Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AOA11 Search Results

    AOA11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2332 eprom

    Abstract: PIN-20 IC DIAGRAM 2332 rom 2732A eprom
    Text: TMS2332 4096-WORD BY 8-BIT READ-ONLY MEMORY SEPTEMBER 1984 - REVISED NOVEMBER 1985 4 0 9 6 X 8 Organization N PACKAGE All Inputs and Outputs TTL Compatible TOP VIEW A 7 C 1 ^ 2 4 3 v Cc A6£ 2 23 3 A 8 A5 £ 3 22 > 9 Fully Static (No Clocks. No Refresh)


    OCR Scan     		TMS2332 4096-WORD 2332 eprom PIN-20 IC DIAGRAM 2332 rom 2732A eprom PDF

    Untitled

    Abstract: No abstract text available
    Text: SM 64C16, SM J64C16 4096 WORD BY 4-BIT STATIC RAMS MARCH 1 98 7 —REVISED NOVEMBER 1987 Common I/O JO PACKAGE TOP VIEW • Military Temperature Range . . . - 5 5 ° C to 125°C (M Suffix) • Fast Static Operation • Battery Back-Up Operation . . . 2-Volt Data


    OCR Scan     		64C16, J64C16 64C16-35 64C16-45 SM64C16, PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70


    OCR Scan     		TMS416160, TMS416160P 576-WORD 16-BIT SMKS660-DECEMBER 416160/P-60 416160/P-70 416160/P-80 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		THMY6480D1BEG-80L THMY6480D1BEG 608-word 64-bit TC59S6408BFTL 64-bit PDF

    TC516540

    Abstract: No abstract text available
    Text: TO SHIBA THM72V1635ATG-4.-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAM IC RAM MODULE DESCRIPTION The THM72V1635ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5164405AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		THM72V1635ATG-4 216-WORD 72-BIT THM72V1635ATG TC5164405AFT 40-ns TC516540 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56SW872ESN Series, HB56SW864ESN Series 64 MB Unbuffered EDO DRAM DIMM 8-Mword X 72/64-bit, 4 k Refresh, 2-Bank Module 36/32 pcs of 4 M X 4 Components HITACHI ADE-203-761C (Z) Rev. 3.0 Nov. 1997 Description The HB56SW872ESN, HB56SW864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family,


    OCR Scan     		HB56SW872ESN HB56SW864ESN 72/64-bit, ADE-203-761C HB56SW872ESN, 16-Mbit HM51W16405) 24C02) Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GMM7374200BNS/SG is a 4M x 36 bits Dynamic RAM MODULE w hich is assembled 9 pieces of 4M x 4bit DRAMs in 24 26 pin SOJ package on the printed circuit board w ith decoupling capacitors. The GM M 7374200BNS/SG is optim ized for


    OCR Scan     		GMM7374200BNS/SG 7374200BNS/SG GMM7374200BNS/SG GMM7374200BNS GMM7374200BNSG 111111111111111111ii PDF

    RCA 2116

    Abstract: No abstract text available
    Text: NOW / GE/RCA Products PART OF THE ^NEW H A R R IS S E M IC O N D U C T O R h a r r i^ 1 18 A 1 - 2 t 7 - A 6 < o o A O - CMM5104/3, CMM 5104/3Z High-Reliability, Radiation-Hardened CMOS/SOS 4096-Word by 1-Bit LSI Static RAM T 2J A2 - 3


    OCR Scan     		CMM5104/3, 5104/3Z 4096-Word RCA 2116 PDF

    Untitled

    Abstract: No abstract text available
    Text: X NEC Electronics Inc. pPD42116x = 420, 820, 920, 162, 182 16-Megablt Synchronous Dynamic CMOS RAM Advance Information Description The juPD42116x is a synchronous DRAM (SDRAM) using a single 3.3-volt power supply and with all input signals synchronized to an external clock. Commands are


    OCR Scan     		uPD42116x pPD42116420 PD42116820 /PD42116920 /JPD42116162 /JPD42116182 pPD42116x 16-Megablt juPD42116x PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification


    OCR Scan     		KMM332F400CS-L KMM332F41OCS-L KMM332F410CS-L KMM332F40 4Mx32bits KMM332F400CS-L5/L6 24-pinTSOPII 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA727LF is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M


    OCR Scan     		MC-458CA727 72-BIT MC-458CA727LF uPD4564841 C-458CA727EFA uPD45128163 M14278EJ2V0DS00 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332F204AT-L KMM332F224AT KMM332F204AT-L KMM332F224AT-L 2Mx32 KMM332F20 1Mx16bit 44-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SMJ416100 16777216-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS045C - NOVEMBER 1992 - REVISED JUNE 1995 Organization . . . 16777216 x 1 Bits Single 5-V Power Supply 10% Tolerance Performance Ranges: '416100-70 •416100-80 '416100-10 ACCESS TIME ACCESS


    OCR Scan     		SMJ416100 16777216-BIT SGMS045C SOMS045C PDF

    TMS2732A

    Abstract: tms2732 10MILLISECOND eprom tms2732A TMS2732A-45
    Text: TMS2732A 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY A U G U ST 1 9 8 3 —R EV ISED FEB R U A R Y 198 8 Organization . . . 4096 x 8 J PACKAGE TOP VIEW Single 5-V Power Supply • All Inputs/Outputs Fully TTL Compatible • Max Access/Min TM S2732A-17


    OCR Scan     		TMS2732A 768-BIT TMS2732A-17 TMS2732A-20 TMS2732A-25 TMS2732A-45 TMS2732A-. TMS2732A tms2732 10MILLISECOND eprom tms2732A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R TECH N ICA L DATA MCM62973A Product Preview 4K x 12 Bit Synchronous Static RAM with Output Registers The MCM62973A ¡8 a 49,152 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance


    OCR Scan     		MCM62973A 62973AFN18 2973A 62973AFN20 MCM62973A PDF

    R7F7

    Abstract: No abstract text available
    Text: Preliminary H M 5216165 S e r ie s 524,2SS-word x 16-blt x 2-bank Syn ch ro n o u s D ynam ic R A M HITACHI All inpuls and outputs are referred to the rising e d g e o f th e c lo c k in p u t. T h e H M 5 2 1 6 1 6 5 is offered in 2 banks for improved performance.


    OCR Scan     		16-blt HM5216165TT-10 HM5216165TT-12 HM5216165TT-15 400-mil 50-pin TTP-50D) HM5216165 073-Vm R7F7 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-10168-4E MEMORY ill lilllllllllllllllllllllllllllllllll 1M X 1 6 BITS CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory


    OCR Scan     		DS05-10168-4E MB81V16160A 16-bit 256-bits F9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F400BS-L KMM332F410BS-L DRAM MODULE KMM332F400BS-L & KMM332F410BS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0BS is a 4Mx32bits Dynamic Part Identification


    OCR Scan     		KMM332F400BS-L KMM332F410BS-L KMM332F400BS-L KMM332F410BS-L KMM332F40 4Mx32bits 24-pinTSOPII 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M332V804AS/AZ-L KMM332V804AS/AZ-L Fast Page Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V804A


    OCR Scan     		M332V804AS/AZ-L KMM332V804AS/AZ-L 4MX16, KMM332V804A 8Mx32bits 4Mx16bits 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    OCR Scan     		KM44V16004B, KM44V16104B 16Mx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L Fast Page Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M bit x 32 Dynam ic RAM high density m em ory module. The


    OCR Scan     		KMM332V204BT-L KMM332V224BT-L KMM332V204BT-L KMM332V224BT-L 2Mx32 KMM332V204BT-L6/L7 cycles/128ms 60/70ns) KMM332V224BT-L6/L7 PDF

    KM44C4104bk

    Abstract: No abstract text available
    Text: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		8Mx32 KMM53280 24-pin 72-pin KMM5328004B KMM5328104BK/BKG KMM5328004BK/BKG KMM5328104BK/BKG KM44C4104bk PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416U Q 1004CT(E)-L CMOS DRAM Low Power 1Mx 16Bit CMOS Dynamic RAM with EDO DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs with low operating & self refresh voltage. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+3.0W


    OCR Scan     		KM416U 1004CT 16Bit 1Mx16 KM416U1004CT PDF

    TE92

    Abstract: YTE73
    Text: HYM71V8655HCT6 8Mx64, 8Mx16 based, PC100 D E S C R IP T IO N The Hynix HYM71V8655HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    OCR Scan     		HYM71V8655HCT6 8Mx64, 8Mx16 PC100 HYM71V8655HCT6 8Mx64bits 8Mx16bits 400mil 54pin 168pin TE92 YTE73 PDF