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    BA 26 701 Search Results

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    BA 26 701 Price and Stock

    MACOM MABA-010268-CT4160

    Audio Transformers / Signal Transformers 1:4 Transmission line transformer on SM-
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MABA-010268-CT4160 1,022
    • 1 $5.39
    • 10 $4.37
    • 100 $3.16
    • 1000 $2.97
    • 10000 $2.47
    		Buy Now

    Siemens 3RF23701BA26

    Contactors - Solid State 400/600V,22MM SSIS CON,70A,SCRW,110/230V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 3RF23701BA26
    • 1 $475.11
    • 10 $453.65
    • 100 $453.65
    • 1000 $453.65
    • 10000 $453.65
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    BA 26 701 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA26.701A Silec Semiconductors Shortform Data Book 1976 Short Form PDF

    BA 26 701 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Umbrella

    Abstract: F5221
    Text: S CHU RTE R SAS F -52210 A RC-EN -BA RROIS ELECTRONIC COMPONENTS www. s chur te r.fr Type : 172876 63 mA - 125 mA SCHURTER part numbers : 7010.9750.xx - 7010.9760.xx Package family Date Version Microfuse See below See below Composition part Material group


    Original     		PDF 20are Umbrella F5221

    Tsi109

    Abstract: tsi108
    Text: Tsi108 /Tsi109™ Software Initialization Application Note 80B5000_AN001_07 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.


    Original     		PDF Tsi108TM/Tsi109TM 80B5000 Tsi109 tsi108

    AN002

    Abstract: BA3120 TSI110
    Text: Tsi110 Software Initialization Application Note 80E5000_AN002_03 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.


    Original     		PDF Tsi110TM 80E5000 AN002 BA3120 TSI110

    Untitled

    Abstract: No abstract text available
    Text: IS42/45VS81600E IS42/45VS16800E 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES •฀ Clock฀frequency:฀133,฀100฀MHz •฀ Fully฀synchronous;฀all฀signals฀referenced฀to฀a฀ positive clock edge ADVANCED INFORMATION SEPTEMBER 2009 OVERVIEW


    Original     		PDF IS42/45VS81600E IS42/45VS16800E 128Mb 128Mbà IS42/45VS81600Eà IS42/45VS16800Eà IS45VS16800E-75BLA2à IS45VS16800E-10BLA2à 54-ballà

    45VS16800E

    Abstract: 2MX16X4
    Text: IS42/45VS81600E IS42/45VS16800E 16M x 8, 8M x16 ADVANCED INFORMATION SEPTEMBER 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42/45VS81600E IS42/45VS16800E 128Mb IS42/45VS81600E 54-pin 54-ball 45VS16800E 2MX16X4

    ms21209

    Abstract: ms21209 inserts NASM33537 LN 9499 NASM21209 LN 9499 03 075 NASM 33537 MS122076 LN 9499 friction thread NASM8846
    Text: 0101/09.02 UNC American National Coarse Thread UNF American National Fine Thread BSW British Standard Whitworth Thread BSF British Standard Fine Thread BSP/ G British Standard Pipe Thread ISO 228/1 Pipe Thread BA British Association Standard Thread Imperial thread inserts for metals


    Original     		PDF

    PEX8532-BC25BIG

    Abstract: PEX8532 965H 06FFFFFFH 449H PEX8532-BC25BI PEX8532-BB25BI plx pex PEX8111
    Text: ExpressLane PEX 8532AA/BA/BB/BC 8-Port/32-Lane Versatile PCI Express Switch Data Book Version 1.6 February 2007 Website www.plxtech.com Technical Support www.plxtech.com/support/ Phone 800 759-3735 408 774-9060 FAX 408 774-2169 Copyright 2007 by PLX Technology, Inc. All Rights Reserved – Version 1.6


    Original     		PDF 8532AA/BA/BB/BC 8-Port/32-Lane PEX8532-BC25BIG PEX8532 965H 06FFFFFFH 449H PEX8532-BC25BI PEX8532-BB25BI plx pex PEX8111

    D7678

    Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
    Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise


    Original     		PDF WED416S8030A 2Mx16x4 WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI D7678 WED416S8030A10s

    Untitled

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11027-1E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422E-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		PDF DS05-11027-1E MB81117422E-125/-100/-84/-67 152-WORD MB81117422E F9705

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11027-1E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422E-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		PDF DS05-11027-1E MB81117422E-125/-100/-84/-67 152-WORD MB81117422E F9705 MP-SDRAM-DS-20528-7/97

    Untitled

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11023-2E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		PDF DS05-11023-2E MB81117422A-125/-100/-84/-67 152-WORD MB81117422A F9705

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11023-2E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		PDF DS05-11023-2E MB81117422A-125/-100/-84/-67 152-WORD MB81117422A F9705 MP-SDRAM-DS-20362-7/97

    DMX chip

    Abstract: ISO 8015 tolerance HYB25D128323C HYB25D128323C-5
    Text: Data Sheet, V1.7, July 2003 HYB25D128323C[-3/-3.3] HYB25D128323C[-3.6/L3.6] HYB25D128323C[-4.5/L4.5] HYB25D128323C-5 128 Mbit DDR SGRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB25D128323C HYB25D128323C-5 MO-205 DMX chip ISO 8015 tolerance HYB25D128323C-5

    Untitled

    Abstract: No abstract text available
    Text: D a t a S he et , V 1. 41 , J un e 2 00 4 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 256-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-06-23


    Original     		PDF HYB18L256160BF-7 HYE18L256160BF-7 HYB18L256160BC-7 HYE18L256160BC-7 256-Mbit P-VFBGA-54-2

    SMD MARKING CODE N1

    Abstract: No abstract text available
    Text: D a t a S h e e t , V 1 . 4 , A p r i l 2 00 4 HYB18L128160BF-7.5 HYE18L128160BF-7.5 HYB18L128160BC-7.5 HYE18L128160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 128-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-04-30


    Original     		PDF HYB18L128160BF-7 HYE18L128160BF-7 HYB18L128160BC-7 HYE18L128160BC-7 128-Mbit P-VFBGA-54-2 SMD MARKING CODE N1

    WED416S8030A

    Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI
    Text: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation


    Original     		PDF WED416S8030A 2Mx16x WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks WED416S4030A 2MX16x4 WED416S8030A10SI

    smd transistor HY

    Abstract: HYE18L256160BF-7
    Text: Data Sheet, V1.42, Sept. 2004 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-09-10 Published by Infineon Technologies AG,


    Original     		PDF HYB18L256160BF-7 HYE18L256160BF-7 HYB18L256160BC-7 HYE18L256160BC-7 256-Mbit P-VFBGA-54-2 smd transistor HY

    Untitled

    Abstract: No abstract text available
    Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL


    OCR Scan     		PDF HY57V644010 HY57V644020 HY57V654010 HY57V654020 HY57V644011 HY57V644021 HY57V654011 HY57V654021 16Mx4 HY57V644010/

    MB81116820-010

    Abstract: MB81116420
    Text: July 1994 Edition 4.0 FUJITSU DATA SHEET MB81116820-010/-012/-015 CMOS 2 X 1 M X 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing 16,777,216 memory cells accessible in an 8-bit format. The


    OCR Scan     		PDF MB81116820-010 576-WORDS MB81116820 MB81116420 JV0069-947J4

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 2 x 2 R/l x 4 BITS SYNCHRONOUSDYNAMICRAM MB81117422A-125/-1 00/-84/-67 CMOS 2 BANKS OF 2,097,152-W ORD x 4 BITS SYN CH R O N O U S DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		PDF MB81117422A-125/-1 MB81117422A B81117422A F9705 MP-SDRAM-DS-20362-7/97

    Untitled

    Abstract: No abstract text available
    Text: - PRE LIM IN AR Y- July 1996 Edition 1.0 FUJITSU PRO DUCT PROFILE SHEET M B 8 1117822A-125/-100/-84/-67 [2K Refresh] C M O S 2 x 1M x 8 S Y N C H R O N O U S D R A M CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81117822A is a CMOS Synchronous Dynamic Random Access Memory


    OCR Scan     		PDF 117822A-125/-100/-84/-67 576-WORDS MB81117822A MB81117822A-125 MB81117822A-100 MB81117822A-84 MB81117822A-67 44-LEAD

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 2 x 2 R/l x 4 BITS SYNCHRONOUSDYNAMICRAM 00/-84/-67 CMOS 2 BANKS OF 2,097,152-W ORD x 4 BITS SYN CH R O N O U S DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access. Memory SDRAM containing 16,777,216 memory cells accessible in an 4-bit form at.The M B81117422E features a fully synchronous operation


    OCR Scan     		PDF MB81117422E B81117422E F9705 MP-SDRAM-DS-20528-7/97

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU S EM IC O N D U C TO R DATA SH EET ncn_ oc L > b 0 5 -1 1 0 2 3 - 2 E MEMORY CMOS 2 x 2 M x 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD x 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION


    OCR Scan     		PDF MB81117422A-125/-100/-84/-67 152-WORD MB81117422A 44-LEAD FPT-44P-M18) F44025S-1C-1

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 2 x 2 M x 4 BITS SYNCHRONOUS DYNAMIC RAM M B 8 1 1 1 7 4 2 2 E -1 2 5 /-1 0 0 /-8 4 /-6 7 CMOS 2 BANKS OF 2,097,152-WORD x 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		PDF 152-WORD MB81117422E B81117422E MB81117422E-125/-100/-84/-67 44-LEAD FPT-44P-M18)