B724B40 Search Results

Contextual Info: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The MSM51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.

sm 0038 tsop

Abstract: sm 0038 sm 0038 PIN DIAGRAM D2720
Contextual Info: O K I S em ic o n d u c to r M SC23T/D 2720A -X X BS9 2,097,152-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SOJ

cq 0765

Abstract: CQ 419 MARKING E2B KGF1638 0765 cq Ta 7210 p
Contextual Info: O K I Semiconductor KGF1638 Plastic GaAs Power FET for GSM and TDMA Applications D E S C R IP T IO N The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is

Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5205 ADPCM SPEEC H SYNTHESIS LSI TO CUSTOM ERS FOR NEW CIRCUIT DESIGN converter and includes a -40dB /oct low -pass filter. The sam pling frequency can also be selected u p to 32kHz. Therefore, theMSM6585 can realize a high quality voice.

511000

Abstract: 511000A 511000A-70 20-PIN 26-PIN MSM511000A-70 MSM OKI 511000a-80
Contextual Info: SflE D O K I O K I • b 7 2 4 2 4 0 0 0 1 2 7 5 5 TST « O K I J S E M I C O N D U C T O R GROUP s e m i c o n d u c t o r " T - % - z . 2> - is - M S M 5 1 1 0 0 0 A 1,048,576-WQRD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 5110OOA is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The

Contextual Info: O K I Semiconductor MSM5 1V4170/SL 262,144-Word x 16-Bit D YN A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V4170/SL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM51V4170/SL is OKI's CMOS silicon gate process

IC 741

Abstract: photo sensor pin diagram PHOTO SENSORS PHOTO TRANSISTOR phototransistor t36
Contextual Info: OKI electronic T36_ components Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T36 silicon phototransistor provides a high degree of sensitivity. The T36 has wide application for a compact and light-weighted package.

Funai

Abstract: MSM65512 MSM65P512 DIP40-P-600 OKI DIP-40P GG13 addressing mode in core i7
Contextual Info: SflE D • b?24240 0013Ô41 232 M O K I J O K I semiconductor— 0 k i s e m i c o n d u c t o r c r o u p MSM65512/65P512 _ -r-H9-i9-q>* OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION MSM65512 is a high-performance 8-bit single-chip controller that employs Oki's original nX-8/50

Contextual Info: O K I Semiconductor MSM5 1 17100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE M ODE TYPE DESCRIPTION The M SM 5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 5117100 is OKI's CM OS silicon gate process technology.

BL-70

Contextual Info: O K I Semiconductor MSM5 14102 B/BL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUM N MODE TYPE DESCRIPTION The MSM514102B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51C464A 65,536-Word x 4-Bit D Y N A M IC R A M DESCRIPTION The MSM51C464A is a new generation dynam ic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The

MSM514800

Contextual Info: O K I Semiconductor MSM514800/L 524,288-Word x 8-Bit D Y N A M IC RAM: FAST PAGE M O D E TYPE DESCRIPTION The MSM514800/L is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800/ L is OKI's CMOS silicon gate process technology.

Contextual Info: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

oki m6650

Abstract: m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC MSM6650
Contextual Info: O K I Sem iconductor MSM6650 External ROM Drive Speech Synthesis LSI GENERAL D ESCR IPTIO N MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the