AO8830
Abstract: No abstract text available
Text: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable
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AO8830
AO8830/L
AO8830
AO8830L
-AO8830L
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AO8830
Abstract: 5a diode
Text: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.
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Original
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AO8830
AO8830
AO8830L
5a diode
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PDF
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AO8830
Abstract: No abstract text available
Text: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable
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Original
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AO8830
AO8830/L
AO8830
AO8830L
-AO8830L
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PDF
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Untitled
Abstract: No abstract text available
Text: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable
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Original
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AO8830
AO8830/L
AO8830
AO8830L
-AO8830L
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PDF
|
Untitled
Abstract: No abstract text available
Text: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable
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Original
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AO8830
AO8830/L
AO8830
AO8830L
-AO8830L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.
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Original
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AO8830
AO8830
AO8830L
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PDF
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