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    BF10 Search Results

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    BF10 Price and Stock

    GCT Semiconductor Inc BF100-16-A-D-1-0640-L-C

    16POS, 2MM PITCH SOCKET, DIL, SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF100-16-A-D-1-0640-L-C Digi-Reel 4,464 1
    • 1 $0.82
    • 10 $0.668
    • 100 $0.82
    • 1000 $0.82
    • 10000 $0.82
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    BF100-16-A-D-1-0640-L-C Cut Tape 4,464 1
    • 1 $0.82
    • 10 $0.696
    • 100 $0.82
    • 1000 $0.82
    • 10000 $0.82
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    BF100-16-A-D-1-0640-L-C Reel 3,400 850
    • 1 -
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    • 100 -
    • 1000 $0.50876
    • 10000 $0.43248
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    E-Switch Inc TL1105BF100Q

    SWITCH TACTILE SPST-NO 0.05A 12V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TL1105BF100Q Bulk 4,332 1
    • 1 $0.2
    • 10 $0.171
    • 100 $0.1487
    • 1000 $0.13131
    • 10000 $0.11618
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    Master Electronics TL1105BF100Q 4,247
    • 1 -
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    • 1000 $0.1124
    • 10000 $0.1
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    New Advantage Corporation TL1105BF100Q 6,000 1
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.1297
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    GCT Semiconductor Inc BF100-10-A-C-1-0625-L-C

    10POS, 2MM PITCH SOCKET, DIL, SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF100-10-A-C-1-0625-L-C Digi-Reel 2,954 1
    • 1 $0.82
    • 10 $0.692
    • 100 $0.82
    • 1000 $0.82
    • 10000 $0.82
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    BF100-10-A-C-1-0625-L-C Cut Tape 2,954 1
    • 1 $0.82
    • 10 $0.692
    • 100 $0.82
    • 1000 $0.82
    • 10000 $0.82
    Buy Now
    BF100-10-A-C-1-0625-L-C Reel 1,800 900
    • 1 -
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    • 1000 $0.50367
    • 10000 $0.42815
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    Newark BF100-10-A-C-1-0625-L-C Reel 1,800 900
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.724
    • 10000 $0.724
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    BF100-10-A-C-1-0625-L-C Cut Tape 1,531 1
    • 1 $1.08
    • 10 $0.965
    • 100 $0.852
    • 1000 $0.724
    • 10000 $0.724
    Buy Now

    GCT Semiconductor Inc BF100-16-A-C-0-0625-L-C

    16POS, 2MM PITCH SOCKET, DIL, SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF100-16-A-C-0-0625-L-C Cut Tape 2,776 1
    • 1 $1.14
    • 10 $0.968
    • 100 $1.14
    • 1000 $1.14
    • 10000 $1.14
    Buy Now
    BF100-16-A-C-0-0625-L-C Digi-Reel 2,776 1
    • 1 $1.14
    • 10 $0.929
    • 100 $1.14
    • 1000 $1.14
    • 10000 $1.14
    Buy Now
    BF100-16-A-C-0-0625-L-C Reel 1,400 700
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.71723
    • 10000 $0.60971
    Buy Now
    Newark BF100-16-A-C-0-0625-L-C Reel 2,100 700
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.04
    • 10000 $1.04
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    BF100-16-A-C-0-0625-L-C Cut Tape 1,400 1
    • 1 $1.56
    • 10 $1.39
    • 100 $1.23
    • 1000 $1.04
    • 10000 $1.04
    Buy Now

    onsemi FDP020N06B-F102

    MOSFET N-CH 60V 120A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP020N06B-F102 Tube 1,576 1
    • 1 $5.13
    • 10 $5.13
    • 100 $5.13
    • 1000 $5.13
    • 10000 $5.13
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    Rochester Electronics FDP020N06B-F102 2,307 1
    • 1 $3.08
    • 10 $3.08
    • 100 $2.9
    • 1000 $2.62
    • 10000 $2.62
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    Richardson RFPD FDP020N06B-F102 800
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    • 1000 $2.78
    • 10000 $2.78
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    Avnet Silica FDP020N06B-F102 100 12 Weeks 50
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    EBV Elektronik FDP020N06B-F102 13 Weeks 50
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    New Advantage Corporation FDP020N06B-F102 250 1
    • 1 -
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    • 100 $4.66
    • 1000 $4.31
    • 10000 $4.31
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    Wuhan P&S FDP020N06B-F102 520 1
    • 1 $7.74
    • 10 $7.74
    • 100 $4.94
    • 1000 $3.75
    • 10000 $3.75
    Buy Now

    BF10 Datasheets (138)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF-100.000MBE-T TXC Oscillators, Crystals and Oscillators, OSC XO 100.000MHZ LVDS SMD Original PDF
    BF-100.000MCE-T TXC Oscillators, Crystals and Oscillators, OSC XO 100.000MHZ LVDS SMD Original PDF
    BF100-06-A-C-0-0625-N-D GCT Semiconductor 6W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-08-A-C-0-0625-N-D GCT Semiconductor 8W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF1000A Seiko Epson Surface Mount Crystal Oscillators Original PDF
    BF-1001 Essentra Components Catalog Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, FOOT 1.57 X .35IN BLACK Original PDF
    BF100-10-A-C-0-0625-N-D GCT Semiconductor 10W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-12-A-C-0-0625-N-D GCT Semiconductor 12W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-14-A-C-0-0625-N-D GCT Semiconductor 14W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-16-A-C-0-0625-N-D GCT Semiconductor 16W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-18-A-C-0-0625-N-D GCT Semiconductor 18W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF-1002 Essentra Components Catalog Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, BUMPERS/FEET BLACK 1.18"CUSH DIA Original PDF
    BF100-20-A-C-0-0625-N-D GCT Semiconductor 20W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-22-A-C-0-0625-N-D GCT Semiconductor 22W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-24-A-C-0-0625-N-D GCT Semiconductor 24W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-26-A-C-0-0625-N-D GCT Semiconductor 26W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-28-A-C-0-0625-N-D GCT Semiconductor 28W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-30-A-C-0-0625-N-D GCT Semiconductor 30W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF-10032 Honeywell Sensing and Productivity Solutions Switches - Snap Action, Limit Switches - SWITCH PLAIN BEARING Original PDF
    BF100-32-A-C-0-0625-N-D GCT Semiconductor 32W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    ...

    BF10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 1 2 3 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值:2.0 AMP INSULATION RESISTANCE 绝缘电阻值:1000 MΩ Min.


    Original
    BF105: BF105-001 BF105 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 Global Connector Technology Ltd. - BF100: 2.0mm PITCH SOCKET, DUAL ROW, SURFACE MOUNT 5 4 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 Ordering Grid CURRENT RATING 电流额定值: 2 AMP INSULATOR RESISTANCE 绝缘电阻值: 1000 MEGOHMS MIN. BF100 XX


    Original
    BF100: BF100 20mOHMS 94-V0 BF100 PDF

    BF1005SR

    Abstract: BF1005 BF1005S BF1005SW
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW PDF

    BF1005

    Abstract: VPS05178
    Text: BF1005 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178 PDF

    BF1009SR

    Abstract: No abstract text available
    Text: BF1009SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 9V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1009SR EHA07215 OT143R Dec-04-2002 200MHz BF1009SR PDF

    BF1009SW

    Abstract: No abstract text available
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW PDF

    CRYDOM BF100

    Abstract: PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control PA100V-0-10V PA100 4-20ma ssr 100C
    Text: C3VZDDM BF100 and PA100 EUROPE SSR Control Modules Features: □ Burst Firing and Phase Angle control versions □ Directly mounted to SSR □ LED output indication □ Remote or local control BF100 Series modules are time proportional "Burst Firing" controllers for use with zero


    OCR Scan
    BF100andPA100 BF100 400msecs PA100 4-20mA PA100V-0-10V BF100C-F3 200ms CRYDOM BF100 PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control 4-20ma ssr 100C PDF

    BF1005S

    Abstract: VPS05178
    Text: BF1005S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178 PDF

    BF1005SR

    Abstract: marking NZs
    Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs PDF

    BF1005SR

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S, PDF

    BF1009SW

    Abstract: BF1009S BF1009SR BF1009W
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1009S. EHA07215 BF1009S OT143 BF1009SR OT143R Feb-18-2004 200MHz BF1009SW BF1009S BF1009SR BF1009W PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 1 2 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 5 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值: 2.0 AMPERE INSULATION RESISTANCE 绝缘电阻值: 1000M Ω Min.


    Original
    BF105: 1000M 94-V0 I0250 BF105 PDF

    BF1009S

    Abstract: VPS05178
    Text: BF1009S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 9V  Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1009S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1009S VPS05178 PDF

    BF1009SW

    Abstract: marking g1s
    Text: BF1009SW Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 9V  Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1009SW VPS05605 EHA07215 OT343 Jun-28-2001 200MHz BF1009SW marking g1s PDF

    BF1005

    Abstract: BF1005R BF1005W BFP181 BFP181R
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original
    BF1005. BF1005 OT143 BF1005R OT143R BF1005 BF1005R BF1005W BFP181 BFP181R PDF

    BF1005

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005, PDF

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S, PDF

    BF1009SW

    Abstract: BF1009 marking code g2s
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s PDF

    Untitled

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1005. BF1005 BF1005R OT143 OT143R PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF 1012S


    OCR Scan
    BF1012S Q62702-F1627 1012S T-143 200MHz PDF

    bf1012s

    Abstract: BF1012 VPS05178
    Text: BF1012S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 12V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF1012S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz bf1012s BF1012 VPS05178 PDF

    siemens MOSFET 14

    Abstract: Marking G1s
    Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    BF1009S EHA07215 1009S Q62702-F1628 OT-143 200MHz 200MHz siemens MOSFET 14 Marking G1s PDF

    GBF10M1

    Abstract: BF10K2 GLF05F1 CF10N 20-TAP
    Text: A Passive Surface-Mount Delay Lines Designed for automatic insertion. 10-Tap Chip-Carrier Passive Delay Line— V2 " Sq. Part No. Part No. Part No. BJF10D1Œ GBF1OD10D BJF10F1S BF10F1Œ BF10D1Œ BF10F1 Hi BJF10G1Œ BJF10K1 BF10G1Œ BF10K1 BJF10L1 BJF10M1


    OCR Scan
    10-Tap BJF10D1OE BJF10F1S) BJF10G1OE BJF10K1 BJF10L1 BJF10M1 GBF1OD10D GBF10F1OE GBF10G1OE GBF10M1 BF10K2 GLF05F1 CF10N 20-TAP PDF

    DB1-822

    Abstract: BF1012
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627


    OCR Scan
    BF1012S 1012S Q62702-F1627 OT-143 800MHz 1012S DB1-822 BF1012 PDF