BCY78C Search Results

BCY78CSM

Contextual Info: BCY78CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: BCY78C Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 32V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: BCY78CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: BCY78C Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 32V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BCY78C

Contextual Info: BCY78C Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 32V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BCY781X

Abstract: 2N2007 2N3039 40P-40P 2N2800S LOW-POWER SILICON PNP BCW61RB motorola 20p 2sa881 BCY78V
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BCY58-7 BCW61C BCX78-9 BCW61RB BCW61RB BCY78BP BCW67C BCX75-40 BCY78VIII BCW67RB ~g~~: 15 20 25 30 35 40 BCY781X BCX78-10 BCWS1RC BCWS1RC BCY78CP BCWS7RC BCW6lD 2SA854 2SA854 2SA854 2SBl197K 2SBl197K 2SA1515

transistor ZTX302

Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

ZTX504

Abstract: BC212 BC307 BC556A BC556B BC557A BC557B BC557C BCY77A BCY77B
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS Volts Volts nA Volts Min. Max. V CEIsatl *c < hFE at IcBO Min. Min. Max. at V CB o m V CBO V CEO Dice type at llc mA Volts Volts mA Max. *b mA fr C obo Min. Max. MHz Chip geometry PF BC556A 80 65 15 30 110 220

BC557P

Abstract: ZTX501 BC212P ZTX504 ZTX108 ZTX502 BC177P BC182P BC546P BC547P
Contextual Info: TAB LE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed fo r small signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE

ZTX502

Abstract: BC212 BC307 BC556A BC556B BC557A BCY77A BCY77B BCY77C ZTX504
Contextual Info: SbE ]> • TT70S7Ô GDG70MÛ 275 B Z E T B SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS IcBO V CE|sat| c at lc Max. ■b fr CoBO Min. Max. I at < V CEO Min. Min. Max. at VCB o m V cbo Dice type Volts Volts nA Volts Min. Max. mA Volts Volts mA mA MHz Chip

pnp hfe 120

Abstract: LCC1 transistor 200ma pnp 036w BCY58QF
Contextual Info: Search Results Part number search for devices beginning "BC477" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BC477 PNP TO18 80V 0.1A 50 220 5/2m 150MHz

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BC307A

Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
Contextual Info: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C

TRANSISTOR BC140

Abstract: applications of Transistor BC108 BC558C bc140 TRANSISTOR BC308B 2N2102 2N2605 2N4036 BC141 BC161
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

8c415

Abstract: TBC558B 2NL4957 bc456b LOW-POWER SILICON PNP BC456C BF739 bf414 Motorola TO92 BF96
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V{BR CEO - 5 10 BC321B BC559P MPS6535 MPS6535M 2SA1031 8C859 BC859 BC859 S1806 S1806 ~~g~~;~ 15 -20 BC455A BC456A BC559BP BC455B BC456B TBC558B T8C559B TBC558 f~g~~~ 25 30 - 35 40 45 50 55 60 65 70 75 80 85

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP