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    B 647 AC TRANSISTOR Search Results

    B 647 AC TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B 647 AC TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic timer relay

    Abstract: 12V Timer RELAY WT2223
    Text: R&E International, Inc. 647 Clark Avenue, King of Prussia, PA 19406 WORLDTRONICS INTERNATIONAL CLOCK TIMER Specification number: RE222 I.C. Identification number: WT2223 Designed for use in oven ranges the RE222 can be used in a variety of AC power supply clock timer applications.


    Original     		PDF RE222 WT2223 RE222 RE222r050928 ic timer relay 12V Timer RELAY WT2223

    marking BSs sot23

    Abstract: C 82 Q62702-S482 Q62702-S492 Q62702-S557 Q62702-S560 sot-23 pnp npn bss 100 marking BSs sot23 siemens
    Text: PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain ● Low collector-emitter saturation voltage ● Complementary types: BSS 79, BSS 81 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BSS 80 B


    Original     		PDF Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 OT-23 marking BSs sot23 C 82 Q62702-S482 Q62702-S492 Q62702-S557 Q62702-S560 sot-23 pnp npn bss 100 marking BSs sot23 siemens

    cmos image sensor

    Abstract: cmos IMAGE SENSOR vga HV7131B hyundai 640X480 hyundai 14 pin cmos IMAGE SENSOR H268 Photodiode Array 32 element cmos digital image sensor
    Text: HV7131B Electronics Industries Co., Ltd. System IC Division CMOS IMAGE SENSOR With 8-bit ADC PRELIMINARY DESCRIPTION HV7131B is a highly integrated single chip CMOS color image sensor using Hyundai 0.5um CMOS process developed for image application to realize high efficiency R/G/B photo sensor. The sensor has 648X488 pixel


    Original     		PDF HV7131B HV7131B 648X488 642X482 640X480) DA31991011R cmos image sensor cmos IMAGE SENSOR vga hyundai 640X480 hyundai 14 pin cmos IMAGE SENSOR H268 Photodiode Array 32 element cmos digital image sensor

    PTC THERMISTOR TDK

    Abstract: inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206
    Text: AND8470/D A 25 to 55 V, 0.7 to 1.5 A, Single Stage Power Factor Corrected Constant Current Offline LED Driver with Flexible Dimming Options Prepared by: Frank Cathell APPLICATION NOTE ON Semiconductor Introduction energy savings without compromising safety and


    Original     		PDF AND8470/D PTC THERMISTOR TDK inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206

    bd 640

    Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
    Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington


    OCR Scan     		PDF 23SbOS DQ043C T-33-31 OP-66) U4J94 BD644, BD648, BD650 bd 640 TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650

    Wakefield

    Abstract: THERMAL LINKS TO TO-5
    Text: A e G c G W A KEFIELD ENGINEERING ^ P A m n A n a n te H iu ie iA n Components Division ^ 35 - m 60 Audubon Road, W akefield, MA 01880 Tel. 617 245-5900 TWX 710-348-6713 259 SERIES Series 259 Equalizing Links provide thermal connection but electrical separation for


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    bft93

    Abstract: marking x1 B 647 AC transistor
    Text: BFT93 PNP Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF BFT93 BFT93 OT-23 marking x1 B 647 AC transistor

    B 647 AC transistor

    Abstract: 142 transistor Marking WZS
    Text: SIEMENS BCR 142 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R i=22kii, R2=47ki2 Marking Ordering Code BCR 142 WZs Pin Configuration Q62702-C2259 1=B 2=E Package o II CO Type SOT-23


    OCR Scan     		PDF 22kii, 47ki2) Q62702-C2259 OT-23 300ps; B 647 AC transistor 142 transistor Marking WZS

    Untitled

    Abstract: No abstract text available
    Text: BSE D • Ô23fc»320 0 0 1 7 0 ^ PNP Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS ñ H SIP BFT 93 _ *'" " _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN .


    OCR Scan     		PDF OT-23 23b320 BFT93

    bc617

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon Darlington Transistors BC 617 BC 618 • High current gain • High collector current Type Marking Ordering Code BC 617 BC 618 — Q62702-C1137 Q62702-C1138 Pin Co nfigurat ion 1 2 3 C B .E Package1 TO-92 Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-C1137 Q62702-C1138 71utoff CHPOOI87 fi23SbOS D120531 235b05 G12D532 fl235b05 bc617

    MG75G2CL1

    Abstract: MG75G2cl1 toshiba 68Q5 A649
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G2CL1 Unit in mm 5-Mi 2-05.3ÍO.3 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. o . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


    OCR Scan     		PDF MG75G2CL1 2-68A1A MG75G2CL1 MG75G2cl1 toshiba 68Q5 A649

    tda 2038

    Abstract: 2SA417 2SA1417 2SC3647
    Text: O rd e rin g n u m b e r: EN 2006A 2SA1417/2SC3647 N o .2006A SA W O PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . Highbreakdown voltage and large current capacity. . Fastswitching time.


    OCR Scan     		PDF 2SA1417/2SC3647 2SA1417 250mm2 tda 2038 2SA417 2SA1417 2SC3647

    MRF260

    Abstract: MRF262 MRF260 motorola B 647 AC transistor S0235
    Text: I MOT OROL A SC XSTRS/R MbE F D b3b?2SM omMsa? MOTOROLA - SEMICONDUCTOR TECHNICAL DATA 3 3 *2» - 0*0 MRF260 The R F Line SW 1 3 6 -1 7 5 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d esigned fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li­


    OCR Scan     		PDF MRF260 MRF261 MRF262 MRF264 MRF260 MRF260 motorola B 647 AC transistor S0235

    Untitled

    Abstract: No abstract text available
    Text: 01E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ Light Detector 4302571 G02727M 37E D H A RR IS SEillCOND S E CT OR 19812 1 • HAS 7 ^ 4 / - < £ / Planar Silicon Photo Transistor BPW36, BPW37 T he G E Solid S tate BPW 36 and BPW 37 are highly sensitive N P N P lan ar Silicon Phototransistors.


    OCR Scan     		PDF G02727M BPW36, BPW37 92CS-42662 92CS-429S1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436W-1OOOB OT429 T0247) BUK436W-1000B

    B 647 AC transistor

    Abstract: uav specification transistor 2TH
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK452-60A/B BUK472-60A/B BUK472 T186A B 647 AC transistor uav specification transistor 2TH

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK542-1 OOA/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF 711Qfi2b BUK572-1OOA/B BUK572 -100A -100B BUK542-1

    MRF477

    Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
    Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear


    OCR Scan     		PDF fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK452-60A/B BUK472-60A/B BUK472 OT186A

    BUW90

    Abstract: BUW9
    Text: SGS-THOMSON BUW90 ^ 0 ^©[iL[i gïïMSÛ(DS NPN FAST SWITCHING POWER TRANSISTOR • VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­ TION ■ TURN-ON AND TURN-OFF TAIL SPECIFICA­ TIONS ■ TURN-ON dic/dt FOR BETTER RECTIFIER CHOICE ■ SW ITCHING TIMES SPECIFIED WITH AND W I­


    OCR Scan     		PDF BUW90 BUW90 BUW9

    audio noise cancellation

    Abstract: PZT 855 749 OP AMP soa tester 747 op amp 748 OP AMP
    Text: Table of Contents Welcome to A pex. Where we live. Quality at Apex. PWM A m p lifiers. Linear vs. PWM power delivery. The H-Bridge.


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    transistor Bf 966

    Abstract: MRF486 2204B 1N4997 221A-04 RF POWER TRANSISTOR NPN MOTOROLA LINEAR HF arco 429
    Text: MO T O R O L A SC XSTRS/R 4bE T> F b3b72S4 00=14703 S MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF486 The R F Line NPN SILICON RF POWER TRANSISTOR 40 W (PEP) - 30 MHz . . d e s ig n e d p rim a rily fo r ap p licatio n as a h ig h -p o w e r linear a m p lifie r fro m 1.5 to 30 M H z, in single s id eb an d m o b ile , m a rin e


    OCR Scan     		PDF MRF486 O-220AB b3b72S4 transistor Bf 966 MRF486 2204B 1N4997 221A-04 RF POWER TRANSISTOR NPN MOTOROLA LINEAR HF arco 429

    Current Probe Amplifier 134

    Abstract: schema television Tektronix 7603 bu134 w75c transistor bI 340
    Text: BU 134 NPN S ILIC O N TR A N S IS TO R , D IF F U S E D MESA T R A N S IS T O R N P N S IL I C I U M , M E S A D I F F U S E The B U 1 3 4 is a high speed, high voltage power transistor primarily intended fo r use in power supply chopper circuits in T V receivers.


    OCR Scan     		PDF CB-19 Current Probe Amplifier 134 schema television Tektronix 7603 bu134 w75c transistor bI 340

    11C6

    Abstract: No abstract text available
    Text: MOTOROLA •1 SEMICONDUCTOR TECHNICAL DATA H11C4 H11C5 H11C6 6-Pin DIP Optoisolators S C R Output T h e se d e vices c o n sist of gailiu m -arse n id e infrared em itting d io d e s optically c o u p le d to p ho to se n sitiv e silicon controlled rectifiers SCR}. T h e y are d e sig n e d for applications


    OCR Scan     		PDF IEC380/VDE0806, IEC435/VDE08 30A-02 11C6