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    APT20M11 Price and Stock

    Microchip Technology Inc APT20M11JVR

    MOSFET N-CH 200V 175A ISOTOP
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    DigiKey APT20M11JVR Tube 5 1
    • 1 $72.33
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    Verical APT20M11JVR 20 10
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    Microchip Technology Inc APT20M11JVR Tube 20 Weeks
    • 1 $72.33
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    Onlinecomponents.com APT20M11JVR
    • 1 $69.09
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    NAC APT20M11JVR Tube 5
    • 1 $67.11
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    Microchip Technology Inc APT20M11JLL

    MOSFET N-CH 200V 176A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT20M11JLL Tube 10
    • 1 -
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    Avnet Americas APT20M11JLL Tube 20 Weeks 10
    • 1 -
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    Mouser Electronics APT20M11JLL
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    Newark APT20M11JLL Bulk 10
    • 1 $70.74
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    Microchip Technology Inc APT20M11JLL Tube 20 Weeks
    • 1 $70.74
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    Onlinecomponents.com APT20M11JLL
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    • 1 $67.54
    • 10 $60.43
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    Microchip Technology Inc APT20M11JVFR

    MOSFET N-CH 200V 175A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT20M11JVFR Tube 10
    • 1 -
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    Avnet Americas APT20M11JVFR Tube 26 Weeks 10
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    Mouser Electronics APT20M11JVFR 10
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    Newark APT20M11JVFR Bulk 10
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    Microchip Technology Inc APT20M11JVFR Tube 26 Weeks
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    NAC APT20M11JVFR Tube 4
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    Microchip Technology Inc APT20M11JFLL

    MOSFET N-CH 200V 176A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT20M11JFLL Tube 10
    • 1 -
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    Mouser Electronics APT20M11JFLL
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    Microchip Technology Inc APT20M11JFLL Tube 26 Weeks
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    NAC APT20M11JFLL Tube 4
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    APT20M11 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M11JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT20M11JFLL Unknown Power MOS V, 200V 176A, MOS-FET N-Channel enhanced Original PDF
    APT20M11JLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT20M11JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT20M11JVFR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 175A SOT-227 Original PDF
    APT20M11JVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M11JVFR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 175A SOT-227 Original PDF
    APT20M11JVR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 175A SOT-227 Original PDF
    APT20M11JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M11JVR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 175A SOT-227 Original PDF

    APT20M11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JVR 200V 175A 0.011Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M11JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JVFR 200V POWER MOS V 0.011Ω 175A FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M11JVFR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JFLL 200V 176A 0.011Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JFLL OT-227 PDF

    APT20M11JLL

    Abstract: No abstract text available
    Text: APT20M11JLL 200V 176A 0.011Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JLL OT-227 APT20M11JLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JLL OT-227 PDF

    APT20M11JFLL

    Abstract: No abstract text available
    Text: APT20M11JFLL 200V 176A 0.011W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package


    Original     		APT20M11JFLL OT-227 MIL-STD-750 APT20M11JFLL PDF

    APT20M11JVFR

    Abstract: No abstract text available
    Text: APT20M11JVFR 200V POWER MOS V 0.011Ω 175A FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M11JVFR OT-227 E145592 APT20M11JVFR PDF

    APT20M11JLL

    Abstract: No abstract text available
    Text: APT20M11JLL 200V 176A 0.011W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		APT20M11JLL OT-227 APT20M11JLL PDF

    C 704 diode

    Abstract: No abstract text available
    Text: APT20M11JFLL 200V 176A 0.011Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JFLL C 704 diode PDF

    APT20M11JFLL

    Abstract: No abstract text available
    Text: APT20M11JFLL 200V 176A 0.011Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JFLL OT-227 APT20M11JFLL PDF

    APT20M11JLL

    Abstract: 2815 rc
    Text: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JLL OT-227 APT20M11JLL 2815 rc PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JVFR 200V POWER MOS V 0.011Ω 175A FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M11JVFR OT-227 E145592 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series PDF

    APT20M11JVR

    Abstract: No abstract text available
    Text: APT20M11JVR A dvanced W /Æ P O W E R Te c h n o lo g y ' • R 200V 175a 0.01 i q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT20M11JVR OT-227 APT20M11JVR E145592 PDF

    apt20m11jvfr

    Abstract: No abstract text available
    Text: APT20M11JVFR A dvanced P o w er Te c h n o l o g y 200V POWER MOS V 175A 0.011 £2 FREDFETI Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V'"


    OCR Scan     		APT20M11JVFR OT-227 APT20M11JVFR MIL-STD-750 00A/US, 15CPC, PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JVFR A dvanced P ow er Te c h n o l o g y ' 200V POWER MOS V‘ 175A 0.011Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT20M11JVFR OT-227 APT20M11 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JVR A dvanced P o w er Te c h n o l o g y 200V 175A 0.011 £2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT20M11JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y ' APT20M11JVR 200V 175A 0.011Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT20M11JVR OT-227 APT20M11JVR MIL-STD-750 OT-227 PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr PDF