MC0603B473M500CT
Abstract: pf 4000 MC0603B683K500CT MC0603B104K500 MC0603F104Z250CT MC0603F104Z500CT
Text: RoHS Compliant Tape & Reel Dimension Capacitor Dimension L mm W (mm) MB 1.60±0.10 0.80±0.10 0.40±0.15 NO. 1 2 3 4 5 Name NPO/X7R Ceramic material Inner electrode Inner layer Termination Middle layer Outer layer X7R/X5R/Y5V BaTiO3 based AgPd alloy Ni Ag
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MC0603B102K101CT
MC0603B102K500CT
MC0603B102M101CT
MC0603B102M500CT
MC0603B103K160CT
MC0603B103K250CT
MC0603B473M500CT
pf 4000
MC0603B683K500CT
MC0603B104K500
MC0603F104Z250CT
MC0603F104Z500CT
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TRANSISTOR D 471
Abstract: pt sensors 100C
Text: THERMAL SENSORS / CIRCUIT PROTECTORS THERMAL SENSORS PTC THERMISTOR PT 72 STRUCTURE 1 2 3 4 Thermistor BaTiO3 Inner Electrode (Ni) Solder plating Protective coat IDENTIFICATION PRODUCT CODE PT 72 COATING COLOR MARKING Black (CT: 70° C) Brown (CT: 80° C)
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D-25578
TRANSISTOR D 471
pt sensors
100C
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Untitled
Abstract: No abstract text available
Text: June 2013 Passive components sales offices ● Head office Philippines Plant Philippines Block No.5, Calamba Premiere International Park, Batino, Calamba, Laguna, Manila, Philippines 4027 Te l:+63 - 49- 545- 0422 E-mail:donna@samsung.com 206, Cheomdansaneop Road,
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QC080000
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Gasableiter Siemens
Abstract: No abstract text available
Text: SMD-PTC gegen Überstrom Kaltleiterschutz fürs Telefon Kaltleiter oder PTC-Widerstände bestehen aus dotierter Keramik, die auf dem ferroelektrischen Halbleiter BaTiO3 basiert. Sobald die sogenannte Curie-Temperatur erreicht ist, steigt der Widerstand der polykristallinen Materialien innerhalb
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16-mmmessungen
Gasableiter Siemens
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MC0603X105K250CT
Abstract: No abstract text available
Text: RoHS Compliant Tape & Reel Dimension Capacitor Dimension L mm W (mm) T (mm) MB 1.60±0.10 0.80±0.10 0.80±0.07 0.40±0.15 NO. 1 2 3 4 5 Name X7R/X5R/Y5V Ceramic material BaTiO3 based Inner electrode Inner layer Termination Middle layer Outer layer Ni Cu
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MC0603X824K6R3CT
MC0603X105K6R3CT
MC0603X105M6R3CT
MC0603X106M6R3CT
MC0603X225K6R3CT
MC0603X225M6R3CT
MC0603X105K250CT
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100C
Abstract: No abstract text available
Text: THERMAL SENSORS THERMAL SENSORS PTC THERMISTOR PT72 STRUCTURE 1 2 3 4 Thermistor BaTiO3 Inner Electrode (Ni) Solder plating Protective coat IDENTIFICATION PRODUCT CODE COATING COLOR MARKING PT72 Black (CT: 70° C) Brown (CT: 80° C) Blue (CT: 100° C)
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D-25578
100C
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ATML
Abstract: ats2501 M433-LC M433-mC ATS200 S200 S201 S204 S220 CAN REPEATER CR-21
Text: i ISSUE: 1.3 UPDATE: February 2006 Emerald Square, rue Evariste Galois – Batiment D, 06410 BIOT - FRANCE Tel : +33 0 4.97.21.33.10, Fax: +33.(0)4.97.21.33.11, email : info@one-rf.com ii Proprietary Notice: Copyright One RF Technology 2006 The information in this document is subject to change without notice.
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ECG1088
Abstract: AV73-1 ECG1086
Text: ECG1086 SYNCHRONOUS SEPARATOR, HORIZONTAL AFC, HORIZONTAL OSCILLATOR sem iconductors Bating: 1. 2. 3. 4. 5. 6. 7. 8 .' 9. 10. 11. 12. 13. 14. Vec O ic Output Regulated Voltage Output Capacitor Osc Regulator Input AFC Output Resistor Ground Hor Hold Filter
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ECG1086
15750H,
ECG1088
ECG1088
AV73-1
ECG1086
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POWER DIODE AEI
Abstract: Scans-0017329
Text: 19H4 EDISWAN I9H4 HIGH VACUUM DIO DE Indirectly heated— for High Voltage Power Rectification •<- BATIM3 q 2.5 Heater Voltage volts 1.7 Heater Current (amps) Maximum Mean Anode Current (mA) a(av)max. Maximum Peak Anode Current (mA) a(pk)max. Maximum Peak Inverse Voltage
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Untitled
Abstract: No abstract text available
Text: D S 1710 DALLAS SEMICONDUCTOR PIN ASSIGNM ENT • Converts CMOS RAMs into nonvolatile memories 15 □ • SOIC version is pin compatible with the Dallas Semi conductor DS1210S and DS1610S NV Controllers V bati Ax c 3 14 □ Az c 4 13 □ W EO Ay c 5 12 □
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DS1210S
DS1610S
DS1710
20-PIN
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ECG1068
Abstract: ECG1086
Text: PHILIPS EC G I NC Di 17E ECG1086 SYNCHRONOUS SEPARATOR, HORIZONTAL AFC, HORIZONTAL OSCILLATOR semiconductors Bating: 1. 2. 3. 4. 5. 6. 7. Vec 8 .' 9. 10. 11. 12. 13. 14. 15. 16. Oic Output Regulated Voltage Output Capacitor Osc Regulator Input AFC Output Resistor
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ECG1086
Tb-26
-4CG1086
T-77-07-//
ECG1086
ECG1068
ECG1068
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14J2
Abstract: No abstract text available
Text: W hit HEW LETT L A MP S LEO Technical Data Option 102, 103, 104, 105,106, 107, 108 Features Description * Ideal for PC Board S tatus Indication * Standard 4 E lem ent Configuration * Easy Handling * Easy F lux Removal * Housing M eets UL 94V-0 Flam m ability Bating
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HLMP-1300
14J2
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Untitled
Abstract: No abstract text available
Text: •■■ ' - ' ■- FTE -136-01 -G-CV W iCiW : llllSP Kn^MSBl « *» » » Ss>. w ■>-.»; SPECIFICATIONS Materials: Insulator Material: Choice of post Low p,oh!e heights .067- SI Black Liquid Crystal Polymer Terminal Material: Phosphor Bronze Current Bating:
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1-800-SAMTEC-9
0i8141
65-745-5S55
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Untitled
Abstract: No abstract text available
Text: CD4504BMS ÍH H A R R IS UU S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features • Pinout CD4504BMS TOP VIEW High Voltage Type 20V Bating • Independence of Power Supply Sequence Consider
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CD4504BMS
CD4504BMS
100nA
13BTURE
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Untitled
Abstract: No abstract text available
Text: . " \ : 7 ì “< D r frn 1 REVISION DESCRIPTION CK'D. HCV, BATI •V V- R E F v P r t ï N T ü i 2 3*Î 23^ JTfcí H ¿T/Ç^T 1 3 -7 -6 1 S E E AD0Et> C.AT M O- V A V I Û - Ê â »OJÊ^ P e«L o c - Z o i t i y v L. ' KÍ-H • H D/f\ ?/ -SOS=dDlSlIVW
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SC443II
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usbx2
Abstract: MCHIP SPDIF interface ITER
Text: 1.3 Block Diagram F bating-point unit SFUinsMnfeth¿us Fbus * ir PII flifim niii iT fifim ¿ ^ Fteripteral buso (Mbu&> CPU bus (CPU cb c k ) Peripheral buso om coritrolter Cache controller Ire to c tb n ese te rrerro SKB Cperand ese he rrerroi Hqh-speed on-chip RAM
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Untitled
Abstract: No abstract text available
Text: CERAvtf/7Z" INTRODUCTION 100,000 PTCR TECHNOLOGY PTCR’s Positive Temperature Coefficient Resistors are made from high purity semi-conducting cer amics. Based on complex titanate chemical compositions (BaTiCb, SrTiCb, etc.), their specific perfor mance is created by the addition of dopants and unique processing, including high force pressing into
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ic T M 2313
Abstract: MPS3403
Text: M O T OR OLA SC 12E D I b3b?s5M oaabobñ ^ X S T RS /R F r-X7- S' MPS3403 M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage Vc b o 25 Vdc Vdc Bating Ve b o 5.0 Collector Current — Continuous ic 500 mA Total Device Dissipation @ T>\ = 25°C
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MPS3403
MPS8098
O-226AA)
ic T M 2313
MPS3403
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RATINGS Bating Symbol Value C o lle cto r-E m itte r V o ltage VCEO 60 Vdc C ollector-Base Voltage Vc b o 60 Vdc Em itter-Base V o ltage Ve b o 6.0 Vdc 'c 50 m A dc Sym bol M ax U nit Pd 225 mW 1.8 m W /X r 0JA 556 °c/w Pd 300 mW 2.4 m W /T RflJA
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MMBT2484LT1
OT-23
O-236AB)
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TO206AB
Abstract: No abstract text available
Text: MOTORCLA SC lEE O I XSTRS/R F L3b72S4 Q Of lt iMBl 2 1 ^-S7-Ä3 2NS230" CASE 26-03, STYLE 1 TO-46 TO-206AB M AXIM UM RATINGS Symbol Value Emitter-Collector Voltage Bating V e CO 20 Unît Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage V EBO 30
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L3b72S4
2NS230"
O-206AB)
TO206AB
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Untitled
Abstract: No abstract text available
Text: S P E C IFIC A T IO N S High reiiabilty Tiger Eye contacts Mates with: PCMT Materials: Choice of card thickness Insulator Material: Black Liquid Crystal Polym er C ontact Material: BeCu C urrent bating: 1A Operating Tem p Range: -65 C to *12 5 C Plating: Au or Sn over
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1-800-SAMTEC-9
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1943a
Abstract: 4j to92 2SC3303 2SC3383 2005A 2sc3363 2SA1392 SC3383 u 5601 1804J
Text: Ordering number: EN 1943A 2SA1392/2SC3383 PNP/ NPN Epitaxial Planar Silicon Transistors SAXYO i AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute Maxima Batings at Ta=25°C Collector to Base Voltage CBO Collector to Emitter Voltage vCEO
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2SA1392/2SC3383
2SA1392
2034/2034A
SC-43
7tlt17D7b
1943a
4j to92
2SC3303
2SC3383
2005A
2sc3363
SC3383
u 5601
1804J
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NL10259
Abstract: National Electronics HFC-22 hl national
Text: NL10259 NATIONAL -i.*,*,* PAGE 1 0 F 12 TEST SPECIFICATIONS TYPE : 7/1/92 10/23/89 1,8 ifl 10759-1 Description : Continuous Wave Magnetron, Absolute Ma ximum Bating«: Item Symbol Filament Voltage Ef Pre-heating Time Peak Anode Vo ltage 2450 MHz. Fixed Frequency.
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NL10259
Ib-450
HFC-22
NL10259-3
National Electronics
hl national
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k-band amplifier
Abstract: FMC2122P1-02 CLI14
Text: FMC2I22P1-02 FUJITSU Kit, k - Batid Power GaAs Modules FEATURES • High Output Power: P 1cJB = 21dBm Typ. * High Gain: G1cjb = 12dB(Typ.) ♦ Low In/Out VSWR •Broad Band: 21.2 - 22.4GHz • Impedance Matched ZirVZout = 50Î2 ♦ Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2122P1-02
21dBm
FMC2122P1-02
10dB-n
-WI77T
k-band amplifier
CLI14
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