BF 830 TRANSISTOR Search Results

CBF423

Abstract: cbf420 CBF422 L250
Contextual Info: 'T-zn-o SI EM EN S A K T I E N 6 E S E L L S C H A F 47E D • Ô E 3 S b O S 0 D 2 b S7 1 T «SIEG NF-Bipolar-Transistoren / AF Bipolar Transistors High-Voltage Transistors Plastic Package NPN Type Max. rating s ^CEO Characteris tics h Pto. h FE ''CEsat

BF423

Abstract: BF421 bf 421 ic 421 PIN CONFIGURATION BF 200 transistors bf 423 f 423 F532 Q62702-F496 Q62702-F532
Contextual Info: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532

BF422

Abstract: BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

ic 421

Abstract: F496 BF421 BF423 Q62702-F496 Q62702-F532
Contextual Info: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532

F495

Abstract: BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

BF 830 transistor

Abstract: transistor 602 transistor bf 422 NPN CARACTERISTIQUES transistor bf 422 NPN transistor BF 423 emetteur video IW transistor transistor 139 BF transistor npn bf 422 BF 422
Contextual Info: *B F 422 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L Compì, of BF 423 * Preferred device Dispositif recommandé Video amplification A m plificateur Video vcEO Maximum power dissipation Plastic case Dissipation de puissance maximale

Contextual Info: S IE M E N S PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 420, BF 422 NPN Type Marking Ordering Code BF 421 BF 423

830 CE

Contextual Info: SIEMENS/ SPCLn SEMICONDS flfl 8236320 SIEMENS/ S P C L , SfcMlUurcua Dif|ö53b350 DD145bE □ 88D 14262 D 3 1 2 { T ra n s is to rs — bip olar T ra n sisto rs for high voltages P la stic p ackage TO 92 = N ^CEO PNP = P ^ CER* lc P.o. V mA mW /c B O LU_ u

BF 422

Contextual Info: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion

transistor Bf 606

Abstract: transistor bf 422 transistor 423 transistor 139 BF BF 830 transistor
Contextual Info: *B F 423 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP SILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 422 Preferred device D is p o s itif recommandé Video amplification A m plifica tio n Video Maxim um power dissipation

to92c

Abstract: MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N
Contextual Info: Selection Guide For complete information and data sheets please contact us on our internet homepage Leaded Components Varactor Diodes leaded Type Characteristics (TA = 25 °C) Maximum Ratings VR IF CT

LTM 4620

Abstract: 2060 JRC jrc 2060 NJU64B1 3565 jrc 2340 NJU6461 NJU6461XC irt 1260 jrc 2740
Contextual Info: m-JÊr A NJU6461 P R E L I M I N A R Y 1 2 — C H A R A C T E R D O T 2 - L I N E M A T R I X L C D C O N T R O L L E R PACKAGE OUTLINE GENERAL DESCRIPTION The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip.

SOT 86 MARKING 03

Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Contextual Info: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S

TRANSISTOR C 2577

Abstract: 50T60 C 2577 transistor ABE 422 BF 422 transistor bf 254 10A3 BF422 transistor bf 422
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video B-class p o w e r stages in TV-receivers Besondere M erkmale: Features: • K om plem entär zu BF 423

Contextual Info: NJU6461 P R E L I M I NARY 1 2 —C H A R A C T E R DOT 2-LINE MATRIX LCD CONTROLLER • GENERAL DESCRIPTION The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip. It contains voltage converter, bleeder resistance, CR

transistor bf 422

Abstract: BF 264 PNP transistor 263 BF 422
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video El-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Kom plem entär zu BF 422

VGU3

Abstract: 41CN IO 5503
Contextual Info: IN IJ U 6 4 6 1 12-CHARACTER 2-LINE DOT M A T R I X • PRELI Ml N A R Y LCD C O N T R O L L E R GENERAL DESCRIPTION PACKAGE OUTLINE The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip. It contains voltage converter, bleeder resistance, CR

transistors BC 639 029

Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
Contextual Info: Selection Guide Diodes leaded For complete information and data sheets please refer to our Data Book I and II, Small Signal Semiconductor Edition 03.92. RF-Schottky Diodes for Professional Applications Type Frequency Band GHz Maximum Ratings Characteristics (TA = 25 °C)

2060 JRC

Abstract: jrc 2060 jrc 2740 CA 3140 OP AMP jrc 4555 DJRQ jrc 3580 JRC 2100 CA 1340 jrc 2340
Contextual Info: I NJ U 6 4 6 1 12-CHARACTER DOT 2-LIN E MATRIX P R E L I Ml N A R Y LCD CONTROLLER DRIVER GENERAL DESCRIPTION • PACKAGE OUTLINE The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip. It contains voltage converter, bleeder resistance, CR

BF 830 transistor

Contextual Info: TIP42F; 42AF TIP42BF; 42CF _ / V . SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are TIP41F, TIP41AF, TIP41BF and TIP41CF.

BF184

Abstract: Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor
Contextual Info: filC D TELEFUNKEN E LE CT RONI C TTliUiiFyKlKllNl electronic • ÔTSOGTb OQDSlbô fi 7 = 3 /-/5 - BF184 ' CreativeTechnologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and controlled RF amplifier stages upt to 100 MHz Features: • Noise figure 3.S dB

T3D 53

Abstract: TIP42AF lem HA T3D 62 TIP41AF TIP41BF TIP41CF TIP41F TIP42 TIP42BF
Contextual Info: TIP42F; 42A F J ^ TIP42BF; 42CF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors,eachinaSO T186 envelope w ith an electrically insulated mounting base. NPN complements are TIP41F, T IP41AF, TIP41BF and TIP41CF. QUICK R E FER E N C E DATA

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

TIP41CF

Abstract: TIP41F TIP41AF TIP41BF TIP42BF TIP42F
Contextual Info: _ PHILIPS TIP42F; 42A F TIP42BF; 42CF J^ INT ERN AT ION AL SbE D • 7110ÛSb Ü04354S 15Û « P H I N r - 3 ? - / < 7 SILIC O N EPITAXIAL P O W E R T R A N S IS T O R S PNP silicon epitaxial power transistors, e a c h in a S O T 1 8 6 envelope with an electrically insulated