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    Microchip Technology Inc 2N2222AUBC

    Bipolar Transistors - BJT 50 V Small-Signal BJT
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    Microchip Technology Inc JANSR2N2222AUBC

    Bipolar Transistors - BJT 50 V RH Small-Signal BJT
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    Microchip Technology Inc JANS2N2222AUBC

    Bipolar Transistors - BJT 50 V Small-Signal BJT
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    Microchip Technology Inc JANSH2N2222AUBC

    Bipolar Transistors - BJT 50 V RH Small-Signal BJT
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    Microchip Technology Inc 2N2222AUBC/TR

    Bipolar Transistors - BJT 50 V Small-Signal BJT
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    BC 2N2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222A

    Abstract: No abstract text available
    Text: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-28 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92


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    PDF PN2222A 2N2222A UL94V-0 PN2907A 2N2907A 2N2222A

    2N2222A plastic

    Abstract: 2N2222A TO-92 2N2907A plastic 2n2222a transistor 2N2907A TO-92 Transistor 2N2222A transistor 2n2222a data sheet to-92 2n2222a to 92 PN2222A 10D3
    Text: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-17 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW


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    PDF PN2222A 2N2222A UL94V-0 PN2907A 2N2907A 2N2222A plastic 2N2222A TO-92 2N2907A plastic 2n2222a transistor 2N2907A TO-92 Transistor 2N2222A transistor 2n2222a data sheet to-92 2n2222a to 92 10D3

    Untitled

    Abstract: No abstract text available
    Text: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW


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    PDF PN2907A 2N2907A UL94V-0 PN2222A 2N2222A

    PN2907A

    Abstract: 2N2907A 2N2907A die 10D3 2N2222A PN2222A 2n2222a to 92 TO-92 Gehause 2N2907A plastic
    Text: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW


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    PDF PN2907A 2N2907A UL94V-0 PN2222A 2N2222A 2N2907A 2N2907A die 10D3 2N2222A 2n2222a to 92 TO-92 Gehause 2N2907A plastic

    FSD200

    Abstract: fairchild 1N4007 1N4007 definitions bc 2N2222 470nF 400v polyester EER1616 2N2222 2N2222 fairchild function of 1n4007 F-400V
    Text: www.fairchildsemi.com AB-32 Battery Charger Applications BC-3.5W-FSD200 – 3.5 Watts Application FPS Device Input Voltage Range Rated Output Power Battery Charger FSD200 85–265 Vac 3.5W Output Voltage Rated Current 5.2V (0.65A) Features • No bias winding for cost reduction


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    PDF AB-32 W-FSD200 FSD200 250VAC 1N4007 85VAC~ 265VAC FSD200 fairchild 1N4007 1N4007 definitions bc 2N2222 470nF 400v polyester EER1616 2N2222 2N2222 fairchild function of 1n4007 F-400V

    EER1616

    Abstract: 1N4007 definitions 2n2222 fairchild FSDH0165 47uf 400v 4.7uF 400V fairchild 1N4007 PC817A function of 1n4007 of D2 1N4007
    Text: www.fairchildsemi.com AB-34 Battery Charger Applications BC-3.5W-FSDH0165 – 3.9 Watts Application FPS Device Input Voltage Range Rated Output Power Battery Charger FSDH0165 85–265 Vac 3.9W Output Voltage Rated Current 5.2V (0.75A) Features • Low power consumption in the standby (under 0.25W at 240 Vac input)


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    PDF AB-34 W-FSDH0165 FSDH0165 1N4007 SB260 EER1616 100nF EER1616 1N4007 definitions 2n2222 fairchild FSDH0165 47uf 400v 4.7uF 400V fairchild 1N4007 PC817A function of 1n4007 of D2 1N4007

    FSD210

    Abstract: EER1616 AB-33 FSD210 dip-8 2N2222 4.7uF 400V FSD210 equivalent KA431 application H11A817A FSD210 8-pin
    Text: www.fairchildsemi.com AB-33 Battery Charger Applications BC-3.5W-FSD210 – 3.5 Watts Application FPS Device Input Voltage Range Rated Output Power Battery Charger FSD210 85–265 Vac 3.5W Output Voltage Rated Current 5.2V (0.65A) Features • Low power consumption in the standby (under 0.1W at 240 Vac input)


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    PDF AB-33 W-FSD210 FSD210 250VAC EER1616 SB260 FSD210 EER1616 FSD210 dip-8 2N2222 4.7uF 400V FSD210 equivalent KA431 application H11A817A FSD210 8-pin

    tba820m

    Abstract: tda7231 TDA7231 datasheet TDA7231 equivalent 3.579MHz crystal XTAL TBA820M equivalent 1N4148 2N2222 LS04 TS7514
    Text: APPLICATION NOTE A VERY LOW COST AND POWERFUL SOLUTION FOR V.23 APPLICATION : TS7514 by O.LEENHARDT - R. GIRARD SUMMARY Page 1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 2.1


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    PDF TS7514 tba820m tda7231 TDA7231 datasheet TDA7231 equivalent 3.579MHz crystal XTAL TBA820M equivalent 1N4148 2N2222 LS04 TS7514

    3.579MHz crystal XTAL

    Abstract: of DTMF Proximity Detector 3.579MHz crystal bc 036 10uf capacitor crystal oscillator clock 3.579MHZ ts7514 PLCC28 TS7514CFN TS7514CP
    Text: TS7514 PROGRAMMABLE V.23 MODEM WITH DTMF . . . . . PROGRAMMABLE MODES : - Modem 75bps transmit, 1200bps receive - Modem 1200bps transmit, 75bps receive - DTMF dialing - Call status tone detection - Auxiliary analog transmit input - Analog test loopback


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    PDF TS7514 75bps 1200bps 579MHz) DIP24 PLCC28 3.579MHz crystal XTAL of DTMF Proximity Detector 3.579MHz crystal bc 036 10uf capacitor crystal oscillator clock 3.579MHZ ts7514 PLCC28 TS7514CFN TS7514CP

    of DTMF Proximity Detector

    Abstract: 3.579MHz crystal XTAL SGS-THOMSON modem ts7514 PLCC28 TS7514CFN TS7514CP
    Text: TS7514 PROGRAMMABLE V.23 MODEM WITH DTMF . . . . . PROGRAMMABLE MODES : - Modem 75bps transmit, 1200bps receive - Modem 1200bps transmit, 75bps receive - DTMF dialing - Call status tone detection - Auxiliary analog transmit input - Analog test loopback


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    PDF TS7514 75bps 1200bps 579MHz) TS7514 of DTMF Proximity Detector 3.579MHz crystal XTAL SGS-THOMSON modem PLCC28 TS7514CFN TS7514CP

    of DTMF Proximity Detector

    Abstract: TS7514 525Hz 3.579MHz crystal XTAL PLCC28 TS7514CFN TS7514CP 2N2222 n CHANNEL dmtf generator 150Hz Low pass filter circuit
    Text: TS7514 PROGRAMMABLE V.23 MODEM WITH DTMF . . . . . PROGRAMMABLE MODES : - Modem 75bps transmit, 1200bps receive - Modem 1200bps transmit, 75bps receive - DTMF dialing - Call status tone detection - Auxiliary analog transmit input - Analog test loopback


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    PDF TS7514 75bps 1200bps 579MHz) TS7514 of DTMF Proximity Detector 525Hz 3.579MHz crystal XTAL PLCC28 TS7514CFN TS7514CP 2N2222 n CHANNEL dmtf generator 150Hz Low pass filter circuit

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177

    2N4036 g1

    Abstract: BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF BC548B BC548C BC549B BC549C BC108A BC108B BC108C BC109B BC109C ZTX300 2N4036 g1 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88

    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


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    PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


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    PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    THC3251A

    Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro


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    PDF SG433a 2N918 THC918 2N2222A THC2222A 2N2369 THC2369 2N2484 THC2484 2N2907A THC3251A pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE

    C495 transistor

    Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


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    PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


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    PDF 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    bc5478

    Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
    Text: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L


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    PDF BZV49-C10 BZV85-C10 BZV49-C11 BZV85-C11 BZV49-C12 S0T89 BZV85-C12 BZV49-C13 BZV85-C13 bc5478 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


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    PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode