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    AO88 Search Results

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    AO88 Price and Stock

    Alpha & Omega Semiconductor AO8814

    MOSFET 2N-CH 20V 8TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO8814 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.25647
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    Quest Components AO8814 68
    • 1 $0.877
    • 10 $0.7016
    • 100 $0.5262
    • 1000 $0.5262
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    TME AO8814 1
    • 1 $0.98
    • 10 $0.461
    • 100 $0.336
    • 1000 $0.309
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    SRA Soldering Products AO888A

    888A 2 IN 1 DIGITAL HOT AIR REWO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO888A Box 105 1
    • 1 $109.99
    • 10 $109.99
    • 100 $109.99
    • 1000 $109.99
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    SRA Soldering Products AO883

    883 LARGE IR PREHEATING STATION
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO883 Box 23 1
    • 1 $567.16
    • 10 $567.16
    • 100 $567.16
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    SRA Soldering Products AO888A220V

    888A 2 IN 1 DIGITAL HOT AIR REWO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO888A220V Box 22 1
    • 1 $129.99
    • 10 $129.99
    • 100 $129.99
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    SRA Soldering Products AO8800

    8800 SELF CONTAINED DESOLDERING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO8800 Box 12 1
    • 1 $174.99
    • 10 $174.99
    • 100 $174.99
    • 1000 $174.99
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    Find more AO88 price and stock on Findchips.com

    AO88 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO8800 Alpha Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8801 Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8801A Alpha & Omega Semiconductor Load Switch - 20V P-Channel MOSFET Original PDF
    AO8801A_001 Alpha & Omega Semiconductor MOSFET 2P-CH 8TSSOP Original PDF
    AO8801AL Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 4.5A 8TSSOP Original PDF
    AO8801L Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8802 Unknown Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8803 Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8803L Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8804 Alpha & Omega Semiconductor Battery Protection - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8804 Unknown Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8804_100 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V Original PDF
    AO8804L Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V Original PDF
    AO8806 Unknown Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8807 Alpha & Omega Semiconductor Load Switch - Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8807L Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 8TSSOP Original PDF
    AO8808 Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8808A Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8808AL Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8808L Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO88 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AO8820

    Abstract: ao88
    Text: AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use


    Original     		AO8820 AO8820 ao88 PDF

    7A TSSOP8

    Abstract: AO8824 AO88
    Text: AO8824 20V N-Channel MOSFET General Description Product Summary The AO8824 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional


    Original     		AO8824 AO8824 othe00 7A TSSOP8 AO88 PDF

    AO8801

    Abstract: No abstract text available
    Text: AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO8801 AO8801 PDF

    AO8822

    Abstract: No abstract text available
    Text: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8822 AO8822L PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		AO8820 AO8820/L AO8820L -AO8820L PDF

    AO8814

    Abstract: No abstract text available
    Text: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8814 AO8814is AO8814L PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 1: Nov 2004 AO8808A, AO8808AL Green Product Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while


    Original     		AO8808A, AO8808AL AO8808A PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		AO8820 AO8820 AO8820L PDF

    AO8832

    Abstract: No abstract text available
    Text: AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		AO8832 AO8832 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8822 AO8822 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		AO8803 AO8803 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 1: Nov 2004 AO8801, AO8801L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This


    Original     		AO8801, AO8801L AO8801 PDF

    AO8816

    Abstract: No abstract text available
    Text: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO8816 AO8816 PDF

    AO8807L

    Abstract: No abstract text available
    Text: AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original     		AO8807L AO8807L PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8818 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		AO8818 AO8818 PDF

    AO8814

    Abstract: AO8814L
    Text: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8814 AO8814 AO8814is AO8814L PDF

    AO8830

    Abstract: No abstract text available
    Text: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8830 AO8830/L AO8830 AO8830L -AO8830L PDF

    AO8820

    Abstract: No abstract text available
    Text: AO8820 20V N-Channel MOSFET General Description Product Summary The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional


    Original     		AO8820 AO8820 othe00 PDF

    AO8806

    Abstract: No abstract text available
    Text: AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		AO8806 AO8806 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8822 AO8822 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 2: Nov 2004 AO8803, AO8803L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This


    Original     		AO8803, AO8803L( AO8803 AO8803L AO8803L PDF

    AO8801A

    Abstract: No abstract text available
    Text: AO8801A 20V P-Channel MOSFET General Description Product Summary The AO8801A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO8801A AO8801A PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 1: August 2004 AO8814, AO8814L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while


    Original     		AO8814, AO8814L AO8814 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		AO8810 AO8810 AO8810L PDF