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    smd diode 819

    Abstract: rg33c
    Text: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES


    OCR Scan     		PDF IXGH32N60BU1 IXGH32N60BU1S T0-247 O-247 smd diode 819 rg33c

    1xgh32

    Abstract: IXGH32N60B
    Text: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C


    OCR Scan     		PDF IXGH32N60B IXGH32N60BS T0-247 32N60BS) 1xgh32