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    onsemi 2SC3647T-TD-E

    TRANS NPN 100V 2A PCP
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    DigiKey 2SC3647T-TD-E Cut Tape 2,556 1
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    onsemi 2SC3647S-TD-E

    TRANS NPN 100V 2A PCP
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    DigiKey 2SC3647S-TD-E Digi-Reel 1,380 1
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    Mouser Electronics 2SC3647S-TD-E 1,131
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    Newark 2SC3647S-TD-E Cut Tape 3,685 1
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    Quest Components 2SC3647S-TD-E 603
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    TME 2SC3647S-TD-E 871 1
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    Wuhan P&S 2SC3647S-TD-E 4,000 1
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    Others 2SC3647S-TD-E

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    Chip 1 Exchange 2SC3647S-TD-E 5,200
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    2SC3647 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3647 Kexin High-Voltage Switching Applications Original PDF
    2SC3647 Sanyo Semiconductor High-voltage switching Original PDF
    2SC3647 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3647 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3647 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3647 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3647 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC3647 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SC3647-AB3-R Unisonic Technologies HIGH-VOLTAGE SWITCHING APPLICATIONS Original PDF
    2SC3647L-AB3-R Unisonic Technologies HIGH-VOLTAGE SWITCHING APPLICATIONS Original PDF
    2SC3647R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3647R Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SC3647S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3647S Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SC3647S-TD-E On Semiconductor 2SC3647 - High Voltage NPN Switching Transistor, hFE=140 to 280 Original PDF
    2SC3647T Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3647T Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SC3647T-TD-E On Semiconductor 2SC3647 - High Voltage NPN Switching Transistor, hFE=200 to 400 Original PDF

    2SC3647 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3647

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES „ * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs


    Original     		PDF 2SC3647 OT-89 2SC3647L 2SC3647G 2SC3647-x-AB3-R 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R QW-R208-039 2SC3647

    2SC1417

    Abstract: d250m
    Text: Ordering number:ENN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity, small-sized hybrid ICs.


    Original     		PDF ENN2006A 2SA1417/2SC3647 2SA1417/2SC3647] 25max 2SA1417 2SC1417 d250m

    smd marking cc

    Abstract: 2SC3647
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3647 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage


    Original     		PDF 2SC3647 Min400 100mA smd marking cc 2SC3647

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS  FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs


    Original     		PDF 2SC3647 OT-89 2SC3647G-x-AB3-R QW-R208-039 250mm

    2SA1417

    Abstract: 2SC3647 ITR03542
    Text: 2SA1417 / 2SC3647 注文コード No. N 2 0 0 6 C 三洋半導体データシート 半導体ニューズ No.N2006B とさしかえてください。 2SA1417 / 2SC3647 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用


    Original     		PDF 2SA1417 2SC3647 N2006B 2SA1417 250mm2 100mA 2SC3647 ITR03542

    2SA1417

    Abstract: 2SC3647
    Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original     		PDF 2SA1417 2SC3647 EN2006C 2SA1417 2SC3647

    2SC3647

    Abstract: 2SC3647-AB3-R 2SC3647L-AB3-R
    Text: UNISONIC TECHNOLOGIES CO., 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES 1 * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density,


    Original     		PDF 2SC3647 OT-89 2SC3647L 2SC3647-AB3-R 2SC3647L-AB3-R QW-R208-039 2SC3647 2SC3647L-AB3-R

    2SC1417

    Abstract: 2SC3647S-TD-E
    Text: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original     		PDF EN2006D 2SA1417 2SC3647 2SA1417/2SC3647 2SA1417 250mm2 2SC1417 2SC3647S-TD-E

    2SA1417

    Abstract: 2SC3647 2006-1
    Text: Ordering number:EN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time.


    Original     		PDF EN2006A 2SA1417/2SC3647 2SA1417/2SC3647] 2SA1417 2SA1417 2SC3647 2006-1

    Untitled

    Abstract: No abstract text available
    Text: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original     		PDF 2SA1417 2SC3647 EN2006D 2SA1417/2SC3647 2SA1417

    Untitled

    Abstract: No abstract text available
    Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original     		PDF 2SA1417 2SC3647 EN2006C 2SA1417

    npn switching transistor Ic 100mA

    Abstract: 2SC3647 IC free transistor transistor Ic 1A NPN
    Text: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS „ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs


    Original     		PDF 2SC3647 OT-89 2SC3647L 2SC3647G 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R QW-R208-039 250mm npn switching transistor Ic 100mA 2SC3647 IC free transistor transistor Ic 1A NPN

    Untitled

    Abstract: No abstract text available
    Text: 2SA1417 / 2SC3647 Ordering number : EN2006C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.


    Original     		PDF 2SA1417 2SC3647 EN2006C 2SA1417

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs


    Original     		PDF EN2006D 2SA1417/2SC3647 2SA1417 250mm2

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SC3647

    Abstract: FX507 ITR11412 ITR11413 ITR11414
    Text: 注文コード No. N 4 9 0 5 FX507 No. N4905 O3000 FX507 NPN エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 用途 ・液晶バックライトドライブ用。 特長 ・NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


    Original     		PDF FX507 N4905 O3000 FX507 2SC3647 750mm2 100mA 2SC3647 ITR11412 ITR11413 ITR11414

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2006A 2SA1417/2SC3647 sju y o i PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time. , Very small size making it easy to provide high-density, small-sized hybrid


    OCR Scan     		PDF 2SA1417/2SC3647 2SA1417 2SA1JH7/2SC3647

    tda 2038

    Abstract: 2SA417 2SA1417 2SC3647
    Text: O rd e rin g n u m b e r: EN 2006A 2SA1417/2SC3647 N o .2006A SA W O PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . Highbreakdown voltage and large current capacity. . Fastswitching time.


    OCR Scan     		PDF 2SA1417/2SC3647 2SA1417 250mm2 tda 2038 2SA417 2SA1417 2SC3647

    2SB1205

    Abstract: FX851
    Text: SANYO New Products Of New Package 5/6-pi n XP Seri es :FX type 2 SANYO new 5 /6 -p in XP packages a re in te rm ed ia te sized d e vices between SANYO PCP and TP packages and have high power cap a b ility . This packages lin e in clu d e s complex types of la rg e -c u rre n t sw itchin g t r a n s i s to r s , of a low s a tu ra tio n -v o lta g e t r a n s i s to r ( f a s t


    OCR Scan     		PDF B1121 SB30-03P B1302 SB20W03P D1628 0W03P 50202TR 2SB1205 FX851

    2SD1300

    Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
    Text: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.


    OCR Scan     		PDF O-126 T0-220AB 2SA164830 2SC4734 2SA1749 2SC4564 min2000 min4000 2SD894 2SD1153 2SD1300 transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN4905 FX507 N o.4905 N P N E p ita x ia l P la n a r Silicon T ra n sisto r SANYO 1 High-Current Switching Applications A pplications • LCD b ack lig h t drive F eatu res • C om posite type w ith 2 N P N tra n sisto rs contained in one package, fa c ilita tin g hig h -d en sity m ountin g .


    OCR Scan     		PDF EN4905 FX507 2SC3647,

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124