Untitled
Abstract: No abstract text available
Text: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
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APT30M85SVR
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Untitled
Abstract: No abstract text available
Text: APT30M85BVFR 300V POWER MOS V 40A 0.085Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M85BVFR
O-247
O-247
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APT30M85BVRG
Abstract: No abstract text available
Text: APT30M85BVR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 40A 0.085Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M85BVR
O-247
O-247
APT30M85BVRG
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Untitled
Abstract: No abstract text available
Text: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
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APT30M85SVR
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Untitled
Abstract: No abstract text available
Text: APT30M85BVFR 300V POWER MOS V 40A 0.085Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M85BVFR
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: APT30M85BVR 40A 0.085Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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APT30M85BVR
O-247
O-247
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SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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Untitled
Abstract: No abstract text available
Text: APT30M85BVFR A dvanced P ow er T e c h n o lo g y 9 300V POWER MOSV 40A 0.085Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M85BVFR
O-247
APT30M85BVFR
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o lo g y APT30M85BNFR APT3010BNFR GpWER MOS UM 300V 40A 300V 35A 0.085Q 0.100Q AVALANCHE RATED FREDFET N -C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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APT30M85BNFR
APT3010BNFR
APT30M85/301OBNFR
O-247AD
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IS-31
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y 9 APT30M85BNFR APT301OBNFR 300V 40A 0.085Q 300V 35A 0.100Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS M AXIM UM RATING S Parameter APT30M85BNFR DSS Drain-Source Voltage
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APT30M85BNFR
APT301OBNFR
APT3010BNFR
APT3010BNFR
O-247AD
IS-31
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Untitled
Abstract: No abstract text available
Text: A dvanced APT30M85BVR pow er Te c h n o lo g y 300V 40A 0.085Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT30M85BVR
O-247
019i522
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Untitled
Abstract: No abstract text available
Text: APT30M85BVFR A dvanced po w er Te c h n o l o g y POWER MOS V‘ 300V 40A 0.085Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M85BVFR
O-247
APT30M85BVFR
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APT30M85BNR
Abstract: LSE 405 APT3010BNR APT30M85 016Q
Text: A dvanced P o w er Te c h n o lo g y O D O S APT30M85BNR 300V APT3010BNR 300V POWER MOS IV® 40A 0.0850 35A 0.100Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M A XIM U M R ATING S Symbol All Ratings: T c = 25°C unless otherwise specified.
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APT30M85BNR
APT3010BNR
Ava23
O-247AD
LSE 405
APT30M85
016Q
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Untitled
Abstract: No abstract text available
Text: ADW NCED P ow er Te c h n o lo g y O D APT30M85BNR 300V APT3010BNR 300V O s POWER MOS IV® 40A 0.0850 35A 0.100a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.
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APT30M85BNR
APT3010BNR
APT30M85BNR
APT30M85/301OBNR
-247A
DD0143R
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Untitled
Abstract: No abstract text available
Text: APT30M85BVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOSV i 40A 0.085Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT30M85BVFR
O-247
MIL-STD-750
O-247AD
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Untitled
Abstract: No abstract text available
Text: A dvanced po w êer Te c h n o l o g y • APT30M85BNFR APT3010BNFR POWER MOS IV' 300V 40A 0.08512 300V 35A 0.100Í2 A V A LA N C H E RATED FR EDFET N -C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol ^D S S Parameter APT30M85BNFR
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APT30M85BNFR
APT3010BNFR
APT3010BNFR
APT30M85/3010BNFR
100mS
O-247AD
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p jfet
Abstract: No abstract text available
Text: • R A dvanced W .\A APT30M85BVR pow er Te c h n o l o g y “ 300V 40a o.ossq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M85BVR
O-247
p jfet
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2511PE
Abstract: KD LD
Text: O A D d v a n c e d Pow er T e c h n o lo g y • O APT30M85BNR 300V APT3010BNR 300V S 40A 0.085Q 35A 0.100Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.
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APT30M85BNR
APT3010BNR
APT30MB5BNR
APT3010BNR
2511PE
KD LD
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437T
Abstract: No abstract text available
Text: APT30M85BVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOSV 40A 0.085Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT30M85BVFR
O-247
APT30M85BVFR
MIL-STD-750
00A/HS.
O-247AD
437T
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APT30M85BNR
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y * APT30M85BNR 300V APT3010BNR 300V POWER MOS IV' 40A 0.0850 35A 0.1000 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D All Ratings: Tc = 25°C unless otherwise specified.
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APT30M85BNR
APT3010BNR
O-247AD
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Untitled
Abstract: No abstract text available
Text: APT30M85BVR A dvanced P o w er Te c h n o l o g y 300V 40A 0.085Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT30M85BVR
O-247
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t469
Abstract: APT30M85BVR
Text: APT30M85BVR • r A dvanced W m P ow E R M Te c h n o lo g y ' 300V 40A 0.085Í2 POWER MOS V Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT30M85BVR
O-247
APT30M85BVR
MIL-STD-750
O-247AD
t469
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Untitled
Abstract: No abstract text available
Text: O A D d v a n c e d P ow er T e c h n o lo g y O APT30M85BNR 300V APT3010BNR 300V S Q * W E R M O S m 40A 0.085Q 35A 0.100Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATINGS S ym bol V DSS >D *DM V GS V GSM PD L ’^S T G
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APT30M85BNR
APT3010BNR
T3010B
APT30M85/3010BNR
-247A
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nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700
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APT1201R6BVR
APT1201R5BVR
APT1001RBVR
APT10086BVR
APT8075BVR
APT8065BVR
APT8056BVR
APT6040BVR
APT6035BVR
APT6030BVR
nt 6600 G
APT60M75JVR
APT30M40JVR
APT20M45B
APT50M50JVR
apt12080jvr
130-131
apt5014lvr
APT5020BVFR
apt40m70jvr
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