRAM, 128K x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-70 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013MA-70 Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    bq4013MA-70N Texas Instruments NVRAM, 128K x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-85 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 85 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013MA-85 Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-85 Texas Instruments 128K x 8 NONVOLATILE SRAM Original PDF
    BQ4013MA-85 Texas Instruments 128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 32-DIP MODULE 0 to 70 Original PDF
    bq4013MA-85N Texas Instruments NVRAM, 128K x 8 Nonvolatile SRAM Original PDF

    BQ4013MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013MA-120

    Abstract: bq4013Y bq4013YMA-120 bq4013
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013MA-120 bq4013Y bq4013YMA-120 bq4013

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013

    Abstract: bq4013MA-120 bq4013Y bq4013YMA-120
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013 bq4013MA-120 bq4013Y bq4013YMA-120

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 32-pin 576-bit

    bq4013

    Abstract: bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit bq4013 bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013

    Abstract: bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit bq4013 bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 32-pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bd42

    Abstract: No abstract text available
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 32-pin 576-bit bd42

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013

    Abstract: bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit bq4013 bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85

    Cross Reference

    Abstract: sram cross reference M48Z512A TI Cross Reference Search DS1220AB DS1220AD DS1225AB DS1225AD DS1270W DS1230W
    Text: Tech Brief 39 NV SRAM Cross Reference Table www.maxim-ic.com CROSSING NV SRAMS Two companies make nonvolatile NV SRAMS that are direct or close crosses to the NV SRAMs manufactured by Dallas Semiconductor. The following table contains of list of these crosses.


    Original     		PDF DS1220AB DS1220AD DS1225AB DS1225AD DS1230AB DS1230Y DS1230W DS1245AB DS1245Y DS1245W Cross Reference sram cross reference M48Z512A TI Cross Reference Search DS1220AB DS1220AD DS1225AB DS1225AD DS1270W DS1230W

    bq4013ma

    Abstract: No abstract text available
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description > D ata retention in th e absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 32-pin 10-year bq4013 576-bit bq4013 bq4013ma

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y ili U N IT R O D E - 128Kx8 Nonvolatile SRAM Features General Description >• D ata rete n tio n for a t le a st 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral


    OCR Scan     		PDF 32-pin bq4013/Y 128Kx8 576-bit bq4013Y-70 bq4013YMA-120N bq4013 bq4013

    dallas ds80c320 high speed micro guide

    Abstract: DS1640
    Text: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .


    OCR Scan     		PDF

    nv SRAM cross reference

    Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
    Text: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written


    OCR Scan     		PDF DS1258AB-XXX DS1258Y-XXX DS1220AB-XXX 1220AB-XXX-IND DS1220AD-XXX DS1220AD-XXX-IND DS1225AB-XXX DS1225AD-XXX 1225AD-XXX-IND nv SRAM cross reference Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM

    stopwatch using 8051 microcontroller

    Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
    Text: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:


    OCR Scan     		PDF 150-mil S2105 S2105 stopwatch using 8051 microcontroller 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288