BC212* TRANSISTOR Search Results

BC212

Abstract: BC212B BC213 equivalent of transistor bc212 BC212BRL1 BC212BZL1
Contextual Info: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO BC212 BC213 Emitter-Base Voltage Vdc 3 EMITTER –60 –45

bc212

Abstract: bc213
Contextual Info: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC212 BC213 Collector-Base Voltage BC212 BC213 Emitter-Base Voltage VCEO VCBO Value Vdc Vdc 3 EMITTER −60 −45 −5.0 Vdc Collector Current − Continuous

BC212

Abstract: BC214 BC214RL1 BC214 pin out bc212b equivalent bc213 equivalent equivalent of transistor bc212 BC212B BC212BRL1 BC212BZL1
Contextual Info: BC212, BC212B, BC213, BC214 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 BC214 Collector-Base Voltage Vdc –50 –30 –30 3 EMITTER VCBO BC212 BC213 BC214 Emitter-Base Voltage

BC212

Abstract: BC213 bc212b
Contextual Info: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO Vdc 3 EMITTER –60 –45 VEBO –5.0 Vdc Collector Current – Continuous

equivalent of transistor bc212

Abstract: bc213 equivalent bc212 replacement equivalent of transistor bc214 transistor bc214 2n441 BC237 BC212 FR4 dielectric constant 4.6 BC214 alternative
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC212 BC213 BC214 Unit Collector – Emitter Voltage VCEO –50 –30 –30 Vdc Collector – Base Voltage

equivalent of transistor bc212 bc 214

Abstract: BC212 BC212B BC213 BC214 pin out bc212b equivalent BC214 BC 213 Motorola
Contextual Info: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 212 BC 213 BC 214 Unit Collector – Emitter Voltage VCEO –50 –30 –30

BC182L complementary

Abstract: BC212L BC182 BC212 8C132 BC182L 1C10
Contextual Info: BC182 BC182L BC212 BC212L //SJSJW/SStMfS/S&SSSS/SSSSr/fS/f'SS.'SSSSS/.'YS* D E S C R IP T IO N The B C 182, BC1S2L NPN & BC212, BC212L (PNP) ÍH are complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as

cbc212

Abstract: KSS 213 BC212 BC214 BC214 pin out kss 213 b kss 213 c BC212B kss 210 BC213
Contextual Info: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B BC213 BC214 PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Collector-Em itter Voltage Symbol BC 212 BC 213 BC 214 Unit VCEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage

bc213b

Abstract: c214 bc214 C2-14 c212 BC214B BC213
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors BC212,B BC213 BC214 PN P S ilicon C O L LE C T O R 3 1 EM ITTER MAXIMUM RATINGS Sym bol BC212 BC213 BC214 Unit C ollector-Em itter Voltage Rating VCEO -5 0 -3 0 -3 0 Vdc C o lle c to r-B a s e Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC212 TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

equivalent of transistor bc212

Abstract: BC212 data BC212 Transistor BC212 bc212* transistor
Contextual Info: BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage

Transistor BC212B

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE

BC212

Abstract: TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 2 3 C B E 0.135 - 0.145

BC214C

Abstract: Transistor BC212A BC212A BC214B Transistor BC212 BC214 pin out Transistor BC214c BC214C equivalent BC213A transistor bc212 sheet
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C TO-92 Plastic Package Silicon Small Signal General Purpose Amplifier

bc212b

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.35 Collector current ICM : -0.1 Collector-base voltage V BR CBO : -60 TO—92 W （Tamb=25℃） 1. EMITTER

BC182 BC547

Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328

Contextual Info: TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE 3. COLLECTOR -60 V 1 2 3 Operating and storage junction temperature range

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

Contextual Info: BC212 SEMICONDUCTOR _ TECHNICAL DATA PN P EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR A B SO LU TE M A X IM U M R A T IN G S a t T a n * = 2 5 4C Sym bol R atin g C h aracteristic U nit Collector-Base Voltage V cbo -60 V Collector-Emitter Voltage V ceo

BCI82

Abstract: BC212L BC212L complementary BC182 bc182l BCI82L BC21 BC212 NPN ECB
Contextual Info: l/ K U DESCRIPTION The B C 182, B ' i 82L (N PN & BC212, B C 212L (PN P) are complem entary silicon planar epitaxial transistors for use in A F small signal amplifiers and drivers, as well as for low power universal applications. Both types feature good linearity o f D C current gain.

bc558c

Abstract: BC212
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t

bc212

Abstract: cbc212 BC213 BC214 MOTOROLA
Contextual Info: BC212,B BC213 BC214 MAXIMUM RATINGS Symbol BC BC BC 212 213 214 Collector-Emitter Voltage v CEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage v CBO -6 0 -4 5 -4 5 Vdc Emitter-Base Voltage Rating Unit v EBO -5 .0 Vdc Collector Current — Continuous !C -1 00 mAdc

BC212

Abstract: BC212 data BC214 BC213 BC212B BC307 BC 212 BC 213 Motorola
Contextual Info: BC212,B BC213 BC214 M AXIM UM RATINGS Symbol BC BC BC 212 213 214 VcEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage VcBO -6 0 -4 5 -4 5 Vdc Emitter-Base Voltage Vebo ic -5.0 Vdc -100 mAdc Total Device Dissipation @ T/^ = 25°C Derate above 25°C Pd 350 2.8 mW

BC212C

Abstract: Transistor BC212 BC212
Contextual Info: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e