BA 26 701 Search Results

Umbrella

Abstract: F5221
Contextual Info: S CHU RTE R SAS F -52210 A RC-EN -BA RROIS ELECTRONIC COMPONENTS www. s chur te r.fr Type : 172876 63 mA - 125 mA SCHURTER part numbers : 7010.9750.xx - 7010.9760.xx Package family Date Version Microfuse See below See below Composition part Material group

Tsi109

Abstract: tsi108
Contextual Info: Tsi108 /Tsi109™ Software Initialization Application Note 80B5000_AN001_07 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

AN002

Abstract: BA3120 TSI110
Contextual Info: Tsi110 Software Initialization Application Note 80E5000_AN002_03 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

Contextual Info: IS42/45VS81600E IS42/45VS16800E 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES •฀ Clock฀frequency:฀133,฀100฀MHz •฀ Fully฀synchronous;฀all฀signals฀referenced฀to฀a฀ positive clock edge ADVANCED INFORMATION SEPTEMBER 2009 OVERVIEW

45VS16800E

Abstract: 2MX16X4
Contextual Info: IS42/45VS81600E IS42/45VS16800E 16M x 8, 8M x16 ADVANCED INFORMATION SEPTEMBER 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

Contextual Info: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL

ms21209

Abstract: ms21209 inserts NASM33537 LN 9499 NASM21209 LN 9499 03 075 NASM 33537 MS122076 LN 9499 friction thread NASM8846
Contextual Info: 0101/09.02 UNC American National Coarse Thread UNF American National Fine Thread BSW British Standard Whitworth Thread BSF British Standard Fine Thread BSP/ G British Standard Pipe Thread ISO 228/1 Pipe Thread BA British Association Standard Thread Imperial thread inserts for metals

MB81116820-010

Abstract: MB81116420
Contextual Info: July 1994 Edition 4.0 FUJITSU DATA SHEET MB81116820-010/-012/-015 CMOS 2 X 1 M X 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing 16,777,216 memory cells accessible in an 8-bit format. The

PEX8532-BC25BIG

Abstract: PEX8532 965H 06FFFFFFH 449H PEX8532-BC25BI PEX8532-BB25BI plx pex PEX8111
Contextual Info: ExpressLane PEX 8532AA/BA/BB/BC 8-Port/32-Lane Versatile PCI Express Switch Data Book Version 1.6 February 2007 Website www.plxtech.com Technical Support www.plxtech.com/support/ Phone 800 759-3735 408 774-9060 FAX 408 774-2169 Copyright 2007 by PLX Technology, Inc. All Rights Reserved – Version 1.6

D7678

Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
Contextual Info: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11027-1E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422E-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11027-1E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422E-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11023-2E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: MEMORY 2 x 2 R/l x 4 BITS SYNCHRONOUSDYNAMICRAM MB81117422A-125/-1 00/-84/-67 CMOS 2 BANKS OF 2,097,152-W ORD x 4 BITS SYN CH R O N O U S DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: - PRE LIM IN AR Y- July 1996 Edition 1.0 FUJITSU PRO DUCT PROFILE SHEET M B 8 1117822A-125/-100/-84/-67 [2K Refresh] C M O S 2 x 1M x 8 S Y N C H R O N O U S D R A M CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81117822A is a CMOS Synchronous Dynamic Random Access Memory

Contextual Info: MEMORY 2 x 2 R/l x 4 BITS SYNCHRONOUSDYNAMICRAM 00/-84/-67 CMOS 2 BANKS OF 2,097,152-W ORD x 4 BITS SYN CH R O N O U S DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access. Memory SDRAM containing 16,777,216 memory cells accessible in an 4-bit form at.The M B81117422E features a fully synchronous operation

Contextual Info: FUJITSU S EM IC O N D U C TO R DATA SH EET ncn_ oc L > b 0 5 -1 1 0 2 3 - 2 E MEMORY CMOS 2 x 2 M x 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD x 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION

DMX chip

Abstract: ISO 8015 tolerance HYB25D128323C HYB25D128323C-5
Contextual Info: Data Sheet, V1.7, July 2003 HYB25D128323C[-3/-3.3] HYB25D128323C[-3.6/L3.6] HYB25D128323C[-4.5/L4.5] HYB25D128323C-5 128 Mbit DDR SGRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: MEMORY CMOS 2 x 2 M x 4 BITS SYNCHRONOUS DYNAMIC RAM M B 8 1 1 1 7 4 2 2 E -1 2 5 /-1 0 0 /-8 4 /-6 7 CMOS 2 BANKS OF 2,097,152-WORD x 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: D a t a S he et , V 1. 41 , J un e 2 00 4 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 256-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-06-23

HYE18L256160BF-7

Contextual Info: D a t a S h e e t , V 1 . 4 , A p r i l 2 00 4 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 256-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-04-30

SMD MARKING CODE N1

Contextual Info: D a t a S h e e t , V 1 . 4 , A p r i l 2 00 4 HYB18L128160BF-7.5 HYE18L128160BF-7.5 HYB18L128160BC-7.5 HYE18L128160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 128-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-04-30

WED416S8030A

Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI
Contextual Info: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation

smd transistor HY

Abstract: HYE18L256160BF-7
Contextual Info: Data Sheet, V1.42, Sept. 2004 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-09-10 Published by Infineon Technologies AG,