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    BIPOLAR TRANSISTOR TD TR TS TF Search Results

    BIPOLAR TRANSISTOR TD TR TS TF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR TRANSISTOR TD TR TS TF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GA100NA60UP

    Abstract: No abstract text available
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA100NA60UP E78996 2002/95/EC OT-227 18-Jul-08 GA100NA60UP PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 2N5337 2N6191 MJE16002 MJE16004 MJH16002 MR856
    Text: MOTOROLA Order this document by MJE16002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE16002 * MJE16004 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive


    Original     		MJE16002/D MJE16002 MJE16004 MJE16004 MJE16002 MJH16002 MJE16002/D* NPN 200 VOLTS 20 Amps POWER TRANSISTOR 2N5337 2N6191 MR856 PDF

    GA100NA60UP

    Abstract: ultrafast igbt information OF ic 7400
    Text: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA100NA60UP OT-227 18-Jul-08 GA100NA60UP ultrafast igbt information OF ic 7400 PDF

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: 100 amp npn darlington power transistors TIP142 Application Note TIP142 Bipolar Transistor npn darlington transistor 200 watts TIP142 TIP147 tip142,tip147 amplifier circuits TIP140-D TIP147
    Text: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TIP140/D* TIP140/D tip142/TIP147 AMPLIFIER CIRCUIT 100 amp npn darlington power transistors TIP142 Application Note TIP142 Bipolar Transistor npn darlington transistor 200 watts TIP142 TIP147 tip142,tip147 amplifier circuits TIP140-D TIP147 PDF

    MJE18604D2

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE18604D2/D SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient


    Original     		MJE18604D2/D* MJE18604D2/D MJE18604D2 PDF

    GA100NA60UP

    Abstract: No abstract text available
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 GA100NA60UP PDF

    tip141 equivalent

    Abstract: tip142/TIP147 AMPLIFIER CIRCUIT TIP142 TIP147 DIODE 638 MOTOROLA darlington transistor with built-in temperature c 100 amp npn darlington power transistors npn darlington transistor 150 watts npn darlington transistor 200 watts 1N5825 MSD6100
    Text: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		TIP140/D TIP140 TIP141* TIP142* TIP145 TIP146* TIP147* TIP140, TIP141, tip141 equivalent tip142/TIP147 AMPLIFIER CIRCUIT TIP142 TIP147 DIODE 638 MOTOROLA darlington transistor with built-in temperature c 100 amp npn darlington power transistors npn darlington transistor 150 watts npn darlington transistor 200 watts 1N5825 MSD6100 PDF

    80K-40

    Abstract: tip142/TIP147 AMPLIFIER CIRCUIT bipolar transistor td tr ts tf 1N5825 MSD6100 TIP140 TIP141 TIP142 TIP145 TIP146
    Text: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		TIP140/D TIP140 TIP141* TIP142* TIP145 TIP146* TIP147* TIP140, TIP141, 80K-40 tip142/TIP147 AMPLIFIER CIRCUIT bipolar transistor td tr ts tf 1N5825 MSD6100 TIP140 TIP141 TIP142 TIP145 TIP146 PDF

    MJ16010

    Abstract: MJ16012 ic 10 209 IC 7403 MJ16010 DATASHEET AM503 MJW16010 MJW16012 P6302 MJ16012 MOTOROLA
    Text: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA MJ16010 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


    Original     		MJ16010/D MJ16010 MJ16012 MJW16012 MJ16010 MJW16010 MJ16010/D* ic 10 209 IC 7403 MJ16010 DATASHEET AM503 P6302 MJ16012 MOTOROLA PDF

    transistor IC 1597

    Abstract: 221D BUT11AF Transistor 244 Motorola MOTOROLA POWER TRANSISTOR rev 6
    Text: MOTOROLA Order this document by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art


    Original     		BUT11AF/D BUT11AF BUT11AF 221Dor BUT11AF/D* transistor IC 1597 221D Transistor 244 Motorola MOTOROLA POWER TRANSISTOR rev 6 PDF

    SUT465N

    Abstract: npn-pnp dual
    Text: SUT465N Semiconductor Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 NPN+PNP Chips in SOT-26 PKG


    Original     		SUT465N 500mW OT-26 OT-26 KSD-T5P006-000 SUT465N npn-pnp dual PDF

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.


    Original     		PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101 PDF

    npn-pnp dual

    Abstract: dual npn-pnp sut465n
    Text: SUT465N Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • 2 NPN+PNP Chips in SOT-26 PKG Package : SOT-26


    Original     		SUT465N 300mW OT-26 OT-26 KSD-T5P006-001 npn-pnp dual dual npn-pnp sut465n PDF

    TRANSISTOR TC 100

    Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 TRANSISTOR TC 100 GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf PDF

    MJ16020

    Abstract: MJ16022
    Text: MOTOROLA Order this document by MJ16020/D SEMICONDUCTOR TECHNICAL DATA MJ16020 MJ16022 Advance Information SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


    Original     		MJ16020/D* MJ16020/D MJ16020 MJ16022 PDF

    lt 3133

    Abstract: 3144 hall effect position
    Text: 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by


    Original     		A3197LLT A3197LU lt 3133 3144 hall effect position PDF

    transistor mje13005

    Abstract: equivalent mje13005 MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210
    Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching


    Original     		PDF

    motorola transistor 2N6547

    Abstract: transistor tl 187 POWER BIPOLAR JUNCTION TRANSISTOR TO-204AA IC PWM regulator inductive load NPN 300 VOLTS vce POWER TRANSISTOR 2N6546 2N6547
    Text: MOTOROLA Order this document by 2N6547/D SEMICONDUCTOR TECHNICAL DATA 2N6547 Designer's  Data Sheet Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and


    Original     		2N6547/D* 2N6547/D motorola transistor 2N6547 transistor tl 187 POWER BIPOLAR JUNCTION TRANSISTOR TO-204AA IC PWM regulator inductive load NPN 300 VOLTS vce POWER TRANSISTOR 2N6546 2N6547 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18604D 2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m itter Diode and B uilt-in E fficient A ntisaturation N etw ork for 1600 V Applications POWER TRANSISTORS


    OCR Scan     		18604D MJE18604D2 125-C PDF

    LM 3177 switching reg

    Abstract: No abstract text available
    Text: , , PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by


    OCR Scan     		A3197LLT A3197LU LM 3177 switching reg PDF

    vgea

    Abstract: GT50J301
    Text: TOSHIBA GT50J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT50J301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 20.5MAX. The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V ce (sat) —2.7V (Max.)


    OCR Scan     		GT50J301 00A/jus vgea GT50J301 PDF

    Untitled

    Abstract: No abstract text available
    Text: bitemational li«R Rectifier Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		400Hz) IRGPH50S O-247AC PDF

    transistor MJH 11020

    Abstract: mjh11021 transistor MJH 11021 JH transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Darlington Silicon Power Transistors PNP M JH 11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High DC Current Gain @ 10 Adc — hpg = 400 Min All Types


    OCR Scan     		MJH11020 MJH11022 MJH11017 JH11019 MJH11021 JH11018 JH11020 MJH11022 MJH11017 transistor MJH 11020 transistor MJH 11021 JH transistor PDF

    transistor equivalent table

    Abstract: 3155 power transistor P6042 transistor crossover
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836 D esigner’s Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for


    OCR Scan     		2N6836 P-6042 transistor equivalent table 3155 power transistor P6042 transistor crossover PDF