LPDDR Search Results

atmel 324

Abstract: ARM926EJ-S AT91SAM ISO7816 SAM9G45 AT91SAM9G45B-CU UHP4 ddr2 16bit NAND Flash controller ecc DFSDM
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static

DFSDM

Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

micron lpddr

Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
Contextual Info: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4

free circuit diagram of motherboard

Contextual Info: NCP51145 Product Preview DDR 1.8 Amp Source / Sink VTT Termination Regulator The NCP51145 is a linear regulator designed to supply a regulated VTT termination voltage for DDR−II, DDR−III, LPDDR−III and DDR−IV memory applications. The regulator is capable of actively

A1833

Contextual Info: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4

Contextual Info: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

Contextual Info: MS46H64M32L2SB-XX *PRELIMINARY 2Gb LPDDR 2 x 32Mx32 FEATURES  Package: GENERAL DESCRIPTION • 152 Plastic Ball Grid Array (PBGA), 14 x 14 mm Microsemi MS46H64M32L2SB package-on-package (PoP) MCP product combines two Mobile LPDRAM devices in a single MCP.

ddr2 ram repair

Abstract: lpddr2 lpddr2 datasheet JESD209 Jedec JESD209 JESD208 intel lpddr2 JESD209-2 ddr ram repair JESD*208
Contextual Info: Agilent Technologies N5413B DDR2 and LPDDR2 Compliance Test Application for Infiniium 9000 and 90000 Series Oscilloscope Data Sheet Test, debug and characterize your DDR2 and LPDDR2 designs quickly and easily The Agilent Technologies N5413B DDR2 and LPDDR2 compliance test

MT46H64M16

Abstract: 6S55 MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

D9KG

Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
Contextual Info: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

MT46H128M16

Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
Contextual Info: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4

lpddr2

Abstract: lpddr2 datasheet AES256 sha256 Atmel touchscreen ARM926EJ-S ISO7816 ad2y DFSDM
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU TI AT91SAM9G46 Preliminary Summary AT M EL • AT91 ARM Thumb-based Microcontrollers C O N • FI D EN • – 4-port, 4-bank DDR2/LPDDR Controller

216-ball

Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

ELPIDA lpddr

Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

AT91SAM9M11

Abstract: VC 5022 emmc bga 162 EN 50156-1 schematic diagram of ip camera sensor H.264 encoder chip 2012 cmos 4000 logic book eMMC 4.51 charge battery 4060 4X4 push-button matrix keyboard
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

lpddr2

Abstract: Atmel touchscreen AT91SAM9M11 lpddr2 datasheet wVGA touchscreen 5 wire 16-bit color sha256 Datasheet LPDDR2 SDRAM 12M hz crystal ARM926EJ-S e.mmc
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static

6437CS

Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

LPDDR2

Abstract: samsung lpddr2 samsung* lpddr2 lpddr2 datasheet IDD3P lpddr2 samsung Datasheet LPDDR2 lpddr2 samsung datasheet lp-ddr2 Lpddr2 Idd3n
Contextual Info: Samsung LPDDR2 Power Calculation July 2010 Mobile Planning Samsung Semiconductor Basic Power Equation table ‰ The Basic Rule for Calculating DRAM Power Power calculation method Background power Activate power CORE [{IDD0 – IDD3N*tRASmin+IDD2N*tRPmin }/tRCmin]

Contextual Info: BE230A Display Embedded System Features •TI 1GHz 32-bit ARM Cortex-A8 Single Core CPU •512MB LPDDR •eMMC 4.41 I/F 8GB •WINCE 6.0 CORE OS •Support SD/SDHC Card •7" TFT LCD with 800x480 Resulution •4-wired Resistive Touch Panel •1 x RS232C, 1xCAN BUS

Contextual Info: Agilent U7231B DDR3 and LPDDR3 Compliance Test Application for Infiniium Series Oscilloscopes Datasheet Test, debug and characterize your DDR3 and LPDDR3 designs quickly and easily The Agilent Technologies U7231B DDR3 and LPDDR3 compliance test application provides a fast and easy

gk 7031

Contextual Info: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package.

BA 49181

Abstract: AT91SAM9G45b AT91SAM9G45B-CU TD 346 sam9g45 atmel 935 TA 49181 49110 NR 3M EMC Products se 047 equivalent
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static

Contextual Info: IS43/46LD16160A IS43/46LD32800A 256Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION JULY 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O