BAW62
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION
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M3D176
BAW62
DO-35)
BAW62
MAM246
MAM246
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BAW62
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package
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M3D176
BAW62
DO-35)
BAW62
MAM246
MAM246
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BAW62
Abstract: transistor BAW62 MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION
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M3D176
BAW62
DO-35)
BAW62
transistor BAW62
MAM246
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PM7520
Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Text: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION
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BLW32
BLW33
ECO7806
PM7520
RESISTOR CR25
RESISTOR pr37
RESISTOR CR25 philips
CR25 resistor
PM3260
HP8620
PR37 RESISTOR
blw32 s parameter
philips resistor CR25
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ic TDA7021T
Abstract: TDA7050T BAW62 MS-012AA TDA7021T TDA7040T
Text: INTEGRATED CIRCUITS DATA SHEET TDA7040T Low voltage PLL stereo decoder Product specification File under Integrated Circuits, IC01 September 1986 Philips Semiconductors Product specification Low voltage PLL stereo decoder TDA7040T GENERAL DESCRIPTION The TDA7040T is a monolithic integrated circuit for low cost FM stereo radios with an absolute minimum of peripheral
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TDA7040T
TDA7040T
ic TDA7021T
TDA7050T
BAW62
MS-012AA
TDA7021T
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BAS316 equivalent
Abstract: Zener Diodes 300v BAS16-03W BAS125 BAS40 equivalent bav20 BAS316 / BAS16-03W 1SS376 bas16 cross reference 1PS301
Text: Philips Semiconductors Small-signal Transitors and Diodes Cross Reference Diodes PHILIPS GA DIODES CROSS-REFERENCE Schottky diodes COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER BAS125 BAT54 BAS70-06W BAS125-04 BAT54S
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BAS125
BAT54
BAS70-06W
BAS125-04
BAT54S
BAS70-07
BAS125-04W
BAT54SW
BAT17
BAS316 equivalent
Zener Diodes 300v
BAS16-03W
BAS125
BAS40
equivalent bav20
BAS316 / BAS16-03W
1SS376
bas16 cross reference
1PS301
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TDA7021T
Abstract: TDA7040 BAW62 MS-012AA TDA7040T TDA7050T
Text: 34 .80 7IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.
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NF-2000
Abstract: BAW62 BSH112 PIP250M HVQFN68
Text: PIP250M Integrated buck converter An innovative solution for Point of Load POL regulators Philips new PIP250M single-phase DC/DC synchronous buck converter integrates five component functionalities in a single package.This innovative multi-chip module provides
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PIP250M
NF-2000
BAW62
BSH112
HVQFN68
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BAW62
Abstract: 1970 oscilloscope T0309 T-03-09
Text: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA
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BAW62
DO-35
OD-27
DO-35)
1970 oscilloscope
T0309
T-03-09
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diode rj 93
Abstract: No abstract text available
Text: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage
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DQ2b352
BAW62
DO-35
BAW62
OD-27
DO-35)
7Z10519
D02b35e
diode rj 93
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BAW62
Abstract: No abstract text available
Text: • bbSB'IBl DD2b352 40b « A P X N AMER PHILIPS/DISCRETE BAW62 blE D HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage
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DD2b352
BAW62
DO-35
BAW62
OD-27
DO-35)
7Z66863
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BAV105
Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30
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DO-35
DO-34
OD123
OD80C
OD110
OT143
OT323/
BAW62/
BAV21
BAV10
BAV105
BAS561
Diode BAx
1PS181
1PS184
1PS193
1PS226
philips 1n4148 DIODE
"Philips Semiconductors" BAX DO-35
Diode BAX 12
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MLA428-1
Abstract: BAW62
Text: Philips Semiconductors Product specification High-speed diode BAW62 FEA TU R E S D E S C R IP T IO N • Hermetically sealed leaded glass S O D 27 D O -35 package The BAW 62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass S O D 2 7 (D O -35)
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BAW62
DO-35)
BAW62
MLA428-1
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pm2222a
Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT
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BA582
OD123
BA482
BA682
BA683
BA483
BAL74
BAW62,
1N4148
pm2222a
SOD80C PHILIPS
BCB47B
1N4148 SOD80C
PMBTA64
PXTA14
BF960
FET BFW11
BF345C
BC558B PHILIPS
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SOT23 marking A7p
Abstract: A7P DIODE a7p marking marking code A7p marking A7p bav99 a7p marking code a7p marking sot23 73b diode A7p marking code diode A7p
Text: 7110fl2b G 0 b Ä 3 3 3 73b PHIN BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES ] The BAV99 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high-speed switching in thick and thin-film circuits.
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7110fl2b
BAV99
MLB390
SOT23 marking A7p
A7P DIODE
a7p marking
marking code A7p
marking A7p
bav99 a7p marking code
a7p marking sot23
73b diode
A7p marking code
diode A7p
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BAL99
Abstract: Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE
Text: • Philips Sem iconductors . ^ bbSBTBl aaaMESM 513 H A P X _ _ — N AflER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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bbS3T31
BAL99
S3131
00242Sfl
BAW62
BAL99
Philips MBB
BAW62 sot23
BAW62 PH
philips diode PH 15
ir 222
BAW62
D0242
LF MARKING CODE
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Untitled
Abstract: No abstract text available
Text: bhsa^ai QQ242S4 S13 • APX Philips Semiconductors — — N AMER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications.
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OCR Scan
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QQ242S4
BAL99
7Z690B6
BAW62
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAL99 QUICK REFERENCE DATA PARAMETER
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BAL99
Z690M
BAW62
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Untitled
Abstract: No abstract text available
Text: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.
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OCR Scan
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bb53c
BAS16
BAW62;
7Z65148
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Untitled
Abstract: No abstract text available
Text: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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OCR Scan
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002432b
BAS678
243pF
J10MO
7Z73212
7Z69086
BAW62
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PDF
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Philips fr 153 30
Abstract: No abstract text available
Text: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.
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bbS3T31
BAS56
BAS56
1Z73J12
BAW62
Philips fr 153 30
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PDF
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Untitled
Abstract: No abstract text available
Text: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55
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BAS55
bbS3131
7Z690B61
BAW62
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Untitled
Abstract: No abstract text available
Text: • bbSBSBl 0054276 T57 H A P X N AUER PHILIPS/DISCRETE BAS28 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes.
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BAS28
BAS28
BAW62;
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Untitled
Abstract: No abstract text available
Text: b b S S ' m 0024363 2T5 « A P X N AMER PHILIPS/DISCRETE BAV105 b?E D J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage
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BAV105
OD80C
oo343f
7ZI0677
00243AT
100iL
400mA
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