BCY78D Search Results

BCY78DCSM

Contextual Info: BCY78DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BCY78D

Contextual Info: BCY78D Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 32V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: BCY78D Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 32V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: BCY78D Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 32V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

transistor ZTX302

Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE

ZTX504

Abstract: BC212 BC307 BC556A BC556B BC557A BC557B BC557C BCY77A BCY77B
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS Volts Volts nA Volts Min. Max. V CEIsatl *c < hFE at IcBO Min. Min. Max. at V CB o m V CBO V CEO Dice type at llc mA Volts Volts mA Max. *b mA fr C obo Min. Max. MHz Chip geometry PF BC556A 80 65 15 30 110 220

BD106

Abstract: BD107A BCY91 BCY39A BCY56 t01b 250M BCY40A BCY58 BCY59
Contextual Info: 37E D SEMELAB LT» 0133107 GQQ0037 3 • SflLB l-L. , ;V - r |- L i -, '-'.- - ' V ^ »■— T - A i* r r m l . 'i ? * * - . Reliability Option Polarity BCY39A BCY40A BCY56 BCY58 BCY59 HI-REL HI-REL S C REEN HI-REL HI-REL PNP PNP NPN NPN NPN TO 5 TO 5 TOI 8

bc461

Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
Contextual Info: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42

BC557P

Abstract: ZTX501 BC212P ZTX504 ZTX108 ZTX502 BC177P BC182P BC546P BC547P
Contextual Info: TAB LE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed fo r small signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE

ZTX502

Abstract: BC212 BC307 BC556A BC556B BC557A BCY77A BCY77B BCY77C ZTX504
Contextual Info: SbE ]> • TT70S7Ô GDG70MÛ 275 B Z E T B SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS IcBO V CE|sat| c at lc Max. ■b fr CoBO Min. Max. I at < V CEO Min. Min. Max. at VCB o m V cbo Dice type Volts Volts nA Volts Min. Max. mA Volts Volts mA mA MHz Chip

pnp hfe 120

Abstract: LCC1 transistor 200ma pnp 036w BCY58QF
Contextual Info: Search Results Part number search for devices beginning "BC477" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BC477 PNP TO18 80V 0.1A 50 220 5/2m 150MHz

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

bc558c

Abstract: BC212
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t

TRANSISTOR BC140

Abstract: applications of Transistor BC108 BC558C bc140 TRANSISTOR BC308B 2N2102 2N2605 2N4036 BC141 BC161
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

8c415

Abstract: TBC558B 2NL4957 bc456b LOW-POWER SILICON PNP BC456C BF739 bf414 Motorola TO92 BF96
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V{BR CEO - 5 10 BC321B BC559P MPS6535 MPS6535M 2SA1031 8C859 BC859 BC859 S1806 S1806 ~~g~~;~ 15 -20 BC455A BC456A BC559BP BC455B BC456B TBC558B T8C559B TBC558 f~g~~~ 25 30 - 35 40 45 50 55 60 65 70 75 80 85

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP