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    BC859C Search Results

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    BC859C Price and Stock

    Rochester Electronics LLC BC859CLT1

    TRANS PNP 30V 0.1A SOT23-3
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    DigiKey BC859CLT1 Bulk 165,000 1,665
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    Rochester Electronics LLC BC859-C

    TRANS PNP 30V 0.1A SOT23-3
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    DigiKey BC859-C Bulk 26,800 13,172
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    Infineon Technologies AG BC859CE6327HTSA1

    TRANS PNP 30V 0.1A PG-SOT23
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    DigiKey BC859CE6327HTSA1 Reel 3,000 3,000
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    Avnet Americas BC859CE6327HTSA1 Reel 4 Weeks 45,000
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    Arrow Electronics BC859CE6327HTSA1 39,000 4 Weeks 3,000
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    Rochester Electronics BC859CE6327HTSA1 383,161 1
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    EBV Elektronik BC859CE6327HTSA1 5 Weeks 3,000
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    Vyrian BC859CE6327HTSA1 111,588
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    Diotec Semiconductor AG BC859CW

    TRANS PNP 30V 0.1A SOT-323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC859CW Bulk 3,000
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    Mouser Electronics BC859CW 11,037
    • 1 $0.14
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    • 100 $0.083
    • 1000 $0.058
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    onsemi BC859CMTF

    TRANS PNP 30V 0.1A SOT-23-3
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    DigiKey BC859CMTF Reel
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    Find more BC859C price and stock on Findchips.com

    BC859C Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC859C Continental Device India Silicon Planar Epitaxial Transistors, SOT-23 Original PDF
    BC859C Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BC859C Fairchild Semiconductor Switching and Amplifier Applications Original PDF
    BC859C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    BC859C General Semiconductor Small Signal Transistors (PNP) Original PDF
    BC859C Infineon Technologies PNP Silicon AF Transistor Original PDF
    BC859C Infineon Technologies SOT23 package Original PDF
    BC859C Philips Semiconductors PNP general purpose transistors Original PDF
    BC859C Siemens NPN Silicon AF Transistor Original PDF
    BC859C Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF
    BC859C ITT Semiconductors PNP Silicon Epitaxial Planar Transistor Scan PDF
    BC859C Motorola European Master Selection Guide 1986 Scan PDF
    BC859C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BC859C Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BC859C National Semiconductor Pro Electron Surface Mount Bipolar Devices Scan PDF
    BC859-C National Semiconductor Bipolar Pro Electron Series Scan PDF
    BC859C STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BC859C Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    BC859C,215 NXP Semiconductors PNP general purpose transistors - Complement: BC849C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BC859C,235 NXP Semiconductors PNP general purpose transistors - Complement: BC849C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF

    BC859C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC859

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
    Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration


    OCR Scan     		BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC860C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33 PDF

    BC857

    Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
    Text: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C


    Original     		BC856 BC858 BC860 BC856A3A BC857 BC859 BC858C3L BC846 BC856BZ3B BC857 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A PDF

    Untitled

    Abstract: No abstract text available
    Text: BC859CR Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		BC859CR Freq150M PDF

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE POWER 30/45/65 Volts 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices:BC846W/BC847W/BC848W/


    Original     		BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC856AW PDF

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices : BC846AW/BC847AW/BC848AW/


    Original     		BC856AW BC859CW 100mA BC846AW/BC847AW/BC848AW/ BC849BW 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC856AW PDF

    BCB60

    Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
    Text: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE


    OCR Scan     		OT-23 350mW BC858B BC558B BC858C BC558C BC859 BC559 BC859A BCS59A BCB60 transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk PDF

    Untitled

    Abstract: No abstract text available
    Text: BC859CW Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.420 h(FE) Max. Current gain.800


    Original     		BC859CW Freq100M PDF

    Untitled

    Abstract: No abstract text available
    Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    OCR Scan     		BC859 BC860 BC859 BC859A BC859B BC859C BC860A BC860B BC860C PDF

    13c MARKING

    Abstract: marking code 5y CMSH3-40 MARKING CODE 8Y CMZ5936B marking code c20a marking wc 8N Marking code CS CGDM marking code 4A
    Text: Marking codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 1 A BC846A 4B BC859B 8 AC CMSZ5226B 1 A8 CMSZ5250B 4C BC859C 8 B1 CMSZ5222B 1 B BC846B 4E BC860A 8 BC CMSZ5227B 1 B8 CMSZ5251B 4F BC860B 8 C1 CMSZ5223B 1 C8 CMSZ5252B


    OCR Scan     		BC846A CMSZ5250B BC846B CMSZ5251B CMSZ5252B CMSZ5253B BC847A CMSZ5254B BC847B CMSZ5255B 13c MARKING marking code 5y CMSH3-40 MARKING CODE 8Y CMZ5936B marking code c20a marking wc 8N Marking code CS CGDM marking code 4A PDF

    marking code nt amplifier

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE POWER 30/45/65 Volts 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices : BC846AW/BC847AW/BC848AW/


    Original     		BC856AW BC859CW 100mA BC846AW/BC847AW/BC848AW/ BC849BW 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC856AW marking code nt amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 i Pin configuration


    OCR Scan     		BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC860C PDF

    200mWatts

    Abstract: transistor 56B marking
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC IEC61249 OT-323, MIL-STD-750, BC856AW 200mWatts transistor 56B marking PDF

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC OT-323, MIL-STD-750, BC856AW BC856BW PDF

    BC859 smd

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E


    Original     		OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC859 smd BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC859C Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m


    Original     		BC859C Freq100M PDF

    Untitled

    Abstract: No abstract text available
    Text: BC859CL Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		BC859CL Freq100M req100M PDF

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2010-REV PDF

    BC859

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F


    Original     		ISO/TS16949 OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PDF

    BC860

    Abstract: BC859 BC859A BC859B BC859C BC860A BC860B BC860C
    Text: CDU BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    OCR Scan     		BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC860C BC860 BC859 BC859A BC859B BC859C BC860A BC860B BC860C PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A - 4A BC859B = 4B BC859C - 4C BC860 = 4H BC860A ss 4E PACKAGE OUTLINE DETAILS ALL DIM ENSIO NS IN m m BC860B = 4F BC860C = 4G Pin configuration 1 a BASE 2 = EMITTER 3 « COLLECTOR


    OCR Scan     		BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PDF

    BC558A

    Abstract: 2N44Q3 bc327-16 bc558c BC556A 2N4401 surface mount BC337 sot23 BC556B SOT23 BC338-16 MP8A06
    Text: S M A L L SIGNAL BIPOLAR TRANSISTORS PACKAGE Leaded Surface Mount Device TO-92 (SOT-23) # % hFE Veto (Voli) NPN PNP NPN PNP lc (mA) Low Noise BC549B BC559B BC849B BC859B 100 330 30 BC549C BC559C BC849C BC859C 100 600 2N4124 2N4126 Switchino 25 30 40 max.


    OCR Scan     		OT-23) BC549B BC549C 2N4124 BC559B BC559C 2N4126 BC849B BC849C BC859B BC558A 2N44Q3 bc327-16 bc558c BC556A 2N4401 surface mount BC337 sot23 BC556B SOT23 BC338-16 MP8A06 PDF

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


    Original     		2002/95/EC. PMBTA42 PMEG3005EL PMEG6010EP PMR780SN PTVS12VS1UR PZU13y PMBTA42DS PMEG3005ET PMEG6010ER prtr5v0u6s csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY PDF

    transistor 2N3906 smd 2A SOT23

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
    Text: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709


    Original     		BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 transistor 2N3906 smd 2A SOT23 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094 PDF

    bcp55 to

    Abstract: bcp55 BCV72-K8 BC859C BC860C BCP52 BCP53 BCP54 BCP56 BCV26
    Text: This I Material cr tn ab Pro Electron Surface Mount Bipolar Devices -1 fc-1 UJ CD Copyrighted a□ jr □ In nj -c: ru j] Device No. SOT-23 Mark I ' ces * 'CBO v h fe V CB (nA) Max (V) hfe Min @ Max 'c & VcE (mA) (v) V GE(SAT) & Max BE(SAT) . w V BE(ON)


    OCR Scan     		OT-23 BC859C O-236 BC860C BCP52 O-261 BCV26 BCV27 bcp55 to bcp55 BCV72-K8 BC859C BC860C BCP53 BCP54 BCP56 BCV26 PDF