BFG741 Search Results

BFG741

Contextual Info: Objective specification Philips Semiconductors NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFG741 SbE D • 7110flSb DÜMS3S7 bTl IPHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base

BFG741

Contextual Info: BFG741 NPN 7 GHz wideband transistor PINNING FEATURES PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 1 emitter 2 base • SOT223 plastic envelope 3 emitter • High output voltage 4 collector • Integrated emitter-ballasting

SOT-173

Abstract: sot173 BFP96 BFQ32C
Contextual Info: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A

BFG741

Abstract: L0130
Contextual Info: Philip^em iconductors • bbSBTBl DQBlHbfl DTb M A P X ^ ^ b je c tiv ^ p e c if ic a tiO T NPN 7 GHz wideband transistor BFG741 N AUER PHILIPS/DISCRETE bTE D PINNING FEATURES DESCRIPTION PIN • Low distortion • Gold metallization ensures excellent reliability

MSB002

Abstract: PH* SOT223 transistor NPN planar RF transistor NPN RF Amplifier BFG741 philips MATV amplifiers
Contextual Info: Objective specification Philips Semiconductors ^ 3 3 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE T> BFG741 7110flSb 004S3S7 bTl «PHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base

Contextual Info: Philips Semiconductors H b b S B ^ B l O D B lIb fl 0Tb H A P X ^O bjectivespecification NPN 7 GHz wideband transistor BFG741 N APIER P H IL IP S /D IS C R E T E FEATURES b'lE D PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures excellent reliability

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

BFT92A

Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Contextual Info: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E

SOT-143R

Abstract: sot-143 rl SOT143R sot143 RA
Contextual Info: 99 Surface Mount Devices Wideband Transistors cont. f (MHz) P ino u t See S e ctio n VII 12 12 2000 2000 X AB — 2000 2000 2000 800 12 10.9 10.9 10.9 17.5 800 2000 2000 2000 800 S Q X AB Q 2.4 2.4 2.3 2.3 2.3 800 800 800 800 800 17.5 17.5 17 17 17 800 800

BFG591 amplifier

Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors

BFG520

Abstract: BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit
Contextual Info: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers RF amp see Fig. 1 SOT323 SOT23 SOT143 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 BFG92A/X BFG25A/X BFG505/X BFG520/X MIX see RF amp O SC see RF amp ante nna \ /