AO4801A Search Results

AO4801AL

Abstract: 933 SOIC8
Contextual Info: AO4801AL 30V P-Channel MOSFET General Description Product Summary The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.

AO4801A

Contextual Info: AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.

AO4801A

Contextual Info: AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

Contextual Info: Dual P-channel MOSFET ELM14801AB-N •General description ■Features ELM14801AB-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

Contextual Info: デュアルパワー P チャンネル MOSFET ELM14801AB-N •概要 ■特長 ELM14801AB-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=-5A Vgs=-10V MOSFET です。

ELM14801AB

Contextual Info: 双 P 沟道 MOSFET ELM14801AB-N •概要 ■特点 ELM14801AB-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-5A Vgs=-10V ·Rds(on) < 48mΩ (Vgs=-10V) ·Rds(on) < 57mΩ (Vgs=-4.5V)

Contextual Info: Dual P-channel MOSFET ELM54801AA-N •General description ■Features ELM54801AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)