B81117422A Search Results

Contextual Info: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SDC4U V6442- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6442-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as

Contextual Info: -P R E L IM I N A R Y July 1996 Edition 1.0 FUJITSU PRO DUCT PROFILE SHEET B81117422A-125/-100/-84/-67 [2K Refresh] CMOS 2 X 2M X 4 SYNCHRONOUS DRAM CMOS 2 BANKS OF 2,097,152-WORDS x 4-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu B81117422A is a CMOS Synchronous Dynamic Random Access Memory

Contextual Info: - PRELIMINARY - July 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 1 7422A-125/-100/-84/-67 [2 K R e fre s h ] CMOS 2 X 2M X 4 SYNCHRONOUS DRAM C M O S 2 B A N K S OF 2,097,1 5 2 - W O R D S x 4 - B I T S Y N C H R O N O U S DYNAM IC RANDOM ACCESS M EM O RY

Contextual Info: MEMORY 2 x 2 R/l x 4 BITS SYNCHRONOUSDYNAMICRAM B81117422A-125/-1 00/-84/-67 CMOS 2 BANKS OF 2,097,152-W ORD x 4 BITS SYN CH R O N O U S DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu B81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: FUJITSU S EM IC O N D U C TO R DATA SH EET ncn_ oc L > b 0 5 -1 1 0 2 3 - 2 E MEMORY CMOS 2 x 2 M x 4 BITS SYNCHRONOUS DYNAMIC RAM B81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD x 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION

Contextual Info: cP March 1997 Revision 2.1 DATA SHEET FUJI - * SDC4U V7242- 67/84/100/125 T-S 32MByte (4M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC4UV7242-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as

Contextual Info: July 1996 Revision 1.0 DATA SHEET _ SDC4UV6442- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6442-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

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Contextual Info: SDRAM 1 I Synchronous DRAM: SDRAM (CMOS) VCC= Organization (W * b) Part Number Clock Frequency max. (MHz) M B 81117421A-100 100[10] Access Time 1 Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) + 3.3 V ± 0.3V , Ta= 0°C to +70 °C Power Consumption