B3 HO TRANSISTOR Search Results

DTA114EX2

Abstract: DTA114E DTC114E DTC114EX2 KIY transistors
Contextual Info: Transistors/Surface Mounting Type 73 Digital Transistors with Two Internal Circuits • UMT5 • SMT5 Package Two transistors with internal resistors have been built into the 2125 UMT5 and 2916 (SMT5) packages. Since the circuit architecture is completed internally, no external connections are required, so less space is needed.

Contextual Info: 3QE D • 7^537 GQE'HIS 3 m ^ - 2 P \ - ö 7 SGS-TfiOMSON IILliOTMt» 5 1 s6 s - SGSP201 thomson N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss SGSP201 100 V ^DS on 1.4 0 *D 2.0 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING

Contextual Info: TOSHIBA 2SC3225 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3225 INDUSTRIAL APPLICATIONS Unit in mm SW ITCHING APPLICTIONS. SOLENOID DRIVE APPLICATIONS. • • High DC Current Gain : l r p E = 500 Min. (Iß = 400mA) Low Saturation Voltage : V qe ( s a t ) = ^-5V (Max.) (Iq = 300mA)

KTA1666

Abstract: KTC4379 OB2 SOT-89
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1224 2 S D 1 224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h^E = 4000 (Min.)

FSEB30

Abstract: BFP640
Contextual Info: A pp li c at i on N ot e , R ev . 1 . 2 , J an ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 3 6 L o w C o s t , 3 V ol t , + 1 4 d B m 2 .3 3 G H z S D A R S A c t i v e A nt e n n a 2n d S t a g e L ow N oi s e A m p l i f i e r u s i n g th e I n f i ne o n B F P 6 4 0 S i G e T r a n s i s to r

ir2101 datasheet

Abstract: IR2101 IR2101 AN IR2101S MP150 B3 ho transistor
Contextual Info: Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout

IR2101

Abstract: ir2101 datasheet IR2101 AN IR2101S MP150 silicon rectifier data manual
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

A1402

Abstract: 25CC 2SA1402 T0126
Contextual Info: [~Ordering num ber: EN 1761B 2SA1402/2SC3596 PNP/NPN Epitaxial Planar Silicon Transistors U ltrahigh-D efinition CRT D isplay Video Output A pplications A p p licatio n s •Ultrahigh-definition CRT display. • Video output. • Color TV chroma output. • Wide-band amp.

gps schematic diagram

Abstract: BFP740 BFP740F gps lna gps 1575 1575-r amplifier
Contextual Info: A pp li c at io n N o t e, R e v . 1. 3 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 1 7 L o w N o i s e A m p l i fi e r L N A f o r 1 5 7 5 M H z ( G P S ) A p pl i c a t i o n s us i n g t h e U lt r a - L o w N o i s e S i G e : C B FP 7 40 F Tr a ns i s t o r

ERIE CAPACITORS

Abstract: MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, c la s s-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

hard disk head preamp

Abstract: MAGNETIC HEAD impedance Pre amplifier hdd BF transistor series 90 TDA5152X MA4853 HDD Preamplifier MAGNETIC HEAD read amplifier magnetic stripe integrated circuit HDD MAGNETIC HEAD Read Amplifier
Contextual Info: Philips Semiconductors Product specification Pre-amplifier for Hard Disk Drive HDD with MR-read / Inductive write heads TDA5152 FEATURES GENERAL DESCRIPTION • Designed for 10 dual-stripe MR-read/inductive write heads The 5.0 V pre-amplifier for HDD applications has been

harris 8 lead cerdip DIMENSIONS

Contextual Info: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

BLW40

Abstract: MCD205 TLO 721
Contextual Info: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification

BLY91

Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SH EET ISSU E B - JU L Y 1997 FEATURES * C o m p a ct package * L o w on state losses * L o w d rive re q u ire m e n ts * O perates up to 20V s u p p ly * 2.5 A m p c o n tin u o u s ratin g PARTM ARKING DETAIL - Z H B 6718

BFP640

Abstract: gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 1 L o w N o i s e A m p l i f i e r f o r G P S A p p l i c at i o n s u s i ng B FP 6 40 S i G e T ra n s i s t o r R F & P r o t e c ti o n D e v i c e s

2n4080

Abstract: 2N4260 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad
Contextual Info: RAYTHEON/ 57 SEMICONDUCTOR SMALL SIGNAL TRANSISTORS p r o d u c t s p e c ific a tio n s 7597360 R AY THEON CO» 27C Ultra High Speed Logic Switches •raytheonI GV 75T?3t,0 □ □ 0 3 5 5 e] 1 PNP 03559 D J - 37- / 3 Popular Types Description Ultra high speed Silicon epitaxial

FSEM30

Abstract: BFR360F TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 0 A 900 MHz Low Noise Amplifier Using the B F R 3 6 0 F T r a n s i s t o r i n T S F P - 3 P ac k a g e R F & P r o t e c ti o n D e v i c e s Edition 2008-02-22

sdars

Abstract: network analyzer measure antenna BFP640
Contextual Info: A pp li c at i on N ot e , R ev . 1 . 2 , J an ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 3 7 L o w C o s t , 3 V ol t , + 1 2 . 5 dB m 2 . 3 3 G H z S D A R S A c t i v e A nt e n n a 2n d S t a g e L ow N oi s e A m p l i f i e r u s i n g th e I n f i ne o n B F P 6 4 0 S i G e T r a n s i s to r

FSEB30

Abstract: 1575 GPS BFP640
Contextual Info: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 4 L o w - C u r r e nt L o w N o i s e A m p l if i e r L N A f o r 1 5 7 5 M H z G l o b a l P o s i ti o n i n g S a t e l l i te ( G P S ) A p pl i c a t i o n s us i n g t h e S i G e B F P 6 4 0 T r a n s i s t o r

digital multimedia broadcasting

Abstract: dmb transistor BFP640 6723 uhf amplifier design Transistor FSEB30 Satellite power supply schematic diagram SOT343 lna transistor dmb
Contextual Info: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 3 Low Noise Amplifier for Satellite Digital M u l t i m e d i a B r o ad c a s t i n g D M B A p p l i c a t i on s u s i n g th e S i G e B F P 64 0 T r a n s i s t or

DIODE ku 1490

Abstract: k 246 transistor 1.4901 bd135 equivalent
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM

class h power amplifier schematic

Abstract: class d amplifier schematic diagram SMC-02 BFP650 Miteq network analyzer measure antenna CLASS D amplifier diagram class g power amplifier schematic sdars
Contextual Info: A pp li c at i on N ot e , R ev . 1. 2 , S e pt e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 2 3 L o w C o s t 2. 3 3 G H z C l a s s A S D A R S A c t i v e A n te n n a A m p l i f i e r O ut p u t S ta g e u s i n g t h e I n f i ne o n B FP 6 50 S i G e T ra n s i s t o r