BGA PACKAGE 170 Search Results
BGA PACKAGE 170 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
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TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR7404PU |
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
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BGA PACKAGE 170 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MACH4A
Abstract: JTAG jtag mhz jtag 14 PQFP-144 ispLSI 2128-A M4A5-64 M5A3-384
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208-Ball 256-Ball 100-Ball 49-Ball 144-Ball 100-Pin 128-Pin 48-Pin 44-Pin 144-Pin MACH4A JTAG jtag mhz jtag 14 PQFP-144 ispLSI 2128-A M4A5-64 M5A3-384 | |
gk 7031Contextual Info: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package. |
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W2637A, W2638A W2639A 5990-3892EN gk 7031 | |
W2639A
Abstract: lpddr W2638A-101 W3635A N5425 9104a Oscilloscope Probe to PC E2678A specification of Logic Analyzer W2638A
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W2637A, W2638A W2639A an120 5990-3892EN W2639A lpddr W2638A-101 W3635A N5425 9104a Oscilloscope Probe to PC E2678A specification of Logic Analyzer | |
entek Cu-56
Abstract: thick bga die size Cu-56 stencil tension BGA "direct replacement" bga rework "ball collapse" height
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12x12 bga thermal resistance
Abstract: SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack
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SZZA005 thoseI1450 12x12 bga thermal resistance SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack | |
Contextual Info: Product Specifications PART NO: REV: 1.1 VL493T2863E-E7S/E6S General Information 1GB 128MX72 DDR2 SDRAM VLP ECC 200 PIN SO-RDIMM Description Features The VL493T2863E is a 128Mx72 Double Data Rate DDR2 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit DDR2 Synchronous DRAMs in BGA packages, a 25-bit Registered buffer in BGA package, a zero delay PLL clock in BGA package, and a 2K EEPROM in an 8-pin MLF |
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VL493T2863E-E7S/E6S 128MX72 VL493T2863E 128Mx8 25-bit 200-pin 200-pin, | |
DDR2-667
Abstract: DDR2-800 PC2-5300 PC2-6400
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VL493T2863E-E7S/E6S 128MX72 VL493T2863E 128Mx8 25-bit 200-pin 200-pin, DDR2-667 DDR2-800 PC2-5300 PC2-6400 | |
digital rf delay line 2 GHzContextual Info: MAMUSM0008 Digital Switched Delay Line, 1.8 - 2.4 GHz Features V 1.00 BGA Package n 750 pS Dynamic Range, 50 pS Step Size n BGA Package n Parallel Control Interface n Positive Control Logic n Cascadable n No off chip components required Description The M/A-COM MAMUSM0008 is a 0 to 750 pS variable |
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MAMUSM0008 MAMUSM0008 MAMUSM0008TR MAMUSM0008-TB digital rf delay line 2 GHz | |
digital rf delay line 2 GHz
Abstract: rf delay line MAMUSM0008 MAMUSM0008TR 72 vna 10 GHz rf delay line
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MAMUSM0008 MAMUSM0008 digital rf delay line 2 GHz rf delay line MAMUSM0008TR 72 vna 10 GHz rf delay line | |
0.65mm pitch BGA
Abstract: BGA reflow guide BGA Solder Ball 0.35mm BGA Package 0.35mm pitch SSYZ015 C6000 TMS320C6000 TMS320C6202 0.35mm BGA fanout
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SPRA429A TMS320C6000 C6000 0.65mm pitch BGA BGA reflow guide BGA Solder Ball 0.35mm BGA Package 0.35mm pitch SSYZ015 TMS320C6202 0.35mm BGA fanout | |
BGA reflow guide
Abstract: C6000 TMS320C6000 TMS320C6202 0.35mm BGA fanout 0.65mm pitch BGA
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SPRA429B TMS320C6000 C6000 BGA reflow guide TMS320C6202 0.35mm BGA fanout 0.65mm pitch BGA | |
V54C3128
Abstract: LA5A6
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V54C3128 128Mbit LA5A6 | |
MSABContextual Info: MOSEL VITELIC V54C3128 16/80/40 4(BGA) 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE 8M X 16 16M X 8 32M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 |
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V54C3128 128Mbit MSAB | |
LA5A6
Abstract: V54C3128
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V54C3128 128Mbit LA5A6 | |
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Contextual Info: Product Specifications PART NO.: VL393T2863E-E7M/E6M/D5M REV: 1.1 General Information 1GB 128Mx72 DDR2 SDRAM VLP ECC REGISTERED DIMM 240-PIN Description The VL393T2863E is a 128Mx72 DDR2 SDRAM high density DIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 25-bit registered buffer in BGA package, a |
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VL393T2863E-E7M/E6M/D5M 128Mx72 240-PIN VL393T2863E 128Mx8 25-bit 240-pin 240-pin, 80TYP | |
H5PS2G83AFR-S6C
Abstract: CAPACITOR CK 158 VN0810 DDR2-800 PC2-6400 DDR2 samsung pc2-6400 samsung dram H5PS2G83AFR
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VL491T2863B-E7S 128Mx72 200-PIN VL491T2863B 128Mx8 200-pin 200-pin, VN-081009 H5PS2G83AFR-S6C CAPACITOR CK 158 VN0810 DDR2-800 PC2-6400 DDR2 samsung pc2-6400 samsung dram H5PS2G83AFR | |
240-PIN
Abstract: DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
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VL393T2863E-E7M/E6M/D5M 128Mx72 240-PIN VL393T2863E 128Mx8 25-bit 240-pin 240-pin, 80TYP DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400 | |
H5PS2G83AFR-S6CContextual Info: Product Specifications PART NO.: VL491T2863B-E7S REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ULP ECC UNBUFFERED SO-CDIMM 200-PIN Description The VL491T2863B is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a zero delay PLL clock in BGA package, and a |
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VL491T2863B-E7S 128Mx72 200-PIN VL491T2863B 128Mx8 200-pin 200-pin, VN-081009 H5PS2G83AFR-S6C | |
Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension |
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M13S128168A | |
Transistor 5C5Contextual Info: IC71V08F32xS08 IC71V16F32xS08 Document Title 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP - 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM Revision History Revision No History Draft Date 0A 0B Initial Draft Add 73 ball BGA package |
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IC71V08F32xS08 IC71V16F32xS08 MCP001-0B 73-ball IC71V16F32CS08-85B73 IC71V16F32DS08-85B73 Transistor 5C5 | |
Contextual Info: TMS320C6472 SPRS612G – JUNE 2009 – REVISED JULY 2011 1.1 www.ti.com CTZ/ZTZ BGA Package Bottom View The TMS320C6472 devices are designed for a package temperature range of 0°C to 85°C (commercial temperature range) or -40°C to 100°C (extended temperature range). |
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TMS320C6472 SPRS612G TMS320C6472 500-MHz 625-MHz 737-Pin | |
TS512MQR72V4TContextual Info: 240PIN DDR2 400 Registered DIMM 4096MB With 256Mx4 CL3 TS512MQR72V4T Description Placement The TS512MQR72V4T is a 512M x 72bits DDR2-400 Registered DIMM. The TS512MQR72V4T consists of 18 pcs st.512Mx4bits DDR2 SDRAMs in 56 ball BGA package, 2 pcs register in 96 ball uBGA package, 1 pcs |
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240PIN 4096MB 256Mx4 TS512MQR72V4T TS512MQR72V4T 72bits DDR2-400 512Mx4bits 240-pin | |
TXS0104EZXUR
Abstract: TXS01xx
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TXS0104E SCES651C 000-V A114-B) A115-A) 15-kV TXS0104EZXUR TXS01xx | |
TXS0104EPWR
Abstract: YF04E TXS0104ED TXS0104EYZTR TXS0104EZXUR YF04
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TXS0104E SCES651C 000-V A114-B) A115-A) 15-kV TXS0104EPWR YF04E TXS0104ED TXS0104EYZTR TXS0104EZXUR YF04 |