FLE35BD5 Search Results

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: SIEMENS Magnetic Fieldprobe FH 301-40 Features • High sensitivity • Low TC of sensitivity and internal resistance • Very flat ceramic package with wire leads Typical applications • • • • • • • • • Proximity switches Brush less DC motor

TBB212

Abstract: TBB212AG tbb202 TBB212A CMOS divider 10 100 1000 stb CIRCUIT DIAGRAM Siemens Frequency Divider TBB 202
Contextual Info: SIEMENS Dual-Modulus Divider 1:128/129 for 1 GHz with Standby Operation TBB 202 Preliminary Data Bipolar 1C Features • High Frequency Operation:/max = 1100 MHz • Pulse Swallow Function: 128/129 • Low Power Supply current: 8.5 mA typ. • Stable Output Amplitude:

BMS404

Contextual Info: S IEM EN S ISDN D-Channel Exchange Controller IDEC PEB 2075 CM OS 1C 1 • • • • • • • • • • • • • Features Four independent HDLC channels 64-byte FIFO storage per channel and direction Handling of basic HDLC functions flag detection/generation

Contextual Info: SIEMENS BUP 200 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 200 D V'CE h 1200V 3.6A Pin 1 Pin 2 Pin 3 G C E Package

sy 320 diode

Contextual Info: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vbs 500 V b ^DS on Package Ordering Code 4.5 A 1.5 Í2 TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss EHA0702D Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343

Contextual Info: fl2 3 S b 0 5 0 0 f ll0 7 f l ESO SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515A / 83C515A-5 Preliminary SAB 83C515A-5 SAB 80C515A • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM

24C04 wp

Abstract: IA 942 EEprom program eeprom 24c04 6 Q67100-H3525 Q67100-H3526 Q67100-H3527 Q67100-H3531 Q67100-H3532 DAT200 of eeprom 24c04
Contextual Info: • û235bG5 OO^Ô^bM 1 3 3 SIEM ENS 4 K bit 512 x 8 bit Serial C M O S E E P R O M s, I 2C Synchro n o us 2-W ire Bus, Page Protection Mode SLx 24C 04/P Preliminary Features • Data EEPROM internally organized as 512 bytes and 32 pages x 16 bytes • Page protection mode, flexible page-by-page

neosid v6

Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Contextual Info: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page

Contextual Info: SIEMENS B A S 140W Silicon Schottky Diode • • • • General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type BAS 140W Pin Configuration Ordering Code tape and reel 1 2 Q62702-A1071 A C

Contextual Info: SPP 47N10 P relim in ary Data SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode • Avalanche rated Drain source voltage ^DS Drain-Source on-state resistance RDS on Continuous drain current b 100 V 0.033 n 47 A • d v/d i rated

m43of

Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version

BSM25GB120D

Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Contextual Info: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge

BCW61A

Contextual Info: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking

Contextual Info: • Ô235b05 0 0 ^ 6 ^ 4 133 SIEM ENS 4 K bit 512 x 8 bit S erial CM O S E E P R O M s, I 2C Syn ch ron o u s 2-W ire Bus, Page P rotection Mode SLx 24C 04/P Preliminary Features • Data EEPROM internally organized as 512 bytes and 32 pages x 16 bytes

Contextual Info: SIEMENS Preliminary IC-SPECIFICATION TDA 6060XS, TDA 6060G Multistandard Modulator / PLL gage 1 Contents 2 Functional Description, Application Pin Definition and Function 3 4 Block Diagram Circuit Description 5-10 11 Pinning, Package 12 Absolute Maximum Ratings

q1257

Abstract: D1557 MARKING DIAGRAMS sob 214 intel schematics 150N150A intel 80386 SL MARKING CODE CKQ TI e7f01 J027 TDA 2035
Contextual Info: SIEM ENS Multichannel Network Interface Controller for HDLC MUNICH32 PEB 20320 CMOS 1C Version 3.4 1.1 Features • Serial Interface - Up to 32 independent communication channels. - Serial multiplexed full duplex input/output for 2048-, 4096-, 1544- or 1536-Kbit/s PCM

SOT-23 marking 717

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general AF applications High collector current High current gain Complementary types: BCV 27, BCV 47 NPN Type Marking Ordering Code (tape and reel) PinC‘onfigur ation 1 2 3 Package1)

B23SL

Abstract: smd transistor 718
Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Bipolar 1C Features • • • • • • • • • • • • • • Output voltage tolerance < + 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 807 BC 808 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfigur ation

RXTNB 2

Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9

Contextual Info: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321000S/GS-50/-60 Advanced Inform ation • 1 048 576 words by 32-bit organization (alternative 2 097 152 w ords by 16-bit) • Fast access and cycle tim e 50 ns access time 90 ns cycle tim e (-50 version)