BIPOLAR TRANSISTOR TD TR TS TF Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18604D 2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m itter Diode and B uilt-in E fficient A ntisaturation N etw ork for 1600 V Applications POWER TRANSISTORS

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: 2N5337 2N6191 MJE16002 MJE16004 MJH16002 MR856
Contextual Info: MOTOROLA Order this document by MJE16002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE16002 * MJE16004 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive

GA100NA60UP

Abstract: ultrafast igbt information OF ic 7400
Contextual Info: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: 100 amp npn darlington power transistors TIP142 Application Note TIP142 Bipolar Transistor npn darlington transistor 200 watts TIP142 TIP147 tip142,tip147 amplifier circuits TIP140-D TIP147
Contextual Info: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.

MJE18604D2

Contextual Info: MOTOROLA Order this document by MJE18604D2/D SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

tip141 equivalent

Abstract: tip142/TIP147 AMPLIFIER CIRCUIT TIP142 TIP147 DIODE 638 MOTOROLA darlington transistor with built-in temperature c 100 amp npn darlington power transistors npn darlington transistor 150 watts npn darlington transistor 200 watts 1N5825 MSD6100
Contextual Info: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.

80K-40

Abstract: tip142/TIP147 AMPLIFIER CIRCUIT bipolar transistor td tr ts tf 1N5825 MSD6100 TIP140 TIP141 TIP142 TIP145 TIP146
Contextual Info: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.

MJ16010

Abstract: MJ16012 ic 10 209 IC 7403 MJ16010 DATASHEET AM503 MJW16010 MJW16012 P6302 MJ16012 MOTOROLA
Contextual Info: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA MJ16010 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

transistor IC 1597

Abstract: 221D BUT11AF Transistor 244 Motorola MOTOROLA POWER TRANSISTOR rev 6
Contextual Info: MOTOROLA Order this document by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

SUT465N

Abstract: npn-pnp dual
Contextual Info: SUT465N Semiconductor Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 NPN+PNP Chips in SOT-26 PKG

Contextual Info: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.

LM 3177 switching reg

Contextual Info: , , PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by

TRANSISTOR TC 100

Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

vgea

Abstract: GT50J301
Contextual Info: TOSHIBA GT50J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT50J301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 20.5MAX. The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V ce (sat) —2.7V (Max.)

C 12 PH Zener diode

Abstract: A102 TRANSISTOR hall effect sensor 3144 "battery protection" C 12 PH diode C 12 PH zener diode datasheet C 3197 din 40839 Gear Wheel Speed Sensor LT HALL SENSOR
Contextual Info: 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by

MJ16020

Abstract: MJ16022
Contextual Info: MOTOROLA Order this document by MJ16020/D SEMICONDUCTOR TECHNICAL DATA MJ16020 MJ16022 Advance Information SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

Contextual Info: bitemational li«R Rectifier Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

transistor MJH 11020

Abstract: mjh11021 transistor MJH 11021 JH transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Darlington Silicon Power Transistors PNP M JH 11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High DC Current Gain @ 10 Adc — hpg = 400 Min All Types

lt 3133

Abstract: 3144 hall effect position
Contextual Info: 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by

transistor mje13005

Abstract: equivalent mje13005 MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching

motorola transistor 2N6547

Abstract: transistor tl 187 POWER BIPOLAR JUNCTION TRANSISTOR TO-204AA IC PWM regulator inductive load NPN 300 VOLTS vce POWER TRANSISTOR 2N6546 2N6547
Contextual Info: MOTOROLA Order this document by 2N6547/D SEMICONDUCTOR TECHNICAL DATA 2N6547 Designer's  Data Sheet Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and

transistor equivalent table

Abstract: 3155 power transistor P6042 transistor crossover
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836 D esigner’s Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for