BC859B Search Results

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

BC857

Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

BCB60

Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

Contextual Info: BC859BR Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

13c MARKING

Abstract: marking code 5y CMSH3-40 MARKING CODE 8Y CMZ5936B marking code c20a marking wc 8N Marking code CS CGDM marking code 4A
Contextual Info: Marking codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 1 A BC846A 4B BC859B 8 AC CMSZ5226B 1 A8 CMSZ5250B 4C BC859C 8 B1 CMSZ5222B 1 B BC846B 4E BC860A 8 BC CMSZ5227B 1 B8 CMSZ5251B 4F BC860B 8 C1 CMSZ5223B 1 C8 CMSZ5252B

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 i Pin configuration

Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon * “G” Lead Pb -Free COLLECTOR 3 1 1 BASE 2 SOT-23 Collector-Base Voltage BC856 BC857 BC858,BC859 BC856 BC857 BC858,BC859 Symbol VCEO Thermal Characteristics Characteristics

Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon * “G” Lead Pb -Free COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code (See 2 Table Below) 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating

BC857

Contextual Info: BC856A/B-BC857A/B BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

Contextual Info: BC859BW Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.220 h(FE) Max. Current gain.475

BCs56

Abstract: BC857Ser BC85 BC856 BC857 BC858 BC859
Contextual Info: BC856A/B-BC ’857A/B BC858A/R/C-BC859B/C G en eral P urpose t ran sisto r P N P Silicon < o iim o « c ; d i \< ; k \ 3 m v k m m — m □ 2 XX - r>«tic# C o ó t S ee S O I2 J H T >MI I I > K R ating Loiiector-E m itter Voltage BC856 Symbol Nuhic VCE0

BC857A

Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE T R A N SIST O R S BC856 BC858 BC860 IS S U E 6 - APRIL 1997 PARTM ARKING DETAILS C O M PLEM EN TAR Y TYPES BC856A-3A BC858C-3L BC856 BC846 BC856B-Z3B BC859A-Z4A BC857 BC847 BC857A-Z3E BC859B-4B BC858 BC848 BC857B-3F

d2 SMD TRANSISTORs pnp npn

Abstract: BCS59 2n2222a smd BC558B BC558C BC559 BC858B BC858C BC859 SMD marking bcw60
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

Contextual Info: BC859BL Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BC pnp 200mA

Abstract: BC856 BC856A BC857 BC857A BC858 BC858A BC859 PNP -50V -200mA sot23 transistor BC SERIES
Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F

BC860

Abstract: BC859 BC859A BC859B BC859C BC860A BC860B BC860C
Contextual Info: CDU BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A - 4A BC859B = 4B BC859C - 4C BC860 = 4H BC860A ss 4E PACKAGE OUTLINE DETAILS ALL DIM ENSIO NS IN m m BC860B = 4F BC860C = 4G Pin configuration 1 a BASE 2 = EMITTER 3 « COLLECTOR

BC558A

Abstract: 2N44Q3 bc327-16 bc558c BC556A 2N4401 surface mount BC337 sot23 BC556B SOT23 BC338-16 MP8A06
Contextual Info: S M A L L SIGNAL BIPOLAR TRANSISTORS PACKAGE Leaded Surface Mount Device TO-92 (SOT-23) # % hFE Veto (Voli) NPN PNP NPN PNP lc (mA) Low Noise BC549B BC559B BC849B BC859B 100 330 30 BC549C BC559C BC849C BC859C 100 600 2N4124 2N4126 Switchino 25 30 40 max.

Contextual Info: r r z SGS-THOM SON Ä T f M liœ m s e îli» !» BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS Type M arking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F • SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR

Contextual Info: BC859B Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m