BD 157 TRANSISTOR Search Results

BD 157 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BD 157 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor BD 325 Abstract: BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA Text: MOTOROLA Order this document by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE	Original	PDF	BD157/D* BD157/D transistor BD 325 BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1012S150 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating in class C mode under DME pulse conditions at	Original	PDF	IB1012S150 IB1012S150 IB1012S150-REV-NC-DS-REV-NC
transistor f613 Abstract: transistor bc 567 Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.	Original	PDF	AO4604 AO4604 AO4604L -AO4604L 16789ABA2CDE9AFDC transistor f613 transistor bc 567
0x01FFFFFF Abstract: transistor BD 522 08FF ARM7500 Text: 1 14 11 Memory Subsystems 14.1 ROM interface 14-2 14.2 DRAM interface 14-7 14.3 DMA channels 14-16 ARM7500 Data Sheet ARM DDI 0050C Preliminary - Unrestricted This chapter describes the ROM and DRAM interfaces, and the DMA channels. 14-1 Memory Subsystems	Original	PDF	ARM7500 0050C 0x00000000 0x01FFFFFF, 32-bits 0x01FFFFFF transistor BD 522 08FF
Untitled Abstract: No abstract text available Text: LTC4260 Positive High Voltage Hot Swap Controller with I2C Compatible Monitoring DESCRIPTION FEATURES n n n n n n n n n n The LTC 4260 Hot Swap controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, the board supply	Original	PDF	LTC4260 4260fb
deflexion Abstract: B0158 bd157 BD NPN transistors BD 157 Text: BD 157 BD158 BD 159 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA TRANSISTORS S ILIC IU M NPN, MESA TRIPLE DIFFUSES PR E LIM IN A R Y DATA N O TIC E P R E LIM IN A IR E BD 157 to BD 159 transistors are designed for class A audio output stages in main operated	OCR Scan	PDF	B0158 deflexion bd157 BD NPN transistors BD 157
transistor BD 325 Abstract: transistor BD 240 transistor bd 375 transistor BD 157 Motorola Bipolar Power Transistor Data BD157 TRANSISTOR 158 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 2 5 0 -3 0 0 -3 5 0 VOLTS	OCR Scan	PDF	BD157 BD158 BD159 transistor BD 325 transistor BD 240 transistor bd 375 transistor BD 157 Motorola Bipolar Power Transistor Data TRANSISTOR 158
transistor BD 522 Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800 Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M \| BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	PDF	b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
zt158 Abstract: BD 149 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	PDF	IS22I MRF20030 zt158 BD 149 transistor
ksd 250v 10a Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072 Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715	OCR Scan	PDF	OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
BDT*63CF Abstract: 721H t63f Text: BDT62F; BDT62AF _ ^B D T 6 2 B F ; BDT62CF PHILIPS INTERN AT IO NA L SbE D 711DöEb 0043B4Ö SILICON DARLINGTON POWER TRANSISTORS p'h x n " T -3 3 -3 / PNP silicon darlington power transistors in a SOT 186 envelope with an electrically insulated mounting	OCR Scan	PDF	BDT62F; BDT62AF BDT62CF 0043B4Ö BDT63BF BDT63CF. BDT62F OT186. BDT62AF BDT*63CF 721H t63f
cqx 87 Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157	OCR Scan	PDF	AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
BFT65 Abstract: transistor bft65 f451 61 SIEMENS 25813 Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration	OCR Scan	PDF	BFT65 BFT65 Q62702-F451 fl235bDS transistor bft65 f451 61 SIEMENS 25813
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan	PDF

k 246 transistor fet Abstract: transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device	OCR Scan	PDF	BUK7675-55 SQT404 k 246 transistor fet transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
transistor bd 905 Abstract: IR2105 Ablebond 74-1 Text: Preliminary Data Sheet No. PD60139-H International l R Rectifier IR2105 HALF BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V • • • • Tolerant to negative transient voltage dV/dt immune	OCR Scan	PDF	PD60139-H IR2105 IR2105 low331 transistor bd 905 Ablebond 74-1
Untitled Abstract: No abstract text available Text: BSO 307N I nf ine on technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage Vqs • Enhancement mode Drain-Source on-state resistance ffos on • Avalanche rated Continuous drain current b • Dual N channel	OCR Scan	PDF	sisooo56 Q67000-S4012 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T
transistor c429 Abstract: zo 103 ma c336 transistors C338 c428 transistor Q62702-C338 WS450 16-BIS Text: BCW 61 BCX 71 PN P -Transistoren fü r IM F-Vorstufen und S chalteran w en dung BCW 61 und BCX 71 sind epitaktische PNP-Silizium-Planar-Transistoren mit Plastikum hüllung 23 A 3 DIN 41 869 SOT-23 für NF-Vorstufen und Schalteranwendungen. Sie eignen sich besonders für Dick- und Dünnfilmschaltungen. Beide Typen BCW 61 und	OCR Scan	PDF	OT-23) Q62702-C335 Q62702-C336 Q62702-C337 Q62702-C338 transistor c429 zo 103 ma c336 transistors C338 c428 transistor Q62702-C338 WS450 16-BIS
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	PDF	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	PDF	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
LDR 03 Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12 Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SIEMENS 5-V Low-Drop Fixed-Voltage Regulator TLE 4264 G Features • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low current consumption Overtemperature protection Short-circuit proof Suitable for use in automotive electronics	OCR Scan	PDF	Q67006-A9139 P-SOT223-4-1 OT-223 35b05

BD 157 TRANSISTOR Search Results

BD 157 TRANSISTOR Result Highlights (5)

BD 157 TRANSISTOR Datasheets Context Search

transistor BD 325

Untitled

transistor f613

0x01FFFFFF

Untitled

deflexion

transistor BD 325

transistor BD 522

zt158

ksd 250v 10a

BDT*63CF

cqx 87

BFT65

TFK diodes BYW 76

k 246 transistor fet

Transistor 2SA 2SB 2SC 2SD

2N2222A 338

transistor bd 905

Untitled

transistor c429

triac zd 607

D 5038 Transistor Horizontal

LDR 03

Untitled