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    BD135 TRANSISTOR REPLACEMENT GUIDE Search Results

    BD135 TRANSISTOR REPLACEMENT GUIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD135 TRANSISTOR REPLACEMENT GUIDE Datasheets Context Search

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    bd135 TRANSISTOR REPLACEMENT GUIDE

    Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


    Original     		PDF BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


    Original     		PDF BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100

    2N4922

    Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A


    Original     		PDF BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


    Original     		PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		PDF BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference

    2SA1046

    Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


    Original     		PDF 2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876

    MJE3055 to247

    Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix


    Original     		PDF MJD2955 MJD3055 MJE2955 MJE3055 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJE3055 to247 Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100

    2SA1046

    Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc


    Original     		PDF 2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    BC 458

    Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON


    Original     		PDF MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161

    2sc-144

    Abstract: 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc


    Original     		PDF TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 220AB 2sc-144 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100

    BU108

    Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc


    Original     		PDF 2N3773 2N6609 2N3773* 2N6609 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


    Original     		PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


    Original     		PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement

    motorola MJ15001

    Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


    Original     		PDF MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139

    MJ15023 EQUIVALENT

    Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


    Original     		PDF MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100

    BU108

    Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


    Original     		PDF MJ15022 MJ15024 MJ15024 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100

    2SB631

    Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc


    Original     		PDF 2N6487, 2N6490 2N6488, 2N6491 220AB 2N6487 2N6488* 2N6491* TIP73B 2SB631 equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


    Original     		PDF MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement

    mje15033 replacement

    Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


    Original     		PDF MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100

    transistor mj11032 equivalent

    Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc


    Original     		PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326

    2SA1046

    Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100

    2SC1403

    Abstract: 2N6107 equivalent 2SD425 2SB743 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistors The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery switchmode applications such as:


    Original     		PDF BUS50 BUS50 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC1403 2N6107 equivalent 2SD425 2SB743 BU326 BU108 BU100

    BU108

    Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100

    Circuit details of BD237 equivalent

    Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD237 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 Circuit details of BD237 equivalent BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A