Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AVALANCHE RUGGED TECHNOLOGY Search Results

    AVALANCHE RUGGED TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-000.5
    		Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet
    CS-SATDRIVEX2-001
    		Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002
    		Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SASDDP8282-001
    		Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet
    CS-SASSDP8282-001
    		Amphenol Cables on Demand Amphenol CS-SASSDP8282-001 29 position SAS to SATA Drive Connector Single Data Lane Cable 1m Datasheet

    AVALANCHE RUGGED TECHNOLOGY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUZ72A

    Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		BUZ72A 100oC 175oC O-220 BUZ72A PDF

    STP6N60FI

    Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STP6N60FI 100oC ISOWATT220 STP6N60FI PDF

    STD2N50

    Contextual Info: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STD2N50 100oC O-251) O-252) O-251 O-252 STD2N50 PDF

    STD3N30

    Contextual Info: STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 300 V < 1.4 Ω 3A TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STD3N30 100oC O-251) O-252) O-251 STD3N30 PDF

    STP20N06

    Abstract: STP20N06FI
    Contextual Info: STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI VDSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP20N06 STP20N06FI 100oC 175oC O-220 ISOWATT220 STP20N06 STP20N06FI PDF

    STD3N30L

    Contextual Info: STD3N30L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD3N30L 300 V < 1.4 Ω 3A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.15 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STD3N30L 100oC O-251) O-252) STD3N30L PDF

    STD4N25

    Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STD4N25 100oC O-251) O-252) STD4N25 PDF

    STD12N05

    Abstract: STD12N06
    Contextual Info: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 STD12N05 STD12N06 PDF

    STB30N10

    Abstract: airbag
    Contextual Info: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 VDSS RDS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		STB30N10 100oC O-263) O-263 STB30N10 airbag PDF

    Contextual Info: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STB5NA80 O-262) O-263) O-263 PDF

    IRFBC30

    Abstract: IRFBC30 150 E 4315A
    Contextual Info: IRFBC30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 4.3 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		IRFBC30 100oC O-220 IRFBC30 IRFBC30 150 E 4315A PDF

    STD9N10L

    Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY


    Original     		STD9N10L 100oC 175oC O-252) O-251 O-252 STD9N10L PDF

    Contextual Info: STK4N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N30 • ■ ■ ■ ■ V DSS R DS on ID 300 V < 1.4 Ω 4.2 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STK4N30 100oC OT-82 OT-194 PDF

    MTP6N60

    Abstract: MTP6N6 12 v smps
    Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		MTP6N60 100oC O-220 MTP6N60 MTP6N6 12 v smps PDF

    STP3N100

    Abstract: STP3N100FI
    Contextual Info: STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N100 STP3N100FI • ■ ■ ■ ■ ■ VDSS R DS on ID 1000 V 1000 V <5Ω <5Ω 3.5 A 2A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP3N100 STP3N100FI 100oC O-220 ISOWATT220 STP3N100 STP3N100FI PDF

    MTP6N6

    Abstract: MTP6N60
    Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		MTP6N60 100oC O-220 MTP6N6 MTP6N60 PDF

    STD17N05

    Abstract: STD17N06
    Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06 PDF

    P-032B

    Abstract: P032B STK4N25
    Contextual Info: STK4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N25 • ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STK4N25 100oC OT-82 OT-194 P-032B P032B STK4N25 PDF

    STP20N10

    Contextual Info: STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STP20N10 100 V < 0.12 Ω 20 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP20N10 100oC 175oC O-220 STP20N10 PDF

    STD3N30

    Contextual Info: STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 300 V < 1.4 Ω 3A TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STD3N30 100oC O-251) O-252) STD3N30 PDF

    STD3N25

    Contextual Info: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V <2Ω 3A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STD3N25 100oC O-251) O-252) STD3N25 PDF

    MTP6N60

    Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		MTP6N60 100oC O-220 MTP6N60 PDF

    STP15N06L

    Abstract: STP15N06LFI
    Contextual Info: STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP15N06L STP15N06LFI VDSS R DS on ID 60 V 60 V < 0.15 Ω < 0.15 Ω 15 A 10 A TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP15N06L STP15N06LFI 100oC 175oC O-220 ISOWATT220 STP15N06L STP15N06LFI PDF

    STP33N10

    Abstract: STP33N10FI 3318A
    Contextual Info: STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI VDSS R DS on ID 100 V 100 V < 0.06 Ω < 0.06 Ω 33 A 18 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP33N10 STP33N10FI 100oC 175oC O-220 ISOWATT220 STP33N10 STP33N10FI 3318A PDF