B1 C90 Search Results

B41010 B41293

Abstract: B1-A230 B1-C90 B31861 B1C90 B2B600 B32642 T60405 b81121 T60401
Contextual Info: Alphanumerical Index Type Page A A1701 A1707 A1-A1 A1-A10, -A20. -A30 A1-A230 A1-C90, -C150 A4-A1 A80-A230X A80-C90X A81-A230X,-A350X A81-C90X A83-A230X A83-C90 153 178 178 172 172 178 174 174 174 174 174 174 B B1-A230, -A350 B1-C90, -C150 B25832 B25834 B25835

Contextual Info: EAA*7BCAA* ;B0/;@>?5/0!;5>1 #;B1=0&@<<8D ,<DB18897805669395>3I0C,0C9J5 BF F # 030#,0#"*% :1C?031:1=-?5;:0<;B1=0>;8@?5;: '(%&030"#'"!&0 ' -:

Contextual Info: EAA*7AA* 8?=-0;B0!;5>10 #;B1=0&@<<8D ,<DB18897805669395>3I0C,0C9J5 48D98E #(030#,0#"*% :1C?031:1=-?5;:0<;B1=0>;8@?5;: '(%&030"#'"!&0 '410 +0 2-958D0 ;20 (8?=-0 ;B0 !;5>10 <;B1=0 >@<<851>0 <=;A501>0 @<0 ?;0 AA*0 5:0 -:

Contextual Info: CAA*7EAA* 8?=-0;B0!;5>10 #;B1=0&@<<8D ,<DB18897805669395>3I0C,0C9J5 48D98E #(030#,0#"*% :1C?031:1=-?5;:0<;B1=0>;8@?5;: '(%&030"#'"!&0 '410 +'0 2-958D0 ;20 (8?=-0 ;B0 !;5>10 <;B1=0 >@<<851>0 <=;A501>0 @<0 ?;0 EAA*0 5:0 -: 1C?=1918D0 /;9<-/?0 B(0 C0 CA990 C0 990 <-/7-3180 *5?40 1225/51:/51>0 ;20 @<0 ?;

SH1101A

Abstract: STV8105 ssd1305 Solomon ssd1305 dali MASTER schematic bcd to gray code converter microSD USB Reader sharp oled display CFAL25664A-Y-B1 MIC2290
Contextual Info: Crystalfontz America, Incorporated GRAPHIC OLED MODULE SPECIFICATIONS Crystalfontz Model Number CFAL25664A-Y-B1 Hardware Version Version A, April 2010 Data Sheet Version Version 1.0, April 2010 Product Pages

foxconn g41

Abstract: Foxconn INVERTER foxconn circuit diagram foxconn 1D05V 4P2R040 capacitor C0402 act 1 107 1p0 foxconn bios flash header c06031
Contextual Info: W06N Block Diagram TMDS MXM VGA Card Thermal Mobile CPU Yonah CLK GEN ICS954226 03 11,12 B1 Stepping DMI I/F Audio DJ31 VRAM*4 MAX651021 04.05 PCI Express Line In30 30 S-Video 3D3V_AUX SYSTEM DC/DC MAX1845 INPUTS TV-OUT 1D05V_S0 DB DCBATOUT 1D5V_S0 1D8V_S3

Contextual Info: Toggles Series MB2000 TYPICAL SWITCH ORDERING EXAMPLE B1 Poles & Circuits ON Contact Materials & Ratings ON 2065 SPDT ON ON 2061 DPDT ON (ON) 2085 DPDT ON ON 2181 4PDT ON (ON) 2185 4PDT ON ON C Caps W Silver Rated 6A @ 125V AC & 3A @ 250V AC G Gold Rated 0.4VA max @

MB2000

Abstract: MB2061 MB2011 AT4043 MB2085
Contextual Info: Toggles Series MB2000 TYPICAL SWITCH ORDERING EXAMPLE B1 Poles & Circuits ON Contact Materials & Ratings ON 2065 SPDT ON ON 2061 DPDT ON (ON) 2085 DPDT ON ON 2181 4PDT ON (ON) 2185 4PDT ON ON D C Caps W Silver Rated 6A @ 125V AC & 3A @ 250V AC G Gold Rated 0.4VA max @

T2D DIODE

Abstract: T2d 86 diode T3D DIODE T2D 87 diode T2D DIODE 49 T2D DIODE 94 AK9 RJ12 transistor ad149 T2D 79 diode C1959
Contextual Info: 5 4 3 VIO 2 1 VCC3V3 C2 C1 + AD[31:0] 0.1uF 22uF B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 D VCC5V AD31 AD29 AD27 AD25 VCC3V3 AD21 AD19 VCC3V3 AD17 -CBE2 -IRDY VCC3V3 -DEVSEL -LOCK -PERR -SERR VCC3V3 -CBE1 AD14 VCC3V3 AD12 AD10 AD8 AD7 VCC3V3 AD5 AD3 AD1 VIO VCC5V

transistor a4

Abstract: DS1708 DS1705 DS1706 DS1706L DS1706P DS1706R DS1706S DS1706T DS1707
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 3/2/99 Subject: PRODUCT CHANGE NOTICE - C90201 Description: Revision Change - DS1705, DS1706, DS1707, DS1708 This PCN will replace PCN A92501 which has been canceled.

Contextual Info: IGBT with Diode IXSH 10N120AU1 SCSOA Capability Sym bol T e st C o n d itio n s v CES v CGR T = 25oCto150°C TJ = 25°C to 150°C; RGE= 1 MQ v v GEM Continuous T ransient ^C25 ^C90 *CM Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms SSOA RBSOA VGE = 15 V, Tj= 125°C, Hg= 150 O

Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms

G50N60

Abstract: 50n60 50N6 IXGH50N60A IXGH50N60AS g50n 50N60A g50n60 application DSA002033
Contextual Info: HiPerFASTTM IGBT IXGH50N60A VCES IXGH50N60AS IC25 VCE sat tfi Surface Mountable Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C90 TC = 90°C

qe R 521 smd

Abstract: smd mk ixgh20n60b
Contextual Info: □ IXYS P re lim in a ry data HIPerFAST IGBT Symbol Test Conditions V v CGR T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 v v GEM Continuous Transient ^C25 ^C90 ' cm SSOA RBSOA Pc IXGH20N60B IXGH20N60BS « Maximum Ratings 600 600 V V ±20 ±30

50N60A

Abstract: IXGH50N60AS IXGH50N60A
Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600

ixys ml 075

Abstract: 20N30S
Contextual Info: □ IXYS PRELIMINARY DATA SHEET Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C 20 A ^CM Tc = 25°C, 1 ms

1xgh32

Abstract: IXGH32N60B
Contextual Info: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C

marking E1 sot363

Contextual Info: CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors dual transistors HBNP45S6R Features • Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package.

2N3904 chip

Abstract: MARKING .01 SOT 2N3904 2N3906 HBNP3946S6R
Contextual Info: CYStech Electronics Corp. Spec. No. : C902S6R Issued Date : 2003.03.18 Revised Date : Page No. : 1/5 General Purpose NPN / PNP Epitaxial Planar Transistors dual transistors HBNP3946S6R Features • Includes a 2N3904 chip and 2N3906 chip in a SOT-363R package.

pn222

Abstract: PN2222A 323 package PN2222A PN2907A HBNP2227S6R
Contextual Info: CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors dual transistors HBNP2227S6R Features • Includes a PN2222A chip and PN2907A chip in a SOT-363R package.

24N50

Abstract: IXGH24N50B IXGH24N60B
Contextual Info: HiPerFAST IGBT V CES IXGH24N50B/S IXGH24N60B/S Maximum Ratings Symbol Test Conditions Vces Tj = 25°C to 150°C 500 600 V v CGfl Tj = 25°C to 150°C; Rge = 1 M fi 500 600 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25 T c = 25°C 48 A 'c90 T c = 90°C

dm9161aep board

Contextual Info: AT91CAP9A-DK Development Kit . User Guide 6321B–CAP–02-Jul-07 1-2 6321B–CAP–02-Jul-07 AT91CAP9A-DK Development Kit User Guide Table of Contents

9a21

Abstract: 6A91
Contextual Info: 1234567894ABCDEF69 1234567894ABCDEF69 123456278 29ABCDEFD  4C457457DC7  234C25DC4E4E !F56" 6" 9#5$$52%   17E &4C3F"#53'A48  7CD45 4DCCBC54B4F565  A7!) 7$*C24  x × 2D9AD  :#"

rn37

Abstract: RH -12V SDS RSP12 TN1L vg96 jj18 HS 1106 BS J27A RSP11 AF18
Contextual Info: _a_ AF1 AE7 AF9 AE12 AE15 AF18 AE20 AF26 AD3 AD24 AD26 Y2 Y25 V1 V26 R2 T12 T11 vsso VSS1 VSS2 VSS3 VSS4 VSS5 VSS6 VSS7 VSS8 VSS9 VSS10 VSS11 VSS12 VSS13 VSS14 VSS15 VSS16 VSS17 VSS18 VSS19 VSS20 VSS21 VSS22 VSS23 VSS24 VSS25 VSS26 VSS27 VSS28 VSS29 VSS30