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    58256 Search Results

    58256 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1EV58256BSCNBI#B2 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    R1EV58256BDANBI#B0 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    R1EV58256BSCNBI#S0 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    R1EV58256BTDRBI#B0 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
    R1EV58256BTCNBI#B0 Renesas Electronics Corporation EEPROM Visit Renesas Electronics Corporation
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    58256 Price and Stock

    RAF Electronic Hardware 2058-256-AL

    HEX STANDOFF #2-56 ALUM 9/16"
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    DigiKey 2058-256-AL Bulk 1,040 1
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    Mouser Electronics 2058-256-AL
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    Newark 2058-256-AL Bulk 1,856 556
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    RS 2058-256-AL Bulk 9 Weeks 595
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    Master Electronics 2058-256-AL 324
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    Magnetics 0058256A2

    FERRITE CORE TOROID 35NH HIGH FL
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    DigiKey 0058256A2 Bulk 331 1
    • 1 $17.43
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    RAF Electronic Hardware 2058-256-AL-7

    HEX STANDOFF #2-56 ALUM 9/16"
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    DigiKey 2058-256-AL-7 Bulk 187 1
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    Mouser Electronics 2058-256-AL-7 47
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    Phoenix Contact 1582563

    PNL FEED-THRU QUICKON CONN 4+PE
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    DigiKey 1582563 Bulk 1
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    Master Electronics 1582563
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    Sager 1582563 1
    • 1 $16.6
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    • 100 $14.75
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    SICK AG 1058256

    SENSOR PROXIMITY 300MM PNP
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    DigiKey 1058256 Bulk 1
    • 1 $549.04
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    58256 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    582561-1 TE Connectivity Connectors, Interconnects - Card Edge Connectors - Housings - CONN CARDEDGE HSG 86POS .100 BLU Original PDF
    582567-4 TE Connectivity Card Edge Connectors - Housings, Connectors, Interconnects, CONN CARDEDGE HSG DUAL 36POS Original PDF

    58256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAGNETICS 77439-A7

    Abstract: 55930-A2 55117 core magnetics 77894-A7 77083-A7 55050-A2 55083-A2 Core 55120-A2 55930a2 58930-a2
    Text: Powder Cores • Molypermalloy ■ High Flux ■ Kool Mµ Since 1949, MAGNETICS, a division of Spang & Company, has been a leading world supplier of precision, high quality, magnetic components and materials to the electronics industry. Applications for


    Original
    PDF

    MPP 55930A2

    Abstract: 55050-A2 77083-A7 55120-A2 77894-A7 55930a2 77050-A7 55310-A2 58930-a2 77439-A7
    Text: 0.140” 0.070” 3.56mm OD 1.78mm ID x 1.52mm HT 0.060” Core Dimensions after finish O.D. (max.) I.D. (min) HT. (max.) 4.19 mm 1.27 mm 2.16 mm Permeability (µ) 0.165 in 0.050 in 0.085 in AL +- 8% MPP 13 16 19 26 31 33 36 42 62 55140-AY 55139-AY 55138-AY


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    PDF 55140-AY 55139-AY 55138-AY 55134-AY 55137-AY 55135-AY MPP 55930A2 55050-A2 77083-A7 55120-A2 77894-A7 55930a2 77050-A7 55310-A2 58930-a2 77439-A7

    resistor 4.7k ohm

    Abstract: resistor* 4.7k ohm resistor 47k ohm SP5000 spectron KTY81 "Signal Conditioning" KTY81-120 SA40011 582567
    Text: SA40011 – Dual Axis Signal Conditioning Module The SA40011- Dual Axis Signal Conditioning Module is a bipolar DC input/output operated device, specifically designed to interface directly with the entire line of SP5000 Series Dual Axis Tilt Sensors. This PC board mountable module internally


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    PDF SA40011 SA40011- SP5000 SA40011 SDS-106-0405 resistor 4.7k ohm resistor* 4.7k ohm resistor 47k ohm spectron KTY81 "Signal Conditioning" KTY81-120 582567

    d879

    Abstract: block diagram of VCD and its functions d879 transistor B1302 block diagram of VCD transistor D879 D1012 LB8118M Sanyo battery 58255
    Text: Ordering number: EN*5825 Monolithic Digital IC LB8118M Actuator Driver for Portable CD Players Preliminary Overview The LB8118M is an actuator driver IC designed for portable CD players that operate at 2.4 V two Ni-Cd batteries or 3.0 V (two dry cells). Because the four-channel driver control outputs


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    PDF LB8118M LB8118M 3148-QFP44MA LB8118M] QIP44MA d879 block diagram of VCD and its functions d879 transistor B1302 block diagram of VCD transistor D879 D1012 Sanyo battery 58255

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D B 7 ^ 4 1 4 5 Q010402 4 58256BN DRAM MODULES u M U 5 -n 25 6K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN Is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­


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    PDF Q010402 KMM58256BN 58256BN 44C256BJ 20-pin 30-pin 22fiF 130ns 58256BN-

    Untitled

    Abstract: No abstract text available
    Text: 58256BN DRAM MODULES 2 5 6 K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­ sung KM M 58256BN consist of two 1M bit DRAMs


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    PDF KMM58256BN 58256BN 44C256BJ 20-pin 30-pin 58256BN- 130ns 150ns

    cxk58256pm

    Abstract: CL 2181 ic CXK58256M CXK58256P gal3 CL 2181 CXK58256 DIP-28P-04
    Text: SONY 58256P/M 0 0 3 2 K-word X 8 bit High Speed CMOS Static RAM Package O utline Description The 58256P/M is a 262.144 bits high speed CMOS static RAM organized as 32 ,7 6 8 w ords by 8 bits and operates from a single 5V supply. The C X K 58256P /M is suitable fo r use in high


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    PDF CXK58256P/M 32K-word CXK58256P/M 50juW 100ns/120ns/1 -10U/12iyi5L cxk58256pm CL 2181 ic CXK58256M CXK58256P gal3 CL 2181 CXK58256 DIP-28P-04

    44C256BJ

    Abstract: O-256K KMM58256BN
    Text: 58256BN DRAM MODULES 256KX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­ sung KM M 58256BN consist of two 1M bit DRAMs KM 44C256BJ - 2 5 6 K X 4 in 20-pin SOJ packages


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    PDF KMM58256BN 256KX8 58256BN 44C256BJ 20-pin 30-pin KMM58256BN- O-256K KMM58256BN

    58256

    Abstract: 58256a
    Text: HYUNDAI V i SEMICONDUCTOR 58256A 256KX 8-Bit C M O S DRAM MODULE M461201A-APR91 DESCRIPTION FEATURES The 58256A is a 256K words by 8 bits dynamic RAM module and consists of Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ mounted on a 30 pin glassepoxy printed circuit board. 0.22|iF decoupling


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    PDF HYM58256A 256KX M461201A-APR91 HYM58256A HY534256J HYM58256AM HYM58256AP HYM58256A-60 HYM58256A-70 HYM58256A-80 58256 58256a

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    Untitled

    Abstract: No abstract text available
    Text: ACCUTEK MICROCIRCUIT 0107^7 3 1 ET D OQOOOCH fi ACU T-46-23-Î7 II AK59256S/AK59256G 262,144 x 9 bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT The Accutek AK59256 high density memory module is a random access memory organized in 256K x 9 bit words. The


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    PDF T-46-23-Ã AK59256S/AK59256G AK59256

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    odq1

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC E3E D 7Tfcj 4145 0 0 0 Ô 2 D ? KM M48256/KM 58256 7 MEMORY MODULES 256K x8 Bit DRAM SIP and SIMM Memory Modules T-46,'23-ft FEATURES GENERAL DESCRIPTION • 262,144 x 8-bit Organization • Performance range: The Samsung KMM48256 and 58256 are


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    PDF M48256/KM M58256 KMM48256-12 KMM58256-12 KMM48256-15 KMM58256-15 230ns 260ns 260ns odq1

    ZB35K

    Abstract: 6X6C SAK70
    Text: Connection elements ANS top ANS bottom Clamping yoke KLBU 4.13.5 .auL. In order to connect N or earth conductors at a central location, it is advantageous to use the ZB clamping yoke together with the 10x3 busbars. The clamping yokes can be moved on the


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    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    554103-1

    Abstract: No abstract text available
    Text: Interconnection Systems selection Guide 82750 Revised 7-95 Miniature Ribbon Connector System CHAMP CHAMP IDC Connectors (Continued) CHAMP Latch Low-Profile Connectors Product Facts • Ready to use connectors— strain relief covers preassem­ bled to connector bodies


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