B 435 TRANSISTOR Search Results

"P-Channel JFET"

Abstract: CMPF5460 CMPF5461 CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"
Contextual Info: Datasheet r o w 1fli— • l M l sem iconductor worp. h m a S ^ b a mMm m« A CMPF5460 CMPF5461 CMPF5462 mm SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors

t125 switch

Abstract: BUK437-600B
Contextual Info: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

B634X

Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
Contextual Info: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast

AB marking code diode

Abstract: BFR101B BFR101A
Contextual Info: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated

transistor d325

Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

T0-126 pin configuration

Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V

d433

Abstract: 8D437 B0435 BD436 BD437 BD435-25 BD439 BD441 BD433-25 BD433
Contextual Info: P h ilip s S e m ico n d u cto rs _ Prelim inary sp ecification Silicon epitaxial-base transistors D ESCRIPTIO N Q UICK R E F E R E N C E DATA PINNING • TO-126 SOT32 DESCRIPTION 1 emitter 2 collector 3 base SYM BOL V cE S PARAM ETER collector-emitter voltage

D441

Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector

bd435 fairchild

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

tfk 434

Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A
Contextual Info: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung

BG433

Abstract: Bo435 vertical tv deflexion BD 435 sus 433
Contextual Info: BD433 BD435 NPN S IL IC O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS S IL IC IU M NPN. BASE E P IT A X IE E Compì, o f BD 4 3 4 , BO 436 P R E L IM IN A R Y D A T A NOTICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

8043

Abstract: 33T4 BD433 BD434 BD435 BD436 BD437 BD438 DDD121D
Contextual Info: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS M edium pow er linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 DIM MIN. MAX. ‘V A 7.4

BD435

Abstract: transistor bd435 BD433 BD434 BD436 BD437 BD438
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD433 : BD435 : BD437 Collector Emitter Voltage : BD433

Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage S ym bol BD433 R a tin g VcBO BD435

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BD437

Abstract: 434 NPN transistors BD433 BD434 BD435 BD436 BD438 ic 438
Contextual Info: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications.

Contextual Info: FAIRCHILD SEMICONDUCTOR May 1996 tm NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, - high cell density, DMOS technology. This very high

434 NPN transistors

Abstract: BD435 transistor BD435 BD433 BD434 BD436 BD437 BD438 SGS-THOMSON 435
Contextual Info: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in

geiger tube

Abstract: Geiger geiger apd pulse metal detector A0803 helium gas sensor module TO8 package photomultiplier SPMMicro3035x13 pmt amplifier circuit
Contextual Info: SPMMicro Series High Gain APD Overview cell in the SPM are varied for PDE optimization and optimal dynamic range. SPMMicro detectors come in a variety of pin package formats according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types

OPB 813

Contextual Info: ^ O TO RO LA SEMICONDUCTOR TECHNICAL DATA Order this document by OPB 86O/D Advance Information OPB86O OPB870 Slotted O ptical Sw itches Transistor Output These slotted switches each consist of a gallium arsenide infrared light emitting diode facing a silicon NPN phototransistor in a plastic housing. The devices are separated by a

Contextual Info: r r 7 SGS-THOMSON Ä 7 # RaoeifäOlILIßra «! BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec