Untitled
Abstract: No abstract text available
Text: HY62C256 HYUNDAI S EM IC O N D U C TO R 32KX8-KC CMOS SRAM M 231202B-APR91 FEATURES DESCRIPTION • High speed— 85/100/120/150 ns m ax. The HY62C256 is a high speed low power, 32,768 words by 8-bit CM OS static RAM fabri cated using HYUNDAI’S high performance
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HY62C256
32KX8-KC
231202B-APR91
HY62C256
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Untitled
Abstract: No abstract text available
Text: A J • ■ HY62256A H Y U N o n i m x M lt CMOS SRAM s e m ic o n d u c t o r M241201B-APR91 DESCRIPTION FEATURES The HY62256A is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabricated using HYUNDAI’S high perfor m ance twin tub CM OS process. This high
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HY62256A
M241201B-APR91
HY62256A
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58256
Abstract: 58256a
Text: HYUNDAI V i SEMICONDUCTOR HYM58256A 256KX 8-Bit C M O S DRAM MODULE M461201A-APR91 DESCRIPTION FEATURES The HYM58256A is a 256K words by 8 bits dynamic RAM module and consists of Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ mounted on a 30 pin glassepoxy printed circuit board. 0.22|iF decoupling
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HYM58256A
256KX
M461201A-APR91
HYM58256A
HY534256J
HYM58256AM
HYM58256AP
HYM58256A-60
HYM58256A-70
HYM58256A-80
58256
58256a
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Altera ep310
Abstract: No abstract text available
Text: •JA HYUNDAI vi S EM IC O N D U C TO R H Y lfir V S 1 1 1 1 9 CMOS EEPLD L111202A— APR91 DESCRIPTION FEATURES The HY18CV8 is a CM OS Electrically Eras able Program mable Logic Device EEPLD that provides a high performance ; low power, reprogrammable and architecturally flexible
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L111202Aâ
APR91
HY18CV8
HY18CV8
Altera ep310
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Untitled
Abstract: No abstract text available
Text: ,Aj Hyundai ' f i HY531000 S E M IC O N D U C T O R 1 1 S ™ , M171202A-APR91 DESCRIPTION The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynamic random ac cess memory. Fabricated with the HYUNDAI CM OS process, the HY531000 offers a fast
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HY531000
M171202A-APR91
HY531000
576X1
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UAA 190
Abstract: AC613 HY51C
Text: A ] • ■ H H Y U N D A I SEMICONDUCTOR Y 5 1 C 1 0 0 0 iMxi-œt c m o s dram M131202B-APR91 DESCRIPTION FEATURES T he H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic random a c cess m em ory. F abricated w ith the H Y U N D A I
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M131202B-APR91
HY51C1000
576X1
HY51C1000during
HY51C
UAA 190
AC613
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Untitled
Abstract: No abstract text available
Text: HY6116A .V« *H Y UNDAI SEMICONDUCTOR M211201B-APR91 FEATURES DESCRIPTION The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri cated using high performance CM OS process technology. This high reliability process cou pled with innovative circuit design techniques,
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HY6116A
M211201B-APR91
HY6116A
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Untitled
Abstract: No abstract text available
Text: •<H gJSÄSÄJI H Y M 5C 9256 256KX 9-Bit CMOS DRAM MODULE M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynam ic RAM m odule and consists o f nine HY53C256LF Fast Page m ode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin glass-epoxy printed circuit board. 0.22pF de
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256KX
M421202A-APR91
HYM5C9256
HY53C256LF
5C9256M
5C9256P
HYM5C9256
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534256
Abstract: No abstract text available
Text: , ¿ 4 M 'à HY534256 1 H y u n d a i SEM ICONDUCTOR M181202A-APR91 FEATURES DESCRIPTION • Low power dissipation - Operating current, 100ns : 60mA max. - TTL standby current : 2mA(max.) -CM OS standby current : 1mA(max.) • Read-Modify-Write capability
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HY534256
M181202A-APR91
100ns
HY534256
534256
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CRL4
Abstract: s8100
Text: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10
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G0003flfl
M431201B-APR91
HYM581000
HY531000J
HYM581000M
HYM581000P
HYM581000-60
S81000-70
YM581000-80
36l--
CRL4
s8100
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HYM591
Abstract: HY531000J
Text: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin
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M431201A-APR91
HYM591000
HY531000J
22jiF
HYM591000M
HYM591000P
HYM591000M/P-60
HYM591000M/P-70
HYM591000M/P-80
HYM591000M/P-10
HYM591
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hyundai tv hy 22 f circuit
Abstract: c 144 ESS HYM5C9256
Text: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin
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M421202A-APR91
HYM5C9256
HY53C256LF
22jiF
HYM5C9256M
HYM5C9256P
HYM5C9256-70
HYM5C9256-80
HYM5C9256-10
HYM5C9256-12
hyundai tv hy 22 f circuit
c 144 ESS
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HY93C46
Abstract: NMC9346
Text: « Hyundai SEMICONDUCTOR M* , HY93C46 M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem ory organized as 64 registers o f 16 bits each. Data can be written into or read out serially by most microprocessors or microcontrollers.
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HY93C46
M311201B-APR91
HY93C46
024-bit
16-Bit
NMC9346
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Untitled
Abstract: No abstract text available
Text: 3 • ■ H y u n d a i SEMICONDUCTOR H 5 3 C Y 2 5 6 256K.X i-Kt c m o s d r a m M111201A-APR91 DESCRIPTION FEATURES The HY53C256 is a high speed 262,144X1 bit CM OS dynamic random access memory. Fabricated with HYUNDAI CM OS techno logy, the HY53C256 offers a fast page mode for
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M111201A-APR91
HY53C256
144X1
HY53C256L,
HY53C256L
100ns
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HY6264 RAM
Abstract: No abstract text available
Text: HY6264 HYUNDAI • ■ SEMICONDUCTOR »k x 8« S ilS M 2212 0 1 B-APR91 DESCRIPTION FEATURES The HY6264 is a high speed, low power 8,192 words by 8-bit CM OS static RAM fabrica ted using high performance CM OS process te chnology. This high reliability process coupled
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HY6264
B-APR91
HY6264
HY6264 RAM
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Untitled
Abstract: No abstract text available
Text: « ÏH IS ft! H 256KX8-HI Y M C5M OÇS DRAM 8 2MODULE 56 M 411202A-APR91 DESCRIPTION FEATURES The HYM5C8256 is a 256K words by 8 bits dynamic RAM m odule and consists of eight HY53C256LF Fast Page mode CMOS DRAM in 18 pin PLCC package mounted on a 30 pin glass-epoxy printed circuit board. 0.22|iF de
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256KX8-HI
11202A-APR91
HYM5C8256
HY53C256LF
HYM5C8256M
HYM5C8256P
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100PF
Abstract: No abstract text available
Text: ’< M « H y u n d a i SEMICONDUCTOR „ * HY93C46 M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem ory organized as 64 registers of 16 bits each. D ata can be written into or read out serially by most microprocessors or microcontrollers.
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HY93C46
M311201B-APR91
HY93C46
024-bit
100PF
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Untitled
Abstract: No abstract text available
Text: HY93C46 •HYUNDAI SEMICONDUCTOR 64 X 16-Bit CM OS SERIAL EE PROM M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem ory organized as 64 registers o f 16 bits each. D ata can be written into or read out serially by most microprocessors or microcontrollers.
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HY93C46
024-bit
16-Bit
HY93C46
PACKAGE-300
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HY6116A-10
Abstract: HY6116A
Text: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri cated using high performance CM OS process technology. This high reliability process cou
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M211201B-APR91
HY6116A
500mV
OQGG414
T-46-23-12
HY6116A-10
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Untitled
Abstract: No abstract text available
Text: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin
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HYM591000
M431201A-APR91
HYM591000
HY531000J
HYM591000M
HYM591000P
HYM591000M/P-60
HYM591000M/P-70
HYM591000M/P-80
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Untitled
Abstract: No abstract text available
Text: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast
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HY51C1000
M131202B-APR91
HY51C1000
576X1
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Untitled
Abstract: No abstract text available
Text: « }J • ■ ^ ,c uo ,ndudctao Ì SEMICONDUCTOR H Y im 5 8 1 0 0 0 M x8 -K t c m o s d r a m m o d u l e M431201B-APR91 DESCRIPTION The HYM581000 is a 1M words by 8 bits dy namic RAM module and consists of eight HY531000J Fast Page mode CM OS DRAM in 20/26 pin SOJ package m ounted on a 30 pin
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431201B-APR91
HYM581000
HY531000J
HYM581000M
HYM581000P
HYM581000
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Untitled
Abstract: No abstract text available
Text: DWG NO. DO NOT DIMENSIONS REQ. PER ASSY 19,8 ITEM TRIC SCALE IN mm. 3rd ANGLE PROJECTION MATERIAL DESCRIPTION FINISH 4,3 *0,2 DIA. y CORTE A-A CORTE B-B SECTI ON SECTI ON <Â\ - RE30BINAR ¡NT£3CALA.':D0 COM PAPEL- R E E L I N G WI T H PAPHR-INTERLEÀVE.
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PP-94
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LH5160N
Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.
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LH5912
LH5914are
LH5911
LH5914
/IDT7134
16Kx18
64Kx18
LH5160N
LH5115
LH5118D
LH5160
LH5160D
LH521000
LH5167
LH52252A
LH5114H
LH5911-55
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