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    BC 238 TRANSISTOR Search Results

    BC 238 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 238 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC238B

    Abstract: BC237 BC239 BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA
    Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25


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    PDF BC237/D BC237 BC238B BC239 BC237/D* BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA

    TRANSISTOR 237b

    Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


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    PDF BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b

    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


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    PDF SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369

    bc 357 transistor

    Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
    Text: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver


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    PDF CB-76 bc 357 transistor transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC

    BC308

    Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
    Text: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN


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    PDF flE35bD5 004155b Q62702-C703 Q62702-C283 Q62702-C324 Q62702-C704 Q62702-C285 Q62702-C286 Q62702-C393 Q62702-C705 BC308 bc307 siemens BC307 bc307a BC 309 BC307B BC 307 BC309C bc 374

    T092A

    Abstract: transistors BC 459
    Text: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC


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    PDF T0-92a O-92a O-126 T092A transistors BC 459

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


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    PDF BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330

    BC238

    Abstract: transistor bc237 bc337 BC237 BC239 transistor bc238 Transistor bc239 BC238 NPN transistor
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237


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    PDF BC237/238/239 BC239 BC237 BC238/239 BC238 transistor bc237 bc337 BC237 BC239 transistor bc238 Transistor bc239 BC238 NPN transistor

    BC238B

    Abstract: BC239 BC237A BC238 BC237 bc237v
    Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25


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    PDF BC237/D BC237 BC238B BC239 O-226AA) BC237A BC238 bc237v

    TRANSISTOR BC 239 F

    Abstract: transistor BC 238
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • LO W N OISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237


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    PDF BC237/238/239 BC239 BC237 TRANSISTOR BC 239 F transistor BC 238

    BC238

    Abstract: 238C BC239 25CC BC237 BC237A BC307 BC308C JE125 BC239C
    Text: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S S ym b o l R a tin g BC BC BC U n it 237 238 239 Co Ilector-E m itter Voltage VCEO 45 25 25 Vdc C o lle cto r-E m itte r Voltage VCES 50 30 30 Vdc Vebo 6.0 5.0 5.0 Vdc Em itter-Base Voltage CASE 29-04, STYLE 17


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    PDF BC237 BC238 BC239 O-226AA) BC307 BC308C BC309B 238C 25CC BC237A JE125 BC239C

    TR BC 237 B

    Abstract: TR BC 238 C238B 239 BC bc237v
    Text: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S R a tin g Sym bol U n it BC BC BC 237 238 239 C o llecto r-E m itte r Voltage VCEO 45 25 25 C olle cto r-E m itte r Voltage VCES 50 30 30 Vdc vebo 6.0 5.0 5.0 Vdc E m itter-Base Voltage Vdc CASE 29-04, STYLE 17


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    PDF BC237 BC238 BC239 O-226AA) BC239 TR BC 237 B TR BC 238 C238B 239 BC bc237v

    bc237 siemens

    Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
    Text: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC


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    PDF flS35bQS G041540 Q62702-C697 Q62702-C276 Q62702-C277 Q62702-C698 Q62702-C278 Q62702-C279 Q62702-C280 Q62702-C699 bc237 siemens BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239

    transistors BC 183

    Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200


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    PDF CB-76 transistors BC 183 TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A

    BC183A

    Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
    Text: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B


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    PDF CB-76 BC317P. BC183A BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B

    BF-139

    Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
    Text: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2


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    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    transistor bc 238 b

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W N OISE: BC309 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


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    PDF BC307/308/309 BC309 BC307 transistor bc 238 b

    fr 309

    Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
    Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen


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    PDF BC179 fr 309 BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    amd 2904

    Abstract: BC237A BC239 BC237B BC237 BC238B BC238 238B BC239C
    Text: l°ft! BC237,A,B,C BC238,B,C BC239,C M AXIM UM RATINGS R a tin g Sym bol BC BC BC 237 23 8 23S U n it C o tlecto r-E m itte r Voltage VCEO 45 25 25 Vdc C o lte c to r-E m itte r Vo ltage VCER 50 30 30 Vdc E m itter-B ase Voltage Vebo 6 .0 5 .0 5 .0 Vdc CASE 29-04, STYLE 17


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    PDF BC237 BC238 BC239 O-226AA) amd 2904 BC237A BC237B BC238B 238B BC239C

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    BC238

    Abstract: bc177-vi bc140 1012C 026 pnp
    Text: AF transistors Type Group A B BC 108 A B C B C BC 140 uCBO f j I q and 45 45 300 300 10 10 2 2 5 5 < 10 <10 20 20 20 300 300 300 10 10 10 110-220 200-450 110-220 200-450 420-800 2 2 2 5 5 5 20 20 300 300 10 10 200-450 420-800 2 2 5 5 £10 £10 £ 10 £4 £4


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