B75D Search Results

B75D

Contextual Info: 2 4 5 7 6 REVISIONS I5S ZONE DE5CRIPTI0N\PER REQUEST\DATE F F RECOMMENDED MOUNTING HOLE E E D D - 2.3 C C NOTES: FINI5H PLATING THICKNESS IN MICRO-INCHE5 1, BRASS PER G G -B-626 2, BRASS PER G G -B-513 3, NICKEL PL. 100 MIN. THICK OVER COPPER STRIKE 4 , PHOSPHOR BRONZE PER GG -B-75D

Contextual Info: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

Contextual Info: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING R _ B _ _ DHA _ F NUMBER OF POSITIONS MOUNTING STYLE D= .250" EARS, FLUSH MOUNTING N= NO MOUNTING EARS A= SIDE MOUNTING WITH #4-40 THREADED INSERTS R= NO MOUNTING EARS, WITH BOARD LOCKS S= SIDE MOUNTING PLATING

A654

Abstract: rtc 0.0504 805468 a63a AN9766
Contextual Info: Harris Semiconductor No. AN9766 Harris Digital November 1997 Keeping Time with the Harris CDP68HC68T1 Real Time Clock and the “Millennium Bug” Author: Christopher Mazzanti Introduction T1. For the most part, this is true - if programmed correctly, the host MCU interfacing with the T1 will keep the correct

B110D

Abstract: B105D B100D 4511 bd B10D
Contextual Info: REVISIONS REV. ECO. NO DESCRIPTION DATE BY C 985 REDRAW/REVISE. ALL AVAILABLE MOUNTINGS ADDED 04/12/06 MNH D 1346 ADDED METRIC DIMENSIONS, TABULATED MATERIALS 06/29/07 ASK E 1810 ADD HB TERMINATION, UPDATE LAYOUT 9/25/2008 ASK PART NUMBER CODING B AA D_

Contextual Info: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.

Contextual Info: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HYM532214A

Contextual Info: HYM532214A E-Series •HYUNDAI 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532214A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 decoupling capacitors are mounted

ORP12

Abstract: light dependent resistor orp12 light resistance orp12 SCSR 118 68HC05B4 disp1 Application Note AN431 b765 IC MC 14489 a608
Contextual Info: Order this document MOTOROLA as AN431/D SEMICONDUCTOR APPLICATION NOTE AN431 Temperature measurement and display using the MC68HC05B4 and the MC14489 By Jeff Wright, Motorola Ltd., East Kilbride INTRODUCTION TEMPERATURE MEASUREMENT This application note is intended to show the basic

b745

Abstract: b745 diode CRC calculation mdlc VPW interface B635 B744 B744 transistor b746 MC68HC05 Applications Guide mcr 100a
Contextual Info: Order this document by AN1224/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1224 Example Software Routines for the Message Data Link Controller Module on the MC68HC705V8 By Chuck Powers Multiplex Applications INTRODUCTION The message data link controller MDLC module is a serial multiplex communication module designed to

HYM540A200MG

Contextual Info: HYM540A200 M-Series HYUNDAI 2M X 40-bit CMOS DRAM MODULE DESCRIPTION The HYM540A200 is a 2M x 40-bit Fast page mode CMOS DRAM module consisting of twenty HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling capacitor is mounted for each DRAM.

a63a

Abstract: rtc 0.0504 an9702 A654 transistor A654 68HC05 CDP6818 CDP68HC05 CDP68HC05C8B CDP68HC68T1
Contextual Info: Keeping Time with the Intersil CDP68HC68T1 Real Time Clock and the “Millennium Bug” Application Note Introduction The Intersil CDP68HC68T1 is a multifunctional CMOS real time clock with 32 bytes of general purpose RAM and various power sense and watchdog control circuitry. The main

Contextual Info: KEMET Part Number: R74LF2180AA00J 74LF2180AA00J Capacitor, film, 0.018 uF, +/-5% Tol, -55/+105C, General Purpose, 630V@85C, Lead Spacing=10 mm L General Information T Manufacturer: Brand: H F Miscellaneous Electrical: Arcotronics Not for new design. Use series

d774

Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
Contextual Info: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT

211CAS

Abstract: HY5117404B ceam A10C HY511 BATX19
Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 4 B S e r ie s 4M x 4-bit CMOS DRAM with Extended Data Out P R E L IM IN A R Y DESCRIPTION T h e H Y 5117 404 B is the new generation and fast dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4-bit. The H Y 5117 404 B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

b745 diode

Abstract: sae j2178 STANDARD B744 B744 transistor CRC calculation mdlc sae 1010 130d sae j2178 part 1 B744(A)T b746
Contextual Info: Freescale Semiconductor Order this document by AN1224/D AN1224 Example Software Routines for the Message Data Link Controller Module on the MC68HC705V8 Freescale Semiconductor, Inc. By Chuck Powers Multiplex Applications INTRODUCTION The message data link controller MDLC module is a serial multiplex communication module designed to

Contextual Info: “H Y U N D A I HYM5V72A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168

Contextual Info: “HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide

Contextual Info: mH Y II II VI A I HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 2,097,152

Contextual Info: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion

Contextual Info: • • H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM with WPB DESCRIPTION The HY5116410A is the new generation and last dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: “H Y U N D A I TM I tf n U i t HY57V16801 Series 2M I X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3.3 Volt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 1,048,576